Untitled
Abstract: No abstract text available
Text: HN58V65AI Series HN58V66AI Series HN58V65A-SR Series HN58V66A-SR Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-759A Z Rev. 1.0 Aug. 29, 1997 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable
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HN58V65AI
HN58V66AI
HN58V65A-SR
HN58V66A-SR
8192-word
ADE-203-759A
HN58V65A
HN58V66A
64-byte
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Untitled
Abstract: No abstract text available
Text: HB56UW1672E Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-683B Z Rev. 2.0 Jun. 16, 1997 Description The HB56UW1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The
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HB56UW1672E
16777216-word
72-bit
ADE-203-683B
64-Mbit
HM5164405ATT)
16-bit
74LVT16244)
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Untitled
Abstract: No abstract text available
Text: HM5216326 Series 262,144-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-678 Z Preliminary Rev. 0.1 Jun. 9, 1997 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided
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HM5216326
144-word
32-bit
ADE-203-678
Hz/100
Hz/83
JVCV1S1U11
FP-100H
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Untitled
Abstract: No abstract text available
Text: HN62435 Series 262144-word x 16-bit/524288-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-472B Z Rev. 2.0 Jun. 11, 1997 Description The Hitachi HN62435 series is a 4-Mbit CMOS mask programmable ROM organized either as 262144word x 16-bit or as 524288-word x 8-bit. As it has realized high speed access 120 ns, it is the most suitable
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HN62435
262144-word
16-bit/524288-word
ADE-203-472B
262144word
16-bit
524288-word
40-pin
40-pin
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Untitled
Abstract: No abstract text available
Text: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed staticRAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
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HM62W1400H
ADE-203-773E
400-mil
32-pin
400-mil
HM62W
1400H-10
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Untitled
Abstract: No abstract text available
Text: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs o f 2 M x 8 Components HITACHI ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
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HB526C272EN-10IN,
HB526C472EN-10IN
72-bit,
ADE-203-693D
HB526C272EN,
HB526C472EN
HB526C272EN
16-Mbit
HM5216805TT)
24C02)
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Untitled
Abstract: No abstract text available
Text: HM5164160 Series HM5165160 Series 64 M FP DRAM 4-Mword x 16-bit 8 k Refresh/4 k Refresh HITACHI ADE-203-810B (Z) Rev. 1.0 Mar. 18, 1998 Description The Hitachi HM5164160 Series, HM5165160 Series are 64M-bit dynamic RAMs organized as 4,194,304word x 16-bit. They have realized high performance and low power by employing CMOS process
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HM5164160
HM5165160
16-bit)
ADE-203-810B
64M-bit
304-word
16-bit.
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