Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JUN15 Search Results

    JUN15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zs transistor

    Abstract: BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS460L6 BFR460L3) Jun-15-2004 zs transistor BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl

    28c10

    Abstract: No abstract text available
    Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion


    Original
    PDF BAT60B. BAT60B OD323 28c10

    Untitled

    Abstract: No abstract text available
    Text: BAT60A. Silicon Schottky Diode • High current rectifier Schottky diode with extreme low VF drop typ. 0.12V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion


    Original
    PDF BAT60A. BAT60A OD323 100ms Jun-15-2004

    Untitled

    Abstract: No abstract text available
    Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion


    Original
    PDF BAT60B. BAT60B OD323

    BAT60B

    Abstract: No abstract text available
    Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion


    Original
    PDF BAT60B. BAT60B OD323 100ms Jun-15-2004 BAT60B

    Maxim date code

    Abstract: MAX810JEUR maxim cross reference sot 23 mark 06 Direct Replacement MAX809 CROSS MAX809teur MAX803REUR MAX803MEUR Cross Reference sot23
    Text: Solved by Design Solution # 23 TM Sipex replacement for MAX803/809/810 3 pin Microprocessor Reset Circuits Date: June 01, 2006 Designed by: Mark Boermeester mboermeester@sipex.com Part Number: SP809, SP809N and SP810 Application Description: Replace MAX803/809/810 with Sipex solution


    Original
    PDF MAX803/809/810 SP809, SP809N SP810 SP810 MAX803, MAX809 Maxim date code MAX810JEUR maxim cross reference sot 23 mark 06 Direct Replacement MAX809 CROSS MAX809teur MAX803REUR MAX803MEUR Cross Reference sot23

    Untitled

    Abstract: No abstract text available
    Text: A B C D E G F H REVISIONS 2.0 0.079 1 REV DESCRIPTION, ECN, EAR NO. DATE A PRODUCT DRAWING JUN20/12 S.M B UPDATED TOLERANCES JUN21/12 S.M C ADDED MOUNTING FEATURE SEP10/12 S.M APP'D 1 9.63 0.379 19.77 0.778 4X 2 3.40 0.134 15.32 0.603 12.00 0.472 4.00 0.157


    Original
    PDF JUN20/12 JUN21/12 SEP10/12 937RENCE P-DWR-L1P-C1000-1G5

    Untitled

    Abstract: No abstract text available
    Text: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE A PRODUCT DRAWING JUN20/12 APP'D S.M B UPDATED TOLERANCES JUN21/12 S.M C ADDED THUMB SCREW MOUNTING SEP10/12 S.M 1 1 THUMB SCREWS 2 PIECES PER CONNECTOR SEE NOTE 4 GRID HOLDER COOLBAND GRID 19.77


    Original
    PDF JUN20/12 JUN21/12 SEP10/12 P-DWR-L1S-C1000-1G5

    Untitled

    Abstract: No abstract text available
    Text: BAT60A. Silicon Schottky Diode • High current rectifier Schottky diode with extreme low VF drop typ. 0.12V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion


    Original
    PDF BAT60A. BAT60A OD323

    BAT60A

    Abstract: No abstract text available
    Text: BAT60A. Silicon Schottky Diode • High current rectifier Schottky diode with extreme low VF drop typ. 0.12V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion


    Original
    PDF BAT60A. BAT60A OD323 BAT60A

    ze 003

    Abstract: LZE12W
    Text: SUNLED CORPORATION _ _ - _ , . _ _ 20793 E. VALLEY BLVD. #C S U^ LED WALNUT.CA.91789, U.S.A. E-MAIL : sales@sunled.com URL ADDRESS : http://www.sunled.com LZE12W 27 1.063 MIN. 8.6(.339) <|)5.9(.232) NOTES: 1JJI dimensions am In mHlimeters(lnches) 2.Toierance Is ± 0.25mm(0.0V)unless otherwise noted.


    OCR Scan
    PDF LZE12W LZE12W JUN15 ze 003

    KL6448USTS-FW

    Abstract: Kyocera lcd kl6448usts I2121 640X480 32PK kyocera 45 mp d kyocera 45 mp y
    Text: Received: 6 / IS/95; 1 :32Py; JUM -15-195G 300 13 = FROM 695 9804 => EARTH COMPUTER ; #1 KYOCERfi t'ftMCOLUER TO I94'j3bi2i2i p .eei % a i4 r ' brand fax trartsmittal memo 7571 | # ef pages ¡s^ / / A/ ICOtPSp; ? £ yi/ „ Pp. fs LlyA< J.Ijj >>•/ vj v


    OCR Scan
    PDF JUM-15-1993 194J3S12121 KL6448USTS S7UWF0TG0C07 1949Z KL6448USTS-FW Kyocera lcd kl6448usts I2121 640X480 32PK kyocera 45 mp d kyocera 45 mp y

    Untitled

    Abstract: No abstract text available
    Text: A Q Û rv n n v O ' * — C N I ' D L O C O I'''O O C D O ''— C N I'O '^ -LO t— «— 1— <— <— t— «— CMCNCNCNCNCM -cNro^-mcoi^ooo^ f BBBBBBBBBBBBBBBBBBBBBBBBB e BBBBBBBBBBBBBBBBBBBBBBBBB d BBBBBBBBBBBBBBBBBBBBBBBBB c BBBBBBBBBBBBBBBBBBBBBBBBR b


    OCR Scan
    PDF 76MmMlN. 25/umMlN. Jun15. NCB-125SMPG1 -125SMP6-f NCB00093

    Untitled

    Abstract: No abstract text available
    Text: ^ _ 5_ I_ 5_ I_ £_ I_ o 16 .7 [.6 5 7 ] 16.00 [.6 3 0 ] 3.18 [.1 2 5 ] 16 .3 5 [.6 4 4 ] [O -TIN DIPPED ZONE 1 □ : F 6.78 [.2 6 7 ] _ i 3.18 [.1 2 5 ] 3.94 [.1 5 5 ] TOLERANCES: + / - 0.05[.002],


    OCR Scan
    PDF SEP29/12 RJE74