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    0829A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jUPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ,uPD444004 is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The ,uPD444004 is packaged in a 32-pin plastic SOJ and 32-pin plastic TSOP (II).


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    PDF jUPD444004 uPD444004 32-pin PD444004LE-10 PD444004LE-12 0829A

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    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD444004L is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


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    PDF juPD444004L PD444004L 32-pin PD444004LLE-A10 PD444004LLE-A1onal