ci pc 123
Abstract: amar EP05Q06 DIODE SS-35 ISAO
Text: SCHOTTKY BARRIER DIODE EP05Q06 o . s a /6 0 v FEATURES OJEDEC SOD-123 Package o V ery Low profile 1.1mm M ax o High Surge Capability o Low T herm al Resistance OUL 94, VO o Packaged in 8mm tape Device M arking “ “ ^ Month of Mfg. A =Jan. B = Feb.—L=Dec.
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SA/60V
EP05Q06
OD-123
SO0-123
ci pc 123
amar
EP05Q06
DIODE SS-35
ISAO
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Untitled
Abstract: No abstract text available
Text: PD 9.1608C International IG R Rectifier IR L 3 1 0 3 D 1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged H EX FE T Power M O SFET Vdss= 30V and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application
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1608C
O-220
4AS5455
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"SOT-227 B" dimensions
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFET Power MOSFETs IXFN 26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 p DS on *rr Symbol Test Conditions Maximum Ratings Voss vDGR Tj = 25°C to 150°C Tj = 25CC to 150°C; RGS= 1 M ti
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IXFN26N90
OT-227
E153432
"SOT-227 B" dimensions
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1001RBVFR
Abstract: 1001RBV 1001rb
Text: A dvanced P o w er Te c h n o lo g y ' A P T 1001RBVFR 1000V 11A 1.000Í2 POWER MOS V FREDFET I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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1001RBVFR
O-247
APT1001RBVFR
O-247AD
1001RBV
1001rb
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APT30M19JVFR
Abstract: No abstract text available
Text: APT30M19JVFR ADVANCED POW ER Te c h n o l o g y POWER MOSV 300V 130A 0.0190 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M19JVFR
OT-227
APT30M19JVFR
E145592
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APT30M85BNR
Abstract: LSE 405 APT3010BNR APT30M85 016Q
Text: A dvanced P o w er Te c h n o lo g y O D O S APT30M85BNR 300V APT3010BNR 300V POWER MOS IV® 40A 0.0850 35A 0.100Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M A XIM U M R ATING S Symbol All Ratings: T c = 25°C unless otherwise specified.
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APT30M85BNR
APT3010BNR
Ava23
O-247AD
LSE 405
APT30M85
016Q
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1666 International IGR Rectifier IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Sum m ary 100Volt,0.18£l, HEXFET T h e lead less chip c a rrie r LC C p a cka g e re p re se n ts
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IRFE130
JANTX2N6796U
JANTXV2N6796U
MIL-PRF-19500/557]
100Volt
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ru E78996
Abstract: IRF E78996 E78996 rectifier module wiring IRK E78996 701819-303ac thyristors itt
Text: Bulletin 127131 rev. C 09/97 International I Q R Rectifier i r THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR k .4 1 , .5 6 Electrically isolated: DBC base plate • 3 500 V BMS isolating voltage ■ Standard J E D E C package Simplified mechanical designs, rapid assembly
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ULE78996
46K/W
30ohms'
ru E78996
IRF E78996
E78996 rectifier module wiring
IRK E78996 701819-303ac
thyristors itt
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MRF140
Abstract: ENE MICA CASE-211-11
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F M OSFET Line 150 W N-CHANNEL MOS LINEAR RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . d e s ig n e d p r im a r ily fo r lin e a r la rg e -s ig n a l o u tp u t s ta g e s in th e
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1299A International IG R Rectifier dv/dt HEXFET T R A N S IS T O R R E P E T IT IV E A V A L A N C H E A N D IR H M 9 25 0 IR H M 9 3 2 5 0 RATED P -C H A N N E L RAD HARD -200 Volt, 0.315£2, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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2N7380
Abstract: No abstract text available
Text: Preliminary Data Sheet No. PD - 9.1274C International TOR Rectifier IRHY7130CM IRHY8130CM JANSR2N7380 JANSH2N7380 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/614] N -C H A N N E L HEXFET TRANSISTOR MEGA RAD HARD 10OVolt, 0.18Q, MEGA RAD HARD HEXFET
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10OVolt,
2N7380
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1564B International TOR Rectifier IRHM7064 IRHM8064 R E P E T IT IV E A V A LA N C H E A N D d v /d t R A TED HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 60 Vo It, 0.021 Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y
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1564B
IRHM7064
IRHM8064
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L3103L
Abstract: 0T1S IRF4905L
Text: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated
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IRF4905S)
IRF4905L)
IRF4905S/L
L3103L
0T1S
IRF4905L
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Untitled
Abstract: No abstract text available
Text: I , |. International n trt I " R Kectmer I R E P E T IT IV E A V A L A N C H E A N D Provisional Data Sheet No. PD - 9.887B dv/dt RATED HEXFET T R A N S IS T O R IR H M 7 05 4 i r h m s o 54 JAN SR 2N7394 JAN SH 2N7394 [REF: N-CHANNEL MEGA RAD HARD 60 Vo It, 0.03ft, MEGA RAD HARD HEXFET
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c 4977 transistor
Abstract: transistor on 4977 mosfet 452 JSs 97 diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip
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MTV20N50E
c 4977 transistor
transistor on 4977
mosfet 452
JSs 97 diode
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1701 International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7Z60 IRHM8Z60 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 30 Vo It, 0.014Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’ s R A D H A R D te c h n o lo g y
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IRHM7Z60
IRHM8Z60
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs
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MTSF2P02HD/D
2PHX43416-0
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20N50ES
Abstract: MTW20N
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTW20N50E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TM OS POW ER FET 20 AMPERES 500 VOLTS RDS on} = 0-24 OHM IM-Channel Enhancement-Mode Silicon Gate
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information M TD F 1N 02H D Medium Power Surface Mount Products TM O S Dual N -C h an n e l F ield E ffe c t Tran sisto r M o to ro la P re fe rre d D e vice SINGLE TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS R D S on = 0.120 OHM
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IN TE G R A TE D CIRCUIT M65790FP F BTC IM A G E DATA DESCRIPTION M 65790FP F ix e d • is a p p l i e d c o m p re s s io n and le n g th C O M PR ES SIO N Easy M its u b is h i o r ig in a l im a g e d a ta d e c o m p re s s io n B lo c k T r u n c a t io n
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M65790FP
65790FP
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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sidewinder force feedback
Abstract: micro servo 9g how to control sidewinder force feedback 2 7406 ic IC LM319 IC 74LS04 LMS 7805 ic LM339 5BA DIODE IC 74LS02
Text: Maintenance Manual CORPORATION SIDEWINDER Va" Streaming Cartridge Tape Drive M A IN TEN A N C E M A N U A L PART NUMBER 20109—001B COPYRIGHT 1982 ARCHIVE CORPORATION MAINTENANCE MANUAL SIDEWINDER TABLE OF CONTENTS Paragraph Title CHAPTER 1.1 1.2 1.2.1 1.2.2
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20109--001B
A3-14.
A3-18
sidewinder force feedback
micro servo 9g how to control
sidewinder force feedback 2
7406 ic
IC LM319
IC 74LS04
LMS 7805
ic LM339
5BA DIODE
IC 74LS02
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B4207D
Abstract: U880D u880 A4510D U1159D U 6548 D U7660 analoge schaltkreise Schieberegister U61256
Text: !n n I k ä r - J i s j e l e l - c f a n o n Neuheiten Weiterentwicklungen 1988 i l - f Inhalt 1. Analoge Schaltkreise A 1670 V A A B B B B C C C 4510 D 4511 D 460 G 3040 D A 4206 D 4207 D 574 C 670 C 670 C n Schaltkreis zur V e r t ik a la b le n k u n g in
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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