HXNV01600
Abstract: No abstract text available
Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ PRODUCTION - Release Review - -17 28Jun Jun2014 201414:05:31 03:55:11MST MST- -Printed Printedon on26 18Jun Jul 2014 ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness
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HXNV01600
1x106
1x1010
1x1012
1x10-10
1x1014
ADS-14229
HXNV01600
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BMP180 - Bosch Sensortec
Abstract: SiRFstarIV GSD4e
Text: AM3517/05 SAU-Module www.sauris.de Revision 1.20 JUN2012 AM3517/05 SAU-Module General Features • Texas Instruments Sitara Microprocessor AM3517/05 o 600 MHz Sitara ARM Cortex-A8 Core o NEON SIMD Coprocessor AM3517 only o 64K SRAM o MMC/SD/SDIO Interface
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AM3517/05
JUN2012
AM3517
TPS650732
Cha74
BMP180 - Bosch Sensortec
SiRFstarIV GSD4e
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BD5 diode
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
L02ESD5V0D6-5
OT363
OT363
100mV
BD5 diode
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Untitled
Abstract: No abstract text available
Text: SBL2040CTW thru 2045CTW SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 40 to 45 Volts FORWARD CURRENT – 20 Amperes FEATURES TO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency
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SBL2040CTW
2045CTW
O-220AB
300us,
L42xH25xW25mm
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Untitled
Abstract: No abstract text available
Text: SD1A220G High Voltage Silicon Bidirectional Thyristors 1 AMPERE RMS 220 VOLTS FEATURES •VDRM & VRRM with stand +/- 210V. •Compact package for spacing saving. Application • Gas Igniters • HID Igniters • Pulse generating MAXIMUM RATINGS Tj=25 ℃, unless otherwise specified
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SD1A220G
Jun-2010,
KDXD03
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Untitled
Abstract: No abstract text available
Text: MMDT5401 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMDT 5551 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)
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MMDT5401
OT-363
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: LTTH806SDF HYPER-FAST GLASS PASSIVATED RECTIFIER REVERSE VOLTAGE – 600Volts FORWARD CURRENT – 8.0 Ampere FEATURES ITO-220AC • Soft, Hyper fast switching capability • Specially suited for critical mode Power Factor Corrections. • High reliability and efficiency
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LTTH806SDF
600Volts
ITO-220AC
J-STD-020C
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR KBJ404G thru KBJ410G REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 4.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES KBJ Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic
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KBJ404G
KBJ410G
E95060
16ecifications
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Untitled
Abstract: No abstract text available
Text: BC807W PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • Epitaxial planar die construction • Complementary to BC817W MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI
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BC807W
BC817W
OT-323
2002/95/EC
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ci lsc
Abstract: No abstract text available
Text: BAT54WS SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOD-323 • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection SOD-323 MECHANICAL DATA • Case: SOD-323 Plastic
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BAT54WS
OD-323
OD-323
J-STD-020D
2002/95/EC
ci lsc
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MBR10100CTW
Abstract: No abstract text available
Text: MBR10100CTW SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 10 Amperes TO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR10100CTW
O-220AB
O-220AB
MIL-STD-202
MBR10100CTW
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Untitled
Abstract: No abstract text available
Text: MBR30100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 30 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR30100CE
O-262AA
MIL-STD-202
300us,
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Untitled
Abstract: No abstract text available
Text: MMBT589 PNP General Purpose Transistor FEATURES • High current surface mount PNP silicon switching transistor for load management in portable applications MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI
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MMBT589
OT-23
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: MMBT4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMBT4401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)
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MMBT4403
MMBT4401)
OT-23
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: BC846W NPN General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI
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BC846W
OT-323
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR ESD PROTECTION DEVICE L14ESDXXVP2 STAND-OFF VOLTAGE – 12 ~24 Volts POWER DISSIPATION – 140 WATTS GENERAL DESCRIPTION SOD-923 The L14ESDXXVP2 Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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L14ESDXXVP2
L14ESDXXVP2
OD-923
OD-923
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Untitled
Abstract: No abstract text available
Text: MBR20100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR20100CE
O-262AA
MIL-STD-202
300us,
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Untitled
Abstract: No abstract text available
Text: BC847T NPN General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-523 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI
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BC847T
OT-523
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: KBP204GL~KBP210GL GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE – 400 to 1000 Volts FORWARD CURRENT – 4.0 Ampere FEATURES KBP • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic KBP
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KBP204GL
KBP210GL
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated
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400mA
M54583WP
400mA)
M54583
Jul-2011
Jun-2011
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Untitled
Abstract: No abstract text available
Text: TT206 thru TT210 GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE – 600 to 1000 Volts FORWARD CURRENT – 2.0 Ampere FEATURES TT • Case Material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Rating to 1000V PRV
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TT206
TT210
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SST2603
Abstract: No abstract text available
Text: SST2603 -5A, -20V,RDS ON 65mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 1.90REF 0.95REF The SST2603 utilized advanced processing techniques to achieve the lowest 0.95REF 1.2 REF possible on-resistance, extremely efficient and cost-effectiveness device.
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SST2603
OT-26
90REF
95REF
SST2603
15-Jun-2010
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SBF2060CT
Abstract: 2060CT
Text: SBF2050CT thru 2060CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 20 Amperes FEATURES ITO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency
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SBF2050CT
2060CT
ITO-220AB
ITO-220AB
L42xH25xW25mm
SBF2060CT
2060CT
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Untitled
Abstract: No abstract text available
Text: ES5G SURFACE MOUNT SUPER FAST RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT – 400 Volts – 5.0 Amperes FEATURES • Glass passivated chip SMC • Super fast switching for high efficiency • For surface mounted applications • Low forward voltage drop and high current capability
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