SEMISOUTH
Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC
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-55oC
200oC
260oC*
MIL-PRF-19500
O-257)
O-257
SEMISOUTH
1200v 30A to247
JFETs SiC
jfets
downhole
ASJD1200R045
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Untitled
Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Michael Frisch Phone: +49 (0)89 878067-142 michael.frisch@vincotech.com FIRST STANDARD POWER MODULES WITH NORMALLY OFF SiC JFETs FOR HIGHPERFORMANCE SOLAR INVERTERS
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Abstract: No abstract text available
Text: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm
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30-kW
30-kW,
SJEP120R100,
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Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Michael Frisch Phone: +49 89 8780 67-147 michael.frisch@vincotech.com Media Contact: Karina Seifert Phone: +49 89 8780 67-115 karina.seifert@vincotech.com A COMPLETE RANGE OF POWER MODULES WITH VARIOUS SiC SWITCHES FOR HIGHPERFORMANCE, THREE-PHASE SOLAR INVERTERS
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SiC-JFET
Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise
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JFET semisouth
Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET
Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A
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SGDR600P1
5V/-15V
SGDR600P1
SJEP120R050
SJEP120R063
SJEP120R050
JFET semisouth
SEMISOUTH
SJEP120
AN-SS1
ixdd509
SiC JFET
JFET
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Untitled
Abstract: No abstract text available
Text: "Developed for EDN. For more related features, blogs and insight from the EE community, go to www.EDN.com" High-Voltage Silicon MOSFETs, GaN, and SiC: All have a place Philip Zuk, Director of Market Development, High-Voltage MOSFET Group, Vishay Siliconix
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Abstract: No abstract text available
Text: PRELIMINARY PRODUCT BRIEF Subject to change LX1780 SiC Enhancement Mode Silicon Carbide JFET and Bipolar Transistors Driver DESCRIPTION The LX1780 is an extremely fast-switching Gate driver IC for driving normally-off silicon carbide JFET switches. It replaces
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LX1780
LX1780
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IXZ421DF12N100
Abstract: No abstract text available
Text: designfeature Siddarth Sundaresan, Director-Device Design & Fabrication, Michael Digangi, Chief Business Development Officer, and Ranbir Singh, President, GeneSiC Semiconductor, Inc. SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance
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kV-10
-500V
-1000V
IXZ421DF12N100
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SJEP120R125
Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2
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Abstract: No abstract text available
Text: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have
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r1996,
XVI-14.
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Abstract: No abstract text available
Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States
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Abstract: No abstract text available
Text: 1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance Ranbir Singh* and Siddarth Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place; Suite 155 Dulles, VA. USA *Ranbir@ieee.org Abstract— Electrical Characteristics of Industry’s first
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Abstract: No abstract text available
Text: SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C Siddarth Sundaresan1, Ranbir Singh1, R. Wayne Johnson2 1 GeneSiC Semiconductor Inc. Dulles, VA 20166 2 Auburn University, Auburn, AL 36849 email:siddarth.sundaresan@genesicsemi.com, phone: 703 996-8200
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Abstract: No abstract text available
Text: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.
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DE-FG02-07ER84712)
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Abstract: No abstract text available
Text: 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications Ranbir Singh, Siddarth Sundaresan, Eric Lieser and Michael Digangi GeneSiC Semiconductor, Inc. Dulles, VA 20166, USA. ranbir@ieee.org
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ED-23
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thyristor lifetime
Abstract: No abstract text available
Text: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.
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703-996-8200x105.
DE-FG0207ER84712,
thyristor lifetime
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JM7000
Abstract: ltx credence tester ltx ts80 teradyne flex tester credence tester sic wafer j937 optocoupler NAND SiC-JFET ceramic pin grid array package wire bond
Text: Custom Product Capabilities Micross Components formerly Austin Semiconductor has loyally served the Military & Hi-Rel custom assembly and test marketplace for over 22 years. Custom support has been the company foundation since its inception, with the philosophy that if it can be defined by the customer, Micross will support the
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800Mhz
JM7000
ltx credence tester
ltx ts80
teradyne flex tester
credence tester
sic wafer
j937
optocoupler NAND
SiC-JFET
ceramic pin grid array package wire bond
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Abstract: No abstract text available
Text: The Leader in High Temperature Semiconductor Solutions CHT-ATLAS Version: 3.4 12-Nov-13 Last Modification Date Dual Channel Power Transistor Driver General description Features CHT-ATLAS is a high-temperature, high reliability power transistor driver integrated
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12-Nov-13
DS-100781
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CHT-TIT9570A
Abstract: sic normally on fet
Text: The Leader in High Temperature Semiconductor Solutions Version: 1.2 22-Apr-11 Last Modification Date CHT-THEMIS Power Transistor Driver Controller General description Features CHT-THEMIS is the controller block of the Power Transistor Driver solution CHTTHEMIS and CHT-ATLAS. The chipset is
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22-Apr-11
DS-100782
CHT-TIT9570A
sic normally on fet
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors-Signetics Linear Products Product specification Sample-and-hold amplifier NE/SE5537 D ES C R IPTIO N FEATU R ES The NE5537 monolithic samp!e-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to
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NE/SE5537
NE5537
LF198,
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954
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03616J)
2N3954
2N3955
2N3956
2N3957
2N5045
2N5046
2N5047
2N5196
2N5197
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Untitled
Abstract: No abstract text available
Text: RAYTHEON/ SEMICONDUCTOR 11E D | 75^731,0 QQDt.aH 0 | Linear Custom 1C Design Services and Manufacturing _ Thin-Film Sputtering Options Foundation Processes Ion Implant and Metal Options JFET Transistors Thin-Film Resistors
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24-lead
350x175
28-lead
40-lead
310x310
14-lead
16-lead
110x140
20-lead
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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