Untitled
Abstract: No abstract text available
Text: FUF3A . FUF3M 3.0 Amp. Surface Mount Glass Passivated Ultrafast Recovery Rectifier Current 3.0 A Voltage 50 to 1000 V R DO-214AB SMC FEATURES Low profile package Ideal for automated placement Ultrafast recovery time for high efficiency
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DO-214AB
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
Jul-13
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MMA845x
Abstract: Wearable Heart Rate Monitor FXOS8700CQ MMA955X MPY8600DK6T1
Text: TM August 2013 • Freescale Sensors Overview • Freescale Sensor Portfolio − Linear Inertial Sensors - Accelerometers − Linear Inertial Sensors - Intelligent Sensor Hub − Rotational Inertial & Magnetic Sensors - Gyro & Magnetometers − Pressure Sensors
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800Hz)
MMA845x
Wearable Heart Rate Monitor
FXOS8700CQ
MMA955X
MPY8600DK6T1
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ph74
Abstract: ph71 ph76 ph77 EM78886 EM78808 EM78862C EM78P808 OSCILLATOR 32.768K resistor
Text: EM78862C 8-Bit Microcontroller Product Specification DOC. VERSION 2.1 ELAN MICROELECTRONICS CORP. July 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo
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EM78862C
ePV6300
ph74
ph71
ph76
ph77
EM78886
EM78808
EM78862C
EM78P808
OSCILLATOR 32.768K resistor
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BCR141T
Abstract: SC75
Text: BCR141T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR141T WDs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR141T
VPS05996
EHA07184
Jul-13-2001
BCR141T
SC75
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BCR146W
Abstract: VSO05561
Text: BCR146W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR146W WLs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR146W
VSO05561
EHA07184
OT323
Jul-13-2001
BCR146W
VSO05561
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BCR148T
Abstract: SC75
Text: BCR148T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR148T WEs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR148T
VPS05996
EHA07184
Jul-13-2001
BCR148T
SC75
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BCR133
Abstract: No abstract text available
Text: BCR133 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR133
VPS05161
EHA07184
Jul-13-2001
BCR133
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BAS21 SOD323
Abstract: BAS21-03W
Text: BAS21-03W 2 Silicon Switching Diode 1 For high-speed switching applications High breakdown voltage VPS05176 Type BAS21-03W Marking D Pin Configuration 1=C 2=A Package SOD323 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 200 Peak reverse voltage-
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BAS21-03W
VPS05176
OD323
EHB00028
Jul-13-2001
BAS21 SOD323
BAS21-03W
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BCR146
Abstract: No abstract text available
Text: BCR146 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R2=22k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR146 WLs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR146
VPS05161
EHA07184
Jul-13-2001
BCR146
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Q62702-B0869
Abstract: Q62702-B0873 Diode smd code 72 VES05991 DIODE T25 4 C 25V DIODE SMD T25
Text: BB 565 Silicon Variable Capacitance Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance 2 • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to 1 "in-line" matching assembly procedure
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VES05991
Q62702-B0869
Q62702-B0873
SCD-80
Jul-13-1998
Diode smd code 72
VES05991
DIODE T25 4 C
25V DIODE SMD T25
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BCR142T
Abstract: SC75
Text: BCR142T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR142T
VPS05996
EHA07184
Jul-13-2001
BCR142T
SC75
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Untitled
Abstract: No abstract text available
Text: Power Modules Upgraded flowPIM 0 + PFC for Drive Applications Requiring PFC Vincotech extends product line with state-of-the-art components and extended power range ® flowPIM 0 + PFC 2nd 17 x 66 x 33 mm³ Vincotech has unveiled the latest generation flowPIM® 0 + PFC 2nd
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10-F006PPA006SB-M682B
10-F006PPA010SB-M683B
10-F006PPA015SB-M684B
10-F006PPA020SB-M685B
10-F006PPA020SB01-M685B10
10-F006PPA004SB-M681B
17-mm,
12-mm
Jul-13
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Untitled
Abstract: No abstract text available
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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BCV26,
BCV46
BCV27,
BCV47
VPS05161
BCV26
BCV46
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Untitled
Abstract: No abstract text available
Text: BCR135 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR135 WJs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR135
VPS05161
EHA07184
Jul-13-2001
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BCR142W
Abstract: VSO05561
Text: BCR142W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR142W
VSO05561
EHA07184
OT323
Jul-13-2001
BCR142W
VSO05561
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BCR135W
Abstract: VSO05561
Text: BCR135W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR135W WJs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR135W
VSO05561
EHA07184
OT323
Jul-13-2001
BCR135W
VSO05561
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BCR139
Abstract: No abstract text available
Text: BCR139 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR139 WYs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR139
VPS05161
EHA07264
Jul-13-2001
BCR139
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4.7uH inductor
Abstract: Murata LQH32CN*M11 IR LED infrared led data sheet IR LED infrared led IR LED FOR 38KHZ LQH32CN4R7M11 "Infrared LED" 10uH inductor C3216X5R1C106K pwm 555 driver application
Text: Solved by APPLICATION NOTE ANP30 TM SP6691 Remote Control 100kHz Infrared LED Driver The Infrared IR LED used in a remote control is an application for an LED driver that has specific requirements that may exceed the requirements for a typical LED driver application. For this application, the IR LED driver will run off a 9V
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ANP30
SP6691
100kHz
100kHz,
100Hz.
CA95035
Jul13-07
ANP30:
4.7uH inductor
Murata LQH32CN*M11
IR LED infrared led
data sheet IR LED infrared led
IR LED FOR 38KHZ
LQH32CN4R7M11
"Infrared LED"
10uH inductor
C3216X5R1C106K
pwm 555 driver application
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Untitled
Abstract: No abstract text available
Text: FSSL42 - FSSL44 4.0 Amp. Surface Mount Low VF Schottky Barrier Rectifier Current 4.0 A Voltage 20 V to 40 V DO-214AB SMC FEATURES Low profile package Ideal for automated placement Low power losses, high efficiency High surge current capability
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FSSL42
FSSL44
DO-214AB
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
Jul-13
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BCR148W
Abstract: VSO05561
Text: BCR148W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR148W WEs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR148W
VSO05561
EHA07184
OT323
Jul-13-2001
BCR148W
VSO05561
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BCR141
Abstract: No abstract text available
Text: BCR141 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR141 WDs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR141
VPS05161
EHA07184
Jul-13-2001
BCR141
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BCV26
Abstract: BCV27 BCV46 BCV47
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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BCV26,
BCV46
BCV27,
BCV47
BCV26
VPS05161
EHP00295
BCV26
BCV27
BCV46
BCV47
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Untitled
Abstract: No abstract text available
Text: 1NR5391GP . 1NR5399GP 1.5 Amp. Glass Passivated Junction Rectifier Current 1.5 A at 70º C Voltage 50V to 1000 V DO-204AC DO-15 R FEATURES Glass passivated chip junction Hyperectifier structure for high reliability Cavity-free glass-passivated junction
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1NR5391GP
1NR5399GP
DO-204AC
DO-15)
2011/65/EU
2002/96/EC
MIL-STD-750
J-STD-002
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Untitled
Abstract: No abstract text available
Text: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811(7 LINE) FAX:(07) 821-5815 FOR MESSRS: DATE: JuL13.2007 CUSTOMER’S ACCEPTANCE SPECÏFICATIONS SP14Q006 CONTENTS No. ITEM SHEET No.
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JuL13
SP14Q006
7B64PS
SP14Q006-6
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