jedec MO-203
Abstract: MO-203-AB MO-203-AB KS-6 MO-203AB
Text: a 6-Lead Thin Shrink Small Outline Transistor Package [SC70] KS-6 Dimensions shown in millimeters 2.20 2.00 1.80 6 5 4 1 2 3 0.65 BSC 1.30 BSC 1.00 0.90 0.70 0.10 MAX COPLANARITY 0.10 2.40 2.10 1.80 1.10 0.80 0.30 0.15 SEATING PLANE 0.40 0.10 0.22 0.08 COMPLIANT TO JEDEC STANDARDS MO-203-AB
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MO-203-AB
72809-A
jedec MO-203
MO-203-AB
MO-203-AB KS-6
MO-203AB
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Untitled
Abstract: No abstract text available
Text: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Abkündigung nach OS-PD-2010-003 Obsolete acc. to OS-PD-2010-003 Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level
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OS-PD-2010-003
OS-PD-2010-003
D-93055
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Q65110A8160
Abstract: No abstract text available
Text: Golden DRAGON Plus Lead Pb Free Product - RoHS Compliant LCW W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klare Silikonlinse, Chip level conversion • Typischer Lichtstrom: 85 lm bei 350 mA und bis zu 203 lm bei 1 A (3500K) • Besonderheit des Bauteils: hocheffiziente
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3500K)
24-mm
200/Rolle,
1200/Rolle,
Q65110A8160
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smd code book 9u
Abstract: abe 433 smd transistor cy
Text: Golden DRAGON Plus Lead Pb Free Product - RoHS Compliant LCW W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klare Silikonlinse, Chip level conversion • Typischer Lichtstrom: 85 lm bei 350 mA und bis zu 203 lm bei 1 A (3500K) • Besonderheit des Bauteils: hocheffiziente
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PDF
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3500K)
24-mm
200/Rolle,
1200/Rolle,
smd code book 9u
abe 433
smd transistor cy
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Untitled
Abstract: No abstract text available
Text: Golden DRAGON Plus Lead Pb Free Product - RoHS Compliant LCW W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klare Silikonlinse, Chip level conversion • Typischer Lichtstrom: 85 lm bei 350 mA und bis zu 203 lm bei 1 A (3500K) • Besonderheit des Bauteils: hocheffiziente
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PDF
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3500K)
24-mm
200/Rolletage
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LCW W5AP-LXMX-4R9T
Abstract: No abstract text available
Text: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 203 lm bei 1400 mA
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PDF
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24-mm
200/Rolle,
D-93055
LCW W5AP-LXMX-4R9T
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Untitled
Abstract: No abstract text available
Text: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 203 lm bei 1400 mA
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lcw w5ap
Abstract: abe 433 smd code book 9u OHA03621 smd transistor cy w5ap
Text: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 203 lm bei 1400 mA
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24-mm
lcw w5ap
abe 433
smd code book 9u
OHA03621
smd transistor cy
w5ap
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Untitled
Abstract: No abstract text available
Text: DS-ICE37LC512 512K bit, 64KX8 OTP EPROM Description The ICE37LC512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 3.3V power supply in normal read mode operation. Any byte can be accessed in less than 100ns. The ICE37LC512 typically consumes 10mA ,
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DS-ICE37LC512
64KX8)
ICE37LC512
100ns.
32-Lead,
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74HC
Abstract: 74LS M16A M16D MM74HC151 MM74HC151M MM74HC151MTC MM74HC151SJ MTC16
Text: Revised February 1999 EMICONDUCTGRTM MM74HC151 8-Channel Digital Multiplexer General Description T he MM74HC151 high speed Digital m ultiplexer utilizes advanced silicon-gate C M O S technology. Along w ith the high noise im m unity and low pow er dissipation of standard
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MM74HC151
MM74HC151
74HC
74LS
M16A
M16D
MM74HC151M
MM74HC151MTC
MM74HC151SJ
MTC16
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Untitled
Abstract: No abstract text available
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC151 8-Channel Digital Multiplexer General Description The M M74HC151 high speed D igital m ultiplexer utilizes advanced silicon-gate C M O S technology. Along w ith the high noise im m unity and low pow er dissipation of standard
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MM74HC151
M74HC151
MM74HC151
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CCIR 468-2
Abstract: u 2829 4445 DIP SWITCH 10 PIN U2829 TDA audio power amplifier tda audio amplifier TDA4445 4445a IF5249
Text: TDA 4445 A-TDA4445 B TTllLlFtLDKlCSSKi electronic C reativ e T ec hn o lo g ie s QUASI PARA LL EL SOUND PR OC ES SI NG WI TH QU AD RA TU RE INTERCARRIER DE MO DU LA TO R T D A 44 45 B ADDITIONAL: AM DE MODULATOR Technology: Bi po la r . Fe atures : o Very high input sensitivity
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16-pin
TDA4445
53aoos_
16-leads
CCIR 468-2
u 2829
4445
DIP SWITCH 10 PIN
U2829
TDA audio power amplifier
tda audio amplifier
4445a
IF5249
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S0010
Abstract: No abstract text available
Text: Revised February 1999 SEMICONDUCTOR TM MM74HC151 8-Channel Digital Multiplexer General Description The MM74HC151 high speed Digital m ultiplexer utilizes advanced silicon-gate C M OS technology. Along w ith the high noise im m unity and low pow er dissipation of standard
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MM74HC151
S0010
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Untitled
Abstract: No abstract text available
Text: HN28F101 Series 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Fiash Memory organized as 131,072 x 8-bit. The HN28F101 is cap ab le o f in -syste m e le ctrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V
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HN28F101
HN28F101:
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MM74HC595N
Abstract: TH sck 083 74HC 74LS M16A M16B MM74HC595 MM74HC595M MM74HC595SJ MM74HC595WM
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC595 8-Bit Shift Registers with Output Latches General Description T he M M 74H C 595 high speed shift register utilizes advanced silicon-gate C M O S technology. This device pos sesses the high noise im m unity and low pow er consum p
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MM74HC595
MM74HC595
MM74HC595N
TH sck 083
74HC
74LS
M16A
M16B
MM74HC595M
MM74HC595SJ
MM74HC595WM
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74LS139
Abstract: M16A M16D MM74HC139 MM74HC139M MM74HC139MTC MM74HC139SJ MTC16 diode D254
Text: Revised February 1999 E M IC O N D U C T O R T M MM74HC139 Dual 2-To-4 Line Decoder General Description equivalent to the 74LS139. All inputs are protected from dam age due to static discharge by diodes to V qq and T he M M 74H C 139 d ecoder utilizes advanced silicon-gate
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MM74HC139
MM74HC139
74LS139
M16A
M16D
MM74HC139M
MM74HC139MTC
MM74HC139SJ
MTC16
diode D254
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74hc157m
Abstract: No abstract text available
Text: S E M I C O N D U C T O R Revised February 1999 TM MM74HC157 Quad 2-Input Multiplexer General Description T h e M M 74H C 157 high speed Q uad 2-to-1 Line data selecto r/M ultiplexers utilizes advanced silicon-gate CM OS te ch nology. It possesses the high noise im m unity and low
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MM74HC157
74hc157m
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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Untitled
Abstract: No abstract text available
Text: A I R EM I C O C H S eptem ber 1983 I L D N D U G Revised February 1999 T O R TM MM74HC139 Dual 2-To-4 Line Decoder equivalent to the 74LS139. All inputs are protected from dam age due to static discharge by diodes to V qq and General Description The M M 74H C 139 deco d e r utilizes advanced silicon-gate
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MM74HC139
74LS139.
MM74HC139
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74HC
Abstract: 74LS M16A M16D MM74HC157 MM74HC157M MM74HC157MTC MM74HC157SJ MTC16
Text: Revised February 1999 E M IC O N D U C T O R T M MM74HC157 Quad 2-Input Multiplexer General Description T h e M M 74H C 157 high speed Quad 2-to-1 Line data selec tor/M ultiplexers utilizes advanced silicon-gate C M OS te ch nology. It possesses the high noise im m unity and low
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MM74HC157
MM74HC157
74HC
74LS
M16A
M16D
MM74HC157M
MM74HC157MTC
MM74HC157SJ
MTC16
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fototransistor BPW 39
Abstract: BPW39 visible phototransistor
Text: BPW39 Silizium-NPN-Epitaxial-Planar-Fototransistor Silicon NPN Epitaxial Planar Phototransistor Anwendung: Application: Em pfänger in elektronischen Steuer- und R egeleinrichtungen D etector in e lectronic co n tro l and drive circuits Besondere Merkmale:
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BPW39
5033/1EC
BPW39
fototransistor BPW 39
visible phototransistor
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Untitled
Abstract: No abstract text available
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC175 Quad D-Type Flip-Flop With Clear General Description The M M 74H C 175 high speed D -type flip-flop w ith com ple m entary outputs utilizes advanced silicon-gate C M OS technology to achieve the high noise im m unity and low
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MM74HC175
MM74HC175
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74hc123a
Abstract: No abstract text available
Text: September 1983 Revised February 1999 E M IC O N D U C T G R T M General Description The MM74HC123A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technol ogy. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and high
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MM74HC123A
74hc123a
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diode D254
Abstract: 74HC 74LS M16A M16D MM74HC175 MM74HC175M MM74HC175MTC MM74HC175SJ MTC16
Text: Revised February 1999 E M IC O N D U C T G R T M MM74HC175 Quad D-Type Flip-Flop With Clear General Description T he M M 74H C 175 high speed D -type flip-flop w ith com ple m entary outputs utilizes advanced silicon-gate C M OS technology to achieve the high noise im m unity and low
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MM74HC175
MM74HC175
diode D254
74HC
74LS
M16A
M16D
MM74HC175M
MM74HC175MTC
MM74HC175SJ
MTC16
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