7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8856-AS TECHNICAL DATA FEATURES: • > SUITABLE FOR Ku-BAND AM PLIFIER H IG H POW ER P-jdB = 3 3 .5 dBm at f = 14.5 GHz H IG H GAIN G id B = 6 .5 d B a t f = 14.5 GHz ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C
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JS8856-AS
conduct18
856-A
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JS8856-AS
Abstract: JS8856
Text: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8856-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 33 5 dBm at f = 14.5 GHz HIGH GAIN GidB = 6.5 dB at f = 14.5 GHz RF P E R F O R M A N C E SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION
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JS8856-AS
JS8856-AS
JS8856
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JS8834-AS
Abstract: No abstract text available
Text: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36
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S8834
JS8834-AS
S8835
JS8835-AS
S8836A
S8836B
JS8836A-AS
S8837A
JS8837A-AS
S8838A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET J S 8 8 5 6 -A S Power GaAs FETs Chip Form Features • High power - P 1dB = 3 3 .5 dBm at f = 14.5 G H z • High gain - G idB = 6 .5 dB at f = 14.5 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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JS8856-AS
MW10140196
JS8856-AS
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