Untitled
Abstract: No abstract text available
Text: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD A - NEW PER EAR 13254 - JUN09/08 - K.L. . 0.40 0.05 [.016 .002] X 2.00 0.10 [.079 .004] GROUND TAILS 2 PLCS . 0.40 0.05 [.016 .002] X 0.25 0.03 [.010 .001] CONTACT TAILS (5 PLCS) F 2.25±0.30 .089±.012 12.2
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JUN09/08
2002/95/EC
JUN09/08
P-MUSB-B551-041
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BDFB
Abstract: ED83368-30 402328926 407998244 ED8336830 bullet breaker panel CC848808551 CC408617410 CC109145463 407998160
Text: Micro-BDFB and DC Distribution Panel Ordering Guide – Model: ED83368-30 Measuring just 7 inches 4U tall, these versatile 19” and 23” rack or wall mounted panels can be configured as simple dc distribution panels or as micro-bdfb’s* providing monitored secondary
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ED83368-30
24Vdc
-48Vdc
CC408617410
TFD-101-011-09
TFD-101-011-10
CC109103157
Jun09
BDFB
ED83368-30
402328926
407998244
ED8336830
bullet breaker panel
CC848808551
CC408617410
CC109145463
407998160
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2603L
Abstract: SE2603L SIGE2603L
Text: SE2603L 2.4 GHz High Efficiency Wireless LAN Front End Preliminary Applications Product Description • • The SE2603L is a complete 802.11bgn WLAN RF front-end module providing all the functionality of the power amplifier, power detector, diversity switch and
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SE2603L
IEEE802
SE2603L
11bgn
DST-00334
Jun-09-2010
2603L
SIGE2603L
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SEM 2006
Abstract: P1308ATG transistor sem 2006
Text: P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P1308ATG
O-220
Jun-09-2006
SEM 2006
P1308ATG
transistor sem 2006
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ansoft software
Abstract: IPC-9501 ISM2400 ISM900 Q62702-G0080 smd marking code vd SCT595 D2 DIN 6784
Text: GaAs MMIC CGY 196 Data Sheet • • • • • • • • • Multiband Power Amplifier [800 … 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL Single Voltage Supply Operating voltage range: 2 V to 6 V Pout = 25.5 dBm at Vd = 2.4 V Pout = 26.0 dBm at Vd = 3.0 V
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ISM900,
ISM2400,
SCT-598
Q62702-G0080
IPC-9501
IPC-4202)
GPW09182
ansoft software
IPC-9501
ISM2400
ISM900
Q62702-G0080
smd marking code vd
SCT595
D2 DIN 6784
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Untitled
Abstract: No abstract text available
Text: AO4492L 30V N-Channel MOSFET General Description Features The AO4492L uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 14A
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AO4492L
AO4492L
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ev 2816
Abstract: ic rom 2816 VPS05605 transistor bfp 520 gummel
Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 Gold metallization for high reliability
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VPS05605
OT-343
50Ohm
45GHz
-j100
Jun-09-2000
ev 2816
ic rom 2816
VPS05605
transistor bfp 520
gummel
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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D-81541
14-077S
Q62702-D1353
Q62702-G172
Q62702-G173
ujt 2646
TRANSISTOR J 5804
label infineon barcode
msc 1697
MSC 1697 IC pin diagram
Rohde und Schwarz Active Antenna HE 011
cd 6283 audio
smd transistor v75
log tx2 0909
IC data book free download
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Untitled
Abstract: No abstract text available
Text: SIEGET 45 BFP 520F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB 2 4 1 For oscillators up to 15 GHz Transition frequency fT = 45 GHz TSFP-4
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Jun-09-2000
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D2 DIN 6784
Abstract: D3 DIN 6784
Text: GaAs MMIC CGY 196 Data Sheet • • Multiband Power Amplifier [800 … 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL • Single Voltage Supply • Operating voltage range: 2 V to 6 V • POUT = 25.5 dBm at VD = 2.4 V • POUT = 26.0 dBm at VD = 3.0 V
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ISM900,
ISM2400,
SCT-598
Q62702-G0080
EHT08766
GPW09182
D2 DIN 6784
D3 DIN 6784
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AO4406AL
Abstract: No abstract text available
Text: AO4406AL 30V N-Channel MOSFET General Description Features The AO4406AL uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V
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AO4406AL
AO4406AL
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D2 DIN 6784
Abstract: SMD MARKING CODE V75 Ansoft rf marking Y2 ISM2400 ISM900 Q62702-G0080 smd marking code vd GPW09182 v75 smd
Text: GaAs MMIC CGY 196 Data Sheet • • Multiband Power Amplifier [800 … 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL • Single Voltage Supply • Operating voltage range: 2 V to 6 V • POUT = 25.5 dBm at VD = 2.4 V • POUT = 26.0 dBm at VD = 3.0 V
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ISM900,
ISM2400,
SCT-598
Q62702-G0080
EHT08766
GPW09182
D2 DIN 6784
SMD MARKING CODE V75
Ansoft
rf marking Y2
ISM2400
ISM900
Q62702-G0080
smd marking code vd
GPW09182
v75 smd
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tcm8210
Abstract: TCM8210MD ALC 655 VGA camera module TCM8210MDA ITU656 RGB565 YUV422 0YUV422 QCIF
Text: TCM8210MD A Ver. 2.07 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8210MD (A) TENTATIVE VGA CAMERA MODULE The TCM8210MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image
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TCM8210MD
TCM8210MD
tcm8210
ALC 655
VGA camera module
TCM8210MDA
ITU656
RGB565
YUV422
0YUV422
QCIF
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BFP-540
Abstract: VPS05605 transistor BO 540 Transistor MJE 540
Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
OT-343
50Ohm
-j100
Jun-09-2000
BFP-540
VPS05605
transistor BO 540
Transistor MJE 540
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Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP 405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 2 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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Jun-09-2000
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Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP 420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.15 dB at 1.8 GHz 2 4 outstanding G ms = 22 dB at 1.8 GHz Transition frequency f T = 25 GHz
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Jun-09-2000
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Untitled
Abstract: No abstract text available
Text: BFP 620F NPN Silicon Germanium RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability
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Jun-09-2000
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IR P116
Abstract: No abstract text available
Text: D im e n s io n s : 0 .50 3. E l e c t r i c a l s o la tio n Max LO ° X '' ~n r m 0 ,0 3 0 0.020 1 0.01 6 0 .0 0 8 0 .0 2 0 TypJ 0 .350 0 .0 5 0 nnnnnnf m co x CM ° O • YYWW ¡ m u t : 0.01 8+0.002 2. S c h e m a t ic : o m CN o IT O m m ro ro O O @ 100KHz 50m V
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XF68066
10CGESTFD
100KHz
P1-16)
1-10MHz(
25MHz
30MHz
40MHz
IR P116
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Untitled
Abstract: No abstract text available
Text: NOTES: MATERIALS AND FINISHES: B O D Y , C O U P L I N G NUT- BRASS, NICK EL PLATING. CONTACT- BRASS, SILVER PLATING. S P R IN G W A S H ER - BeCu, NIC KEL PLATING. INSULATOR- PTFE ELECTRICAL: A. I M P E D A N C E : 5 0 O H M B. D I E L E C T R I C W I T H S T A N D I N G V O L T A G E : 3 0 0 0 V R M S ,
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30-May-1
26-Dec-1
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21A1
Abstract: LMR-240
Text: NOTES: I. MATERIALS AND FINISHES: BODY - BRASS, ALBALOY PLATING C O N T A CT -BRASS, GOLD PLATING INSULATOR - P T F E , NATURAL 2. ELECTRICAL: A. I M P E D A N C E : 50 O H M B. F R E Q U E N C Y R A N G E : DC 0 - I I G H z C. D I E L E C T R I C W I T H S T A N D I N G V O L T A G E :
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\RD-DM0906
\RD-DM09I
Nov-08
25-Ju
02-NOV-09
21-Nov-08
NI121
-AT5GP-8X-50
031121AAA89CP5F
21A1
LMR-240
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MRMS
Abstract: XF4664S
Text: 1. D i m e n s i o n s : .0 0 0 M ax 2 5 .4 0 Max 2. S c h e m a tic : o 16 TO X M IT R AAR AAR A o XFM RS YYWW • XF 4 6 6 4 S 4 HAAHAAHH 0.5 9 0 M a x 0 .5 0 0 T yp 9.90 1? Max 14 RM RCV 0000 0.46 Typ 2 .5 4 0 .700 CABLE 100 OHMS 100 OHMS 0 .018 CABLE 100 OHMS
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XF4664S4
390Max
500Typ
17MHz
10MHz)
5-10MHz)
25MHz:
30MHz:
40MHz:
-100MHz
MRMS
XF4664S
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