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    MKP 1.44/A

    Abstract: MKP 1.44/A capacitor MN4680-A-JSP
    Text: Loose JSP Taped Fig.1 MKP Series Fig. 2 mEtaLLizEd POLYPROPYLENE FILM capacitor D.C. AND PULSE APPLICATIONS Typical applications: Automotive and Industrial applications Capacitor for DC-DC converter, inverter and supply High Capacitance per volume PRODUCT CODE: JSP


    Original     		PDF

    IR512

    Abstract: ir5100 IR433 20E-3 IR5100-A-JSP MKP 1.44/A capacitor
    Text: Loose JSP Taped Fig.1 MKP Series Fig. 2 metallized POLYPROPYLENE FILM capacitor D.C. AND PULSE APPLICATIONS Typical applications: Automotive and Industrial applications Capacitor for DC-DC converter, inverter and supply High Capacitance per volume PRODUCT CODE: JSP


    Original     		PDF

    IN4100

    Abstract: capacitor polyester pme IR510 IR433 IR4270-0-JSP in4150 ir5100 IR4220 IR4470-0-JSP IR4390
    Text: T ER D N U Loose EN M P O VEL JSP DE MKT Series METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, bypassing, interference suppression in low voltage applications i. e. Automotive Fig. 1


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2944AUB – 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to


    Original     		PDF 2N2944AUB 2N2946AUB MIL-PRF-19500/382 2N2944AUB 2N2946AUB 2N2944A 2N2946A MIL-PRF-19500/382s T4-LDS-0236-1,

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Very fast switching


    Original     		PDF 2N7002K M3D088

    fet 2n7002K

    Abstract: 03an72 2N7002K
    Text: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible


    Original     		PDF 2N7002K M3D088 MSB003 03ab60 771-2N7002K-T/R 2N7002K fet 2n7002K 03an72

    03aa03

    Abstract: 2N7002-T1 2N7002T
    Text: 2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002T mbb076 2N7002T 03aa03 2N7002-T1

    03aa03

    Abstract: 2N7002-1 2N70021
    Text: 2N7002 N-channel TrenchMOS FET Rev. 05 — 15 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002 mbb076 2N7002 03aa03 2N7002-1 2N70021

    fet 2n7002K

    Abstract: MSB003 2N7002K 03ab09
    Text: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible


    Original     		PDF 2N7002K M3D088 fet 2n7002K MSB003 2N7002K 03ab09

    2n7002-1

    Abstract: 2N7002 PHILIPS PHILIPS 2N7002 MBB076 2N7002* application 2N7002 2N7002-03 HZG336 2n70020 2N70021
    Text: 2N7002 N-channel TrenchMOS FET Rev. 06 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002 mbb076 2N7002 2n7002-1 2N7002 PHILIPS PHILIPS 2N7002 MBB076 2N7002* application 2N7002-03 HZG336 2n70020 2N70021

    2N7002F

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F

    2N7002F

    Abstract: SP SOT23 2N7002* application
    Text: 2N7002F TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002F in SOT23. 2. Features


    Original     		PDF 2N7002F M3D088 2N7002F 03ab44 SP SOT23 2N7002* application

    philips 2n7002e

    Abstract: No abstract text available
    Text: 2N7002E TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002E in SOT23. 2. Features


    Original     		PDF 2N7002E M3D088 2N7002E 03ab44 philips 2n7002e

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 01 — 21 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original     		PDF 2N7002KA 2N7002KA

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original     		PDF 2N7002KA 2N7002KA

    2N7002F

    Abstract: 2N7002F_2
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F 2N7002F_2

    03aa03

    Abstract: 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application
    Text: 2N7002 N-channel TrenchMOS FET Rev. 04 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002 mbb076 03aa03 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application

    1.4944

    Abstract: 2N7002E
    Text: 2N7002E N-channel TrenchMOS FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 1.4944 2N7002E

    2N7002E

    Abstract: 2N7002-E3
    Text: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 2N7002E 2N7002-E3

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 2N7002E

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 2N7002E 771-2N7002E-T/R

    2N7002F

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F 771-2N7002F-T/R

    Untitled

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F

    Untitled

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


    Original     		PDF 2N2857UB MIL-PRF-19500/343 2N2857UB 2N2857. T4-LDS-0223-1,