BAV170
Abstract: No abstract text available
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 ! , , Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
BAV170
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BAV170
Abstract: No abstract text available
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
BAV170
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BAV170
Abstract: No abstract text available
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
poweV170
EHB00081
Mar-10-2004
BAV170
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Untitled
Abstract: No abstract text available
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
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bav170
Abstract: MarKING Jxs sot23
Text: BAV170. Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BAV170.
BAV170
EHB00081
EHB00082
Jul-09-2003
bav170
MarKING Jxs sot23
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BAV170
Abstract: No abstract text available
Text: BAV170 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol
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BAV170
VPS05161
EHA07004
EHB00081
Aug-20-2001
EHB00082
BAV170
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BAV170
Abstract: Marking code jxs Q62702-A920 MarKING Jxs sot23 JXs sot JXs SOT23
Text: Silicon Low Leakage Diode Array BAV 170 Low leakage applications ● Medium speed switching times ● Common cathode ● Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol
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Q62702-A920
OT-23
BAV170
Marking code jxs
Q62702-A920
MarKING Jxs sot23
JXs sot
JXs SOT23
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JXs sot
Abstract: BAV170 MarKING Jxs sot23
Text: BAV 170 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 170 JXs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter
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VPS05161
EHA07004
OT-23
EHB00081
EHB00082
Oct-08-1999
EHB00083
JXs sot
BAV170
MarKING Jxs sot23
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BAV170
Abstract: BCW66
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAV170 ! , , Type Package Configuration Marking BAV170 SOT23 common cathode
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BAV170.
BAV170
BAV170
BCW66
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SMD MARKING CODE JYP
Abstract: JYP SOT23 Marking Code SMD za BAV199 MARKING A53 diode smd A53 SMD
Text: Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 • Switching time: typ. 0.8 jxs 2 cathode • Continuous reverse voltage: 3 anode; cathode
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BAV199
010113D
SMD MARKING CODE JYP
JYP SOT23
Marking Code SMD za
BAV199
MARKING A53 diode smd
A53 SMD
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sst310
Abstract: SST309 PART MARKING Z08 MARKING marking z08 Z08 SOT 5
Text: fTT*Siliconix SST308 SERIES N-Channel JFETs Jm W incorporated The SST308 Series is the surface mount equivalent of our popular J308 Series. It features high-gain > 8000 jxS , low noise (typically < 6nWHz) and low gate leakage (typically < 2 pA). Of special interest,
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SST308
SST309
SST310
OT-23
sst310
SST309 PART MARKING
Z08 MARKING
marking z08
Z08 SOT 5
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 » SOT-23 E * J Kl ° EHA0700*
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Q62702-A920
OT-23
a535bos
fl235b05
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A07004
Abstract: JXs sot
Text: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 « SOT-23 EH I M ° EH A07004
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Q62702-A920
OT-23
A07004
A07004
JXs sot
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marking CAR 5-pin
Abstract: JXs sot lm7221 D381 dip 6
Text: September 1995 Semiconductor & LMC7221 Tiny CMOS Comparator with Rail-To-Rail Input and Open Drain Output General Description Features The LM7221 is a micropower CMOS comparator available in the space saving SOT23-5 package. This makes this comparator ideal for space and weight critical designs. The
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LMC7221
LM7221
OT23-5
marking CAR 5-pin
JXs sot
D381 dip 6
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leader 400 charger
Abstract: lm7221 LM722 c01a LMC7211 LMC7221 LMC7221AIN LMC7221BIM LMC7221BIN M08A
Text: September 1995 Semiconductor ß LMC7221 Tiny CMOS Comparator with Rail-To-Rail Input and Open Drain Output General Description Features The LM7221 is a micropower CMOS comparator available in the space saving SOT23-5 package. This makes this comparator Ideal for space and weight critical designs. The
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LMC7221
LM7221
OT23-5
LMC7221
LMC7211
0541S-000
leader 400 charger
LM722
c01a
LMC7221AIN
LMC7221BIM
LMC7221BIN
M08A
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JXs sot
Abstract: No abstract text available
Text: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) ♦ Top View .016 (0.4) These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS40
BAS40-06
OT-23
OT-23
BAS40-04
BAS40
BAS40-05
JXs sot
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Untitled
Abstract: No abstract text available
Text: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) .016 (0.4) These diodes feature very low turn-on voltage and fast switching. Top View These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis
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BAT54
BAT54S
OT-23
BAT54
BAT54A
OT-23
BAT54C
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bc849
Abstract: No abstract text available
Text: BC846 THRU BC849 Small Signal Transistors NPN FEATURES SOT-23 •122 (3.1) .118 (3.0) 016 (0.4) ♦ NPN Silicon Epitaxial Planar Transistors fo r switching and AF am plifier applications. ♦ Especially suited fo r autom atic insertion in th ick- and thin-film circuits.
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BC846
BC849
OT-23
BC847
BC848
BC849
BC856.
BC859
BC846.
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Dale R018
Abstract: RC5201 IHSM 7832 intelligent battery charger circuit diagram REGULATOR IC 7832 SSOP24 TSSOP24 Advanced Smart Battery Pack Controller RC5201G WSL2512R018
Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC5201 Chemistry Independent Intelligent Battery Charger Features Applications • Notebooks’ fast chargers • PDAs • Hand-held portable instruments Description An innovative power control loop allows operation from line
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RC5201
DS30005201
Dale R018
RC5201
IHSM 7832
intelligent battery charger circuit diagram
REGULATOR IC 7832
SSOP24
TSSOP24
Advanced Smart Battery Pack Controller
RC5201G
WSL2512R018
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Untitled
Abstract: No abstract text available
Text: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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bcs57
BC858
BC857
BC847
OT-23
BC857/BC858
OT-23
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Untitled
Abstract: No abstract text available
Text: Central’ CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load
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CMPD5001
CMPD5001S
CMPD5001
OT-23
100mA
200mA
400mA
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MarKING Jxs sot23
Abstract: A82/MARKING MARKING D53 C2 marking code marking code C1 marking code c2 marking code LA CMPD2003 CMPD2004 CMPD2004S
Text: Central" CMPD2003 CMPD2004 CMPD2004S Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SE M IC O N D U C TO R CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for
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CMPD2003
CMPD2004
CMPD2004S
OT-23
CMPD2003,
CMPD2004,
CMPD2004S
MarKING Jxs sot23
A82/MARKING
MARKING D53
C2 marking code
marking code C1
marking code c2
marking code LA
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MMBT200
Abstract: pn200
Text: PN200/MMBT200 E J l National J u t Semiconductor PN200 MMBT200 UjT /M/ /#/ M TO-236 SOT-23 TO-92 ED U ' TL/G/10100-5 *C . TL/G/10100-1 P N P G e n e r a l P u r p o s e A m p lif ie r E le c tric a l C h a r a c t e r is t ic s ta = 25°c unless otherwise noted
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PN200/MMBT200
PN200
MMBT200
OT-23)
MMBT200
pn200
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Untitled
Abstract: No abstract text available
Text: BAV70 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching dual diode with common cathode ♦ This diode is also available in other configurations including: a dual anode to cathode with type designation BAV99, a dual common anode
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BAV70
OT-23
BAV99,
BAW56,
BAL99.
OT-23
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