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    JH TRANSISTOR Search Results

    JH TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    JH TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JH6282 Darlington Com plem entary Silicon Power Transistors M JH 6283* . . . designed for general-purpose amplifier and low-apeed switching motor control applications. M JH 6284* • M JH6285 PNP Similar to the Popular NPN 2N6282, 2N6283,2N6284 and the PNP 2N6285,


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    2N6282, 2N6283 2N6284 2N6285, 2N6286 2N6287 JH6282 JH6285 MJH6287 PDF

    three relay stabilizer circuit diagram

    Abstract: jh2as four relay stabilizer circuit diagram DC24V LR26550 speed control of dc motor using ujt scr circuit diagram electronic choke for tube light solid state 220 volt stabilizer circuit TRIAC SW ac motor variable speed control circuit board dia
    Text: JH 30 AMP 1 Form X POWER RELAY WITH SPACE SAVING DESIGN 56 2.205 33 1.299 JH-RELAYS UL File No.: E43028; CSA File No.: LR26550 • Many safety-oriented characteristics incorporated Contact gap: more than 3 mm for 1 Form A and 2 Form A Breakdown voltage for N.O. contact: 2,000 V AC between contacts


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    E43028; LR26550 three relay stabilizer circuit diagram jh2as four relay stabilizer circuit diagram DC24V LR26550 speed control of dc motor using ujt scr circuit diagram electronic choke for tube light solid state 220 volt stabilizer circuit TRIAC SW ac motor variable speed control circuit board dia PDF

    5 hp DC motor speed control using scr

    Abstract: single phase half bridge controlled rectifier scr single phase scr arc welding control schematic sodium vapor lamp scr arc welding control schematic TUBE Light Choke Coil Winding three relay stabilizer circuit diagram scr driver dc motor speed control triac BT 137 scr speed control dc motor using ujt and scr
    Text: JH 30 AMP 1 Form X POWER RELAY WITH SPACE SAVING DESIGN 56 2.205 33 1.299 JH-RELAYS UL File No.: E43028; CSA File No.: LR26550 • Many safety-oriented characteristics incorporated Contact gap: more than 3 mm for 1 Form A and 2 Form A Breakdown voltage for N.O. contact: 2,000 V AC between contacts


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    E43028; LR26550 5 hp DC motor speed control using scr single phase half bridge controlled rectifier scr single phase scr arc welding control schematic sodium vapor lamp scr arc welding control schematic TUBE Light Choke Coil Winding three relay stabilizer circuit diagram scr driver dc motor speed control triac BT 137 scr speed control dc motor using ujt and scr PDF

    npn darlington transistor 150 watts

    Abstract: transistor MJH 11020 Motorola Bipolar Power Transistor Device Data MJH11017 MJH11020 mj10012 motorola MJH11022 oasis MJ10012 MJH10012
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JH 10012 S e » M M 1 0 0 1 2 Complementary Darlington Silicon Power Transistors PNP MJH11017* MJH11019* MJH11021* NPN MJH11018* MJH11020* MJH11022* , . . designed for use as general purpose amplifiers, low frequency switching and


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    MJH10012 MM10012) MJH11018 MJH11020 MJH11022 MJH11017 MJH11019 MJH11021 npn darlington transistor 150 watts transistor MJH 11020 Motorola Bipolar Power Transistor Device Data mj10012 motorola oasis MJ10012 MJH10012 PDF

    npn, transistor, sc 107 b

    Abstract: motorola automotive transistor sc 107 transistor mj10012 motorola mj10012
    Text: MOTOROLA Order this document by MJ10012/D SEMICONDUCTOR TECHNICAL DATA M J10012 M JH 10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.


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    MJ10012/D MJ10012 MJH10012 J10012 340D-01 O-218 npn, transistor, sc 107 b motorola automotive transistor sc 107 transistor mj10012 motorola PDF

    transistor MJH 11020

    Abstract: mjh11021 transistor MJH 11021 JH transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Darlington Silicon Power Transistors PNP M JH 11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High DC Current Gain @ 10 Adc — hpg = 400 Min All Types


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    MJH11020 MJH11022 MJH11017 JH11019 MJH11021 JH11018 JH11020 MJH11022 MJH11017 transistor MJH 11020 transistor MJH 11021 JH transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: IS.IIEU JH>£.m.L-L.onau.ckoi , Line. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2SA1292 Silicon PNP Power Transistor ft DESCRIPTION • Low Collector Saturation Voltage: VCE(sa»)= -0.4V(Max.)@lc= -7.5A


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    2SA1292 2SC3256 PDF

    Untitled

    Abstract: No abstract text available
    Text: - n T> » a <4£. E 'm i _ i - _ _ _ - - * . inteT HARDWARE DESCRIPTION OF THE 8051,8052 AND 80C51 r M - M - PORT 2 DRIVERS PORTO DRIVERS VCCj VS8 I JH l V \ z ï * J PORTO LATCH


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    80C51 AP-125 AP-155 AP-252 80C51BHâ AR-409 AR-517 PDF

    VNDQ09

    Abstract: VQ1006 VQ1004
    Text: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4


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    VQ1004 VQ1006 14-PIN VQ1006 VNDQ06 VNDQ09 VNDQ09 PDF

    texas instruments tip35

    Abstract: TIP35 TIP35C
    Text: TYPES TIP35, TIP35A, TIP35B. TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS X CO H FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP36, TIP36A, TIP36B, TIP36C m C < •o r *o r r rn > mw O jH •


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    TIP35, TIP35A, TIP35B. TIP35C TIP36, TIP36A, TIP36B, TIP36C TIP35 TIP35A texas instruments tip35 PDF

    c4231

    Abstract: c4231 transistor trw RF POWER TRANSISTOR THC4231 trw rf transistor THC4231X1B THC4231X1V
    Text: JH AT THC4231 ttxw w Wide Bandwidth Fast Settling Operational Amplifier 165MHz Closed Loop Bandwidth The THC4231 is a wide bandwidth fast settling opera­ tional amplifier designed specifically for high-speed, lowgain applications. The op amp design is based on current


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    THC4231 165MHz THC4231 anD-883 T0-8/M0-12) THC4231X1V c4231 c4231 transistor trw RF POWER TRANSISTOR trw rf transistor THC4231X1B THC4231X1V PDF

    texas instruments tip32

    Abstract: tip 31c til 31a texas instruments tip31 TIP31C
    Text: TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M ESA SILICON POWER TRANSISTORS 3JCDH m C -< FOR POWER-AMPi-IFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP32, TIP32A, TIP32B, TIP32C u r T> r r m > mw J jH • 40 W at 25°C Case Temperature


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    TIP31, TIP31A, TIP31B. TIP31C TIP32, TIP32A, TIP32B, TIP32C texas instruments tip32 tip 31c til 31a texas instruments tip31 PDF

    44C8

    Abstract: 44C11
    Text: C44C8, C44C11 C44C8, C44C11 NPN PLASTIC POWER TRANSISTORS General Purpose Applications Complementary C45C series c E oU JH DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1,40 3,75 3,88 2,29 2,79. 2,54 3.43 0,56 12.70 14,73 6,35 2,92 2,03


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    C44C8, C44C11 44C11 44C8 PDF

    T1P137

    Abstract: P131T
    Text: TIP130>T,P131' T,P132 III 'W i y 'l l L TIP135, TIP136, T1P137 TIP130, 131, 132 TIP135, 136,137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications DIM A B C D E F G H JH _ J K L M i N MIN MAX 16,51 10.67


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    TIP135, TIP136, T1P137 TIP130 TIP130, T1P137 P131T PDF

    D-SUB FOR VGA Amphenol

    Abstract: 15P D-SUB analog RGB from DVI input to RGB output VGA iec 60945 HATTELAND TRANSISTOR c 5578 B VSD100692-3 VSD100692-4 EN60945 vga cutout dimensions
    Text: DATA SHEET Manufacturer: Hatteland Display AS Product: 26.0 inch Maritime Multi Display MMD Type: JH 26T11 MMD-xxx-Axxx Last Revised: Revision#: 27 May 2011 13 26.0 inch Widescreen (MMD) - Series 1 Features: This Series 1 widescreen is by factory default optically bonded which ensures that the


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    26T11 26BRD EN6095 26TBR 26TSV 26VED 26TWC D-SUB FOR VGA Amphenol 15P D-SUB analog RGB from DVI input to RGB output VGA iec 60945 HATTELAND TRANSISTOR c 5578 B VSD100692-3 VSD100692-4 EN60945 vga cutout dimensions PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Bipolar Transistors -i : . ,*&• M l VCE Pm dBM TYP (dBM) VCE (V) fc <mA> (V) (mA) Mm m. / -fr:.; λ TYP 'rrtifria' (dB) r. JH H S L 2.0 12.5 100 19 27 10 100 9.8 5.5 100 NE46134 1.0 . 12.5 100 20.5 27.5 10 50 9 5.5 100 ] 250 NE461M02 1.0


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    NE46100 NE46134 NE461M02 NE85634 NE856M02 OT-89 NE94430 NE94433 PDF

    BI 370

    Abstract: BI 340 bi 240
    Text: F#9#B?J;  F98IJ7D:E<<I<EH8?%JH?#B;7:9ECFED;DJI IF;9?<?97J?EDI C7J;H?7B Standoff - Thermoplastic U.L. 94 V0. Color, Black :;I?=D Channels provide lead separation and lateral stability for components. Molded tabs retain component leads within the standoff for preassembly.


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    PDF

    k 2645 MOSFET

    Abstract: MAX1536 MAX1536ETI T2055-2 voltage regulator PWM 1999 transconductance sink
    Text: LCJ/JH 9/22/05 P1 KIT ATION EVALU E L B A IL AVA 19-2729; Rev 1; 8/05 3.6A, 1.4MHz, Low-Voltage, Internal-Switch StepDown Regulator with Dynamic Output Voltage Control The MAX1536 constant-off-time, pulse-width-modulated (PWM) step-down DC-to-DC converter is ideal for use in


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    MAX1536 MAX1536 k 2645 MOSFET MAX1536ETI T2055-2 voltage regulator PWM 1999 transconductance sink PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA M JH 16006A D esigner’s Data Sheet NPN Silicon Pow er Transistor POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS 1 kV SWITCHMODE Series T hese transisto rs are d e sig n e d for h ig h -v o lta g e , h ig h -s p e e d , po w e r sw itch ing in


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    MJH16006A/D 6006A 340D-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: CD4019BMS JH H A R R I S S E M I C O N D U C T O R CMOS Quad AND/OR Select Gate December 1992 Pinout Features • High Voltage Type 20V Rating CD4019BMS TO P V IE W • Medium Speed Operation tPHL = tPLH = 60ns (typ.) at CL = 50pF, VDD = 10V B4 • Standardized Symmetrical Output Characteristics


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    CD4019BMS PDF

    transistor M122

    Abstract: No abstract text available
    Text: I l M w j^ m T j r v j r * . j x H ftfjfÇ f S f f f ^ C om m erce Drive i i i u i i i u u i i i t s f y v i n e , PA i r » 18936-1013 lU JtfU 'iv iA f Montgomeryvilte, Tel: 215 631-9840 ^ «ttà _ * « A jh SD142Ö RF & MICROWAVE TRANSISTORS 860-96QMHZ CLASS AB BASE STATION


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    SD142Ö 860-96QMHZ 960MHz SD142Q SD1420 980MH2 SD1420 transistor M122 PDF

    A1273

    Abstract: QRB1134 QRB1113 transistor 48 QRD1114 QRB1114 A-1273
    Text: E O OPTOELECTRONICS REFLECTIVE O B JEC T SENSORS ? f ’ jH N iiïtlfc S é 1 Our-,-: st 8 V ci o - r n - i s ij . i V C[ C DU 111 ;V i • .¡¡S* nun um l in ir Phototransistor C (E) IK) iA) OPB703 YES 40 mA/5 V*2 31 .200 mA 30 K OPB704 YES 40 mA/5 V (23i


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    OPB703 OPB704 QRB1113 QRB1114 OPB705 QRC1113 QRD1313) A1273 QRB1134 transistor 48 QRD1114 QRB1114 A-1273 PDF

    TRANSISTOR 2SC 1617

    Abstract: 2sc1617 ssie SSIE 12 transistor z5t AC73 TRANSISTOR 2SC transistor z9
    Text: 2 s c 1617 SILICON NPN TR IP LE D IFFUSED MESA TRANSISTOR TENTATIVE O B i t I' xjiW -mfatoyiM U n it in mm MOUNTING K I T N 0 .A C 7 3 E L E C T R IC A L C H A R A C T E R IST IC S / “ N jH A H A C T E R I S T I C * V * ? *• í L W\ fL'Û . -y * L ■+ m « a


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    PDF

    tc9123

    Abstract: tc9124ap tc9124 tc9123bp tc9121 TC5002P 7 SEGMENT SINGLE DIGIT wlg TD6102 TC912 ira diode d.o.o 100
    Text: ¿foóhiha INTEGRATEDCIRCUIT I C 9 124 A P ' :••MOSn D I G I T A L INTEGRATED CIRCUIT SILICON MONOLITHIC jH 5 Ê t e c h n ic a l d a t a nit. in ttiin TC9124AP iM/AM S Y N T H E S I Z E R TUNER CONTROLLER TC9124AP is C - M O S L S I d e v e l o p e d


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    TC9124AP 11/AM TC9124AP TC9123BP EJC-TC9124AP-39 TC9I24AP EJC-TC9124AP-40 tc9123 tc9124 tc9121 TC5002P 7 SEGMENT SINGLE DIGIT wlg TD6102 TC912 ira diode d.o.o 100 PDF