0829A
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jUPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ,uPD444004 is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The ,uPD444004 is packaged in a 32-pin plastic SOJ and 32-pin plastic TSOP (II).
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jUPD444004
uPD444004
32-pin
PD444004LE-10
PD444004LE-12
0829A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT juPD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD444004L is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
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juPD444004L
PD444004L
32-pin
PD444004LLE-A10
PD444004LLE-A1onal
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