tqfp128 weight
Abstract: RS232-Connector C161 C161CS J1850 JP13
Text: kitCON-161CS/JC/JI Hardware-Manual Edition December 1999 A product of a PHYTEC Technology Holding company kitCON-161CS/JC/JI In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark symbol does not infer that a
|
Original
|
PDF
|
kitCON-161CS/JC/JI
L-356e
D-55135
L-314e
tqfp128 weight
RS232-Connector
C161
C161CS
J1850
JP13
|
3K45
Abstract: No abstract text available
Text: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%
|
Original
|
PDF
|
180A020
3K45
|
FPS200
Abstract: schematic diagram of fingerprint sensor schematic diagram of fingerprint attendance sensor block diagram of fingerprint sensor fingerprint based attendance system microcontroller fingerprint block diagram of Fingerprint based security system Fingerprint based security system Veridicom fps200 gabor filter
Text: Nios II Processor-Based Fingerprint Identification System Third Prize Nios II Processor-Based Fingerprint Identification System Institution: College of Communication Engineering, Chongqing University Participants: Ji Wang, Liang Wu, Yong Liu Instructor: He Wei
|
Original
|
PDF
|
1960s,
FPS200
schematic diagram of fingerprint sensor
schematic diagram of fingerprint attendance sensor
block diagram of fingerprint sensor
fingerprint based attendance system
microcontroller fingerprint
block diagram of Fingerprint based security system
Fingerprint based security system
Veridicom fps200
gabor filter
|
Untitled
Abstract: No abstract text available
Text: <^£.m.i-C.and\Ji<Aoi ZPioducti., {Jnc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
|
Original
|
PDF
|
BLT53
OT122D
env24
|
Untitled
Abstract: No abstract text available
Text: 88, 9 DO NOT SCALE DIMENSIONS 85, 4 THIRD ANGLE METRIC IN mm PROJECTION 83, 4 75 X 5, 08 = 76, 2 0,45- S, 08 if i - ~f~ \ —¡f - -ji |r~ ji ji I I ji li ji ~ir~~ -02, 6 0,2 0, 585 DETAIL 21 ,8 0, 85 "X 1 0, 7 -J L-, . i — DETAIL NO N F -48 ROW -Q •o
|
OCR Scan
|
PDF
|
EH-0467-96
--9Q53
|
euro connectors 8609
Abstract: euro connector 8609
Text: 2 „ , 3 4 ^ + 0 -2 4 4 .6 - 0 TECHNICAL SPECIFICATION 1 . 0 - 8.1 1 2 i I íI HOUSING MATERIAL 1516 11 11 11 íI JI JI iI 11 iI JI JI JI iI THERMOPLASTIC POLYESTER U L 9 4V -0 , GREY iI H O U S IN G W HEN CAN USED W IT H CONNECTORS A CONTACT / HARPOON C O N T A C T A C T IV E
|
OCR Scan
|
PDF
|
000e-------------------------------TIN
DIN41612
d\engg\euro\8609
C-8609-2003
euro connectors 8609
euro connector 8609
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1641 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType ji-MOS II 15.9 MAX 0 32±02 “ '/ I High Speed, High Current DC-DC Converter, Chopper Regulator, Relay Drive and Motor Drive Applications
|
OCR Scan
|
PDF
|
2SK1641
|
ocr4
Abstract: 2SD1762 transistor 2a h
Text: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o
|
OCR Scan
|
PDF
|
2SB11Ã
2SD1762tzl
2SD1762.
O-220FP
ocr4
2SD1762
transistor 2a h
|
Untitled
Abstract: No abstract text available
Text: □Mn ADC-530 12-Bit, Ultra-fast, Low-Power A/D Converter FEATURES ji 12-Bit resolution 350 Nanoseconds maximum conversion time Low-power, 2.1 W Small initial errors Three-state output buffers -55 to +125 °C operation Small 32-pin DIP No missing codes i 4L
|
OCR Scan
|
PDF
|
ADC-530
12-Bit,
12-Bit
32-pin
ADC-530
|
Untitled
Abstract: No abstract text available
Text: ÇTEYC-1 15 1H P f l r ò # I I-: i/ft ht j g iS {60 H J iâ T EY C -11 51 H P ^ Î Ï S J k f i .¡it Ü Æ ÜS - ü Ji j r - m ¡i1: í ;i J is h Ji lr: .¡it fV : o 6. 2 2 0 6 8 K P a i li f f ît 2 4 V D C fi'j 0 .2 . 0 .2 5 . 0 .5 :iiiu Hi fr'i : 4 -2 0 m A { - M
|
OCR Scan
|
PDF
|
TEYC-11
24VDC
|
Untitled
Abstract: No abstract text available
Text: 1 QuickS/vitch Products Hi gh-Speed CMOS Q ji ckSwi tch s iconducior,inc. QS34XR245 32- B t Low Resistance Multi Width™ Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5i2 bidirectional switches connect inputs
|
OCR Scan
|
PDF
|
QS34XR245
QS34XR245Q3
32-bit
QS3R245
80-pin
AN-13)
QS34XR245
MDSL-00253-02
|
cl 740
Abstract: No abstract text available
Text: I ITCrtl JI L I I CL*J LI T - l 3/4 5mm Ultra Bright AlInGaP Yellow LED Lamps LTL2F3VYK LTL2H3VYK LTL2P3VYK LTL2R3VYK 8degree 15degree 22degree 30degree Package Dimensions Features Very high luminous intensity output. Low power consumption. High efficiency.
|
OCR Scan
|
PDF
|
15degree
22degree
30degree
cl 740
|
n channel mosfet 900v
Abstract: No abstract text available
Text: 2SK2655-01R FU JI N-channel MOS-FET FAP-IIS Series 900V High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 03.0\ » > Applications - 100W Switching Regulators UPS
|
OCR Scan
|
PDF
|
2SK2655-01R
n channel mosfet 900v
|
L04A
Abstract: No abstract text available
Text: 2SK2654-01 FU JI N-channel MOS-FET FAP-IIS Series 900V > Features - 2Q TO-3P 4.5 M Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - 150W > Outline Drawing High Speed Switching Low On-Resistance
|
OCR Scan
|
PDF
|
2SK2654-01
Vcc-90V;
L04A
|
|
Untitled
Abstract: No abstract text available
Text: 2N930 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS Ji CASE TO-18 TIE 2N930 NPN AND 2N3548 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIERS AND DIRECT COUPLED CIRCUITS. Ä CBE ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
PDF
|
2N930
2N3548
2N930
2N3548
100mA
300mV
400mW
|
017Q
Abstract: No abstract text available
Text: FU JI 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Q 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
|
OCR Scan
|
PDF
|
2SK1969-01
017Q
|
Untitled
Abstract: No abstract text available
Text: 2SK2760-01 FU JI SILSKLrtJiaJG FAP-IIS Series N-channel MOS-FET 600V 9A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 > Applications - 0.6 Switching Regulators
|
OCR Scan
|
PDF
|
2SK2760-01
|
Untitled
Abstract: No abstract text available
Text: I ITEffl JI L I I CL*J k I T - l3/4 5mm Ultra Bright AS AlInGaP Yellow LED Lamps LTL2F3KYK LTL2H3KYK LTL2P3KYK LTL2R3KYK 8degree 15degree 22degree 30degree Package Dimensions Features High luminous intensity output. Low power consumption. High efficiency.
|
OCR Scan
|
PDF
|
15degree
22degree
30degree
|
Untitled
Abstract: No abstract text available
Text: PD - 9.1505A International I R Rectifier IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S IQ E ji-i / p T Voss = -30V RDS on = 0.058Q Top View Description
|
OCR Scan
|
PDF
|
IRF7316
DD2b234
|
Untitled
Abstract: No abstract text available
Text: CRYSTAL RESONATORS Miniature Resistance Weld Type 'h&bkBJHnTAT-49, AT-38 •RESISTANCE OF SERIES RESONANCE Cl AT-38 - . TYPE m& FREQUENCY _ -Ji & ~— 3.072~ 3.5MHz IlS rt-K Fund. 3000 max. 3.5~ 3.8MHz Fund. 1500 max. 3.8~ 4.1MHz Fund. 1200 max.
|
OCR Scan
|
PDF
|
bkBJHnTAT-49,
AT-38
AT-49
AT-49
428Mund.
10//W
50//W
30ppm,
50ppm,
|
Untitled
Abstract: No abstract text available
Text: F U JI 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
|
OCR Scan
|
PDF
|
2SK2027-01
Tch-25X5
|
Untitled
Abstract: No abstract text available
Text: LITEM JI SEMICONDUCTORS MBR1530CT thru 1560CT TO-220CT FEATURES • Plastic package has U /L Flam m ability Classification 94V-0 Exceeds environmental standards of M IL S-19500 Metal of silicon rectifier, m ajority carrier conduction Lo w power loss, high efficiency
|
OCR Scan
|
PDF
|
MBR1530CT
1560CT
O-220CT
S-19500
T0-220
MIL-STD-202
DO-15
|
intel 945 motherboard schematic diagram
Abstract: 3FS SMA CS9233 HPF 505 mPC 514 yamaha ic CS4232 CS4232-KM CS4232-KQ MPU-401
Text: CS4232 Semiconductor Corporation Games Compatible Plug-and-Play Audio System Comjoatible with Sound B la ste r , Sound Blaster Pro , and Windows Sound S ystem ™ Fully Plug and Play Compatible Industry Leading Delta-Sigma Data Converters ADPCM, ji-Law & A-Law
|
OCR Scan
|
PDF
|
CS4232
MPU-401
16-Bit
CS4231/CS4248
CS4232
100-3F8
PNPB00
CSC0004
100-3FC
DS145PP5
intel 945 motherboard schematic diagram
3FS SMA
CS9233
HPF 505
mPC 514
yamaha ic
CS4232-KM
CS4232-KQ
|
2sk2082
Abstract: 2SK2082-01 equivalent
Text: FU JI 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V 9A 150W > Outline Drawing > Features - 1,4Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
|
OCR Scan
|
PDF
|
2SK2082-01
2sk2082
2SK2082-01 equivalent
|