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    JSP SOT23 Search Results

    JSP SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    JSP SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSB003

    Abstract: PMV213SN
    Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.


    Original     		PDF PMV213SN M3D088 PMV213SN MBB076 MSB003

    PMV213SN

    Abstract: PMV213
    Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.


    Original     		PDF PMV213SN M3D088 PMV213SN MBB076 MSB003 771-PMV213SN215 PMV213

    Untitled

    Abstract: No abstract text available
    Text: PMV56XN µTrenchMOS extremely low level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV56XN in SOT23. 2. Features


    Original     		PDF PMV56XN M3D088 PMV56XN MSB003 MBB07

    PMV40UN

    Abstract: ultra low idss MSB003
    Text: PMV40UN TrenchMOS ultra low level FET Rev. 01 — 05 August 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV40UN in SOT23.


    Original     		PDF PMV40UN M3D088 PMV40UN MBB076 ultra low idss MSB003

    Untitled

    Abstract: No abstract text available
    Text: PMV213SN µTrenchMOS standard level FET Rev. 01 — 15 January 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.


    Original     		PDF PMV213SN M3D088 PMV213SN MBB076 MSB003

    PMV31XN

    Abstract: C3137
    Text: PMV31XN µTrenchMOS extremely low level FET Rev. 01 — 26 February 2003 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV31XN in SOT23. 2. Features


    Original     		PDF PMV31XN PMV31XN MSB003 MBB076 C3137

    2N7002F

    Abstract: SP SOT23 2N7002* application
    Text: 2N7002F TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002F in SOT23. 2. Features


    Original     		PDF 2N7002F M3D088 2N7002F 03ab44 SP SOT23 2N7002* application

    philips 2n7002e

    Abstract: No abstract text available
    Text: 2N7002E TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002E in SOT23. 2. Features


    Original     		PDF 2N7002E M3D088 2N7002E 03ab44 philips 2n7002e

    MSB003

    Abstract: SI2302DS
    Text: SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: SI2302DS in SOT23.


    Original     		PDF SI2302DS M3D088 SI2302DS MSB003. MSB003

    MSB003

    Abstract: PMV30UN
    Text: PMV30UN µTrenchMOS ultra low level FET Rev. 01 — 25 June 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV30UN in SOT23.


    Original     		PDF PMV30UN M3D088 PMV30UN MSB003 MSB003

    si2302ds

    Abstract: No abstract text available
    Text: SI2302DS N-channel enhancement mode field-effect transistor Rev. 01 — 03 September 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: SI2302DS in SOT23.


    Original     		PDF SI2302DS M3D088 SI2302DS MSB003 MBB076

    Untitled

    Abstract: No abstract text available
    Text: BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23.


    Original     		PDF BSH111 M3D088 BSH111 MSB003

    PMV117

    Abstract: PMV117EN
    Text: PMV117EN µTrenchMOS enhanced logic level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology Product availability: PMV117EN in SOT23.


    Original     		PDF PMV117EN M3D088 PMV117EN MSB003 MBB076 PMV117

    MSB003

    Abstract: SI2304DS
    Text: SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology Product availability: SI2304DS in SOT23.


    Original     		PDF SI2304DS M3D088 SI2304DS MSB003

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV90EN O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMV28UN O-236AB)

    2N7002 NXP MARKING

    Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
    Text: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF ON5520 O-236AB) 2N7002 ON5520 2N7002 NXP MARKING fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code smd TRANSISTOR code marking 05 sot23

    Untitled

    Abstract: No abstract text available
    Text: BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23.


    Original     		PDF BSH111 M3D088 BSH111 MSB003

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV185XN O-236AB) gate-sou15

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV20XN O-236AB) TRANSISTOR SMD MARKING CODE 1 KW

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV33UPE O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMV32UP O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Rev. 1 — 30 March 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV22EN O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV48XP O-236AB)