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    JEDEC MO-015 BA Search Results

    JEDEC MO-015 BA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP139AIYAHR Texas Instruments JEDEC DDR5 temperature sensor with 0.5 °C accuracy 6-DSBGA -40 to 125 Visit Texas Instruments Buy
    SN74SSQEA32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQE32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments
    SN74SSQEB32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQEC32882ZALR Texas Instruments JEDEC SSTE32882 Compliant Low Power 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy

    JEDEC MO-015 BA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    jedec mo-142 dd

    Abstract: MO-142 jedec mo-142 48BA MS-016 32-PIN jedec mo-015 ba
    Text: Package Mechanical Outlines 1 pin 1 index 1 2 CL 3 .600 .625 28 .530 .550 1.445 1.455 .065 .075 4 7˚ 4 PLCS. .170 .200 Base Plane Seating Plane 5 .015 .050 .070 .080 Note: .045 .065 .016 .022 .120 .150 .100 BSC 0˚ 15˚ .008 .012 6 .600 BSC 7 1. Complies with JEDEC publication 95 MO-015 AH dimensions, although some dimensions may be more stringent.


    Original     		PDF MO-015 28-PIN 63-BALL jedec mo-142 dd MO-142 jedec mo-142 48BA MS-016 32-PIN jedec mo-015 ba

    JEP95

    Abstract: PDIP32 PDIP-32-600
    Text: ZMD-Standard November 2001 Package PDIP32 600 mil MDS 746 Supersedes Edition 03.97 Dimensions in millimetres E A1 Seating Plane L A Based on JEDEC JEP95: MO-015 1 Dimensions c b1 0,254 M e ° Z e1 32 1 D Pin 1 Index area Dimensions of Sub-Group B1 Dimensions of Sub-Group C1


    Original     		PDF PDIP32 JEP95: MO-015 QS-000746-HD-02 JEP95 PDIP32 PDIP-32-600

    jedec mo-142 dd

    Abstract: MO-142 MO-183 TSOP 86 Package 40602 MO-015 jedec mo-015 ba MS-016 Packaging Diagrams soic 16 Jedec package outline
    Text: Package Mechanical Outlines 1 2 3 4 5 6 7 Note: 1. Complies with JEDEC publication 95 MO-015 AH dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches min/max . 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.


    Original     		PDF MO-015 28-LEAD MO-183 MO-180 44-LEAD MO-142 48-LEAD jedec mo-142 dd TSOP 86 Package 40602 jedec mo-015 ba MS-016 Packaging Diagrams soic 16 Jedec package outline

    MO-195

    Abstract: BSC -23-01n15
    Text: DOCUMENT CONTROL NO. PD - 2005 REVISION: D DATE: 08/06/02 .276 7.0 BSC. 0.08 0.10 .197 5.0 BSC .197 5.0 BSC .276 7.0 BSC. .020 0.5 BSC. 1 Pin #1 Corner Pin #1 Corner .011 .015 BOTTOM VIEW Notes: 1 Controlling dimensions in millimeters 2) Ref: JEDEC MO-195 Issue B)


    Original     		PDF MO-195 64-Ball MO-195 BSC -23-01n15

    E16-1

    Abstract: MO-092AC
    Text: PACKAGE DIAGRAM O U T L I N E S CERPACK REV DCN 04 17576 DESCRIPTION UPDATED TO DATE STANDARDIZE APPROVED 4- 6-90 DWG Thomas - i T E1 D e- NOTES: UNLESS OTHERWISE SPECIEIED 1. ALL DIMENSIONS ARE IN INCHES. 2. BSC - BASIC LEAD SPACING BETWEEN CENTERS. 3. SYMBOL ”N” REPRESENTS THE NUMBER OF LEAD!:


    OCR Scan     		PDF E16-1 E20-1 E24-1 E28-1 E28-2 PSC-21 E16-1 MO-092AC

    MO-092AC

    Abstract: E16-1
    Text: PACKAGE DIAGRAM O U T L I N E S CERPACK REV DCN 04 17576 DESCRIPTION U P D A TE D DATE TO S T A N D A R D IZ E DWG APPROVED 4-6-90 Thomas - i T E1 D eNOTES: UNLESS OTHERWISE SPECIEIED 1. ALL DIMENSIONS ARE IN INCHES. 2. BSC - BASIC LEAD SPACING BETWEEN CENTERS.


    OCR Scan     		PDF E16-1 E20-1 E24-1 E28-1 E28-2 MO-092AC E16-1

    28 LEADLESS CHIP CARRIER DWG

    Abstract: MS-009-AE
    Text: PACKAGE DIAGRAM OUTLINES LEADLESS CHIP CARRIER DCN REV DESCRIPTION 17 295 05 UPDATE TO STANDARDIZE DRAWING DATE APPROVAL A E NOTES: 2. E UNLES OTHERWISE SPECIFIED; BSC - BASIC LEAD SPACING BETWEEN CENTERS. DWG # SYMBOL MIN A .060 .075 A1 .050 .065 B1 R9 L 20-1


    OCR Scan     		PDF L20-1 28 LEADLESS CHIP CARRIER DWG MS-009-AE

    7293

    Abstract: No abstract text available
    Text: PACKAGE DIAGRAM O U T L I N E S LEADLESS CHIP CARRIER DCN REV DESCRIPTION DATE 17 295 05 UPDATE TO STANDARDIZE DRAWING APPROVAL A E NOTES: 2. E UNLES OTHERWISE SPECIFIED; BSC - BASIC LEAD SPACING BETWEEN CENTERS. DWG # SYMBOL MIN MAX A .060 .075 A1 .050 .065


    OCR Scan     		PDF L20-1 7293

    MO-058AB

    Abstract: 18 Ld CERDIP DIMENSIONS i50015
    Text: PACKAGE CERDIP DIAGRAM O U T L IN E S PACKAGE DIAGRAM O U T L I N E S CERDIP C o n t i n u e d R EV 04 05 06 DCN 17521 I 8089 _ D ESC RIPTIO N _ UPDATED TO STANDARDIZE DWG REVISED A, Q, & S DIMENSIONS CHANGED b1 MIN DIMENSION ? ? '


    OCR Scan     		PDF D16-1 M-5851 07HERWISE MO-058AB 18 Ld CERDIP DIMENSIONS i50015

    Untitled

    Abstract: No abstract text available
    Text: i l DEC Publication No 9! WITH I NDEX AREA —b N ^ ~ FINISH — - loi— — \ r^h i/ 1 \ — r 4 jf' ì E1a c i _ j â ) 1 2 3 N/ Z lA (1/2 LEAD 4 PLAuES i z é z BASE METAL 4 PLACES ( P U L L L E AD) D1 D Ä D 1 LEAD At a SECTIDN z A BA^E PLANE—\ i


    OCR Scan     		PDF

    jedec ms-019

    Abstract: jc 120 MS-019
    Text: JE2EC P^ toliCûtion No. 95 WITH LEAD FINISH- -"D- I N jJ L X —\ rTS ^ t AREA r-"S N i-^ I \ 1 "I E I i 'r i a JZ4\ m ^ i 2 3 ^ k / V \ ji ^ ^ s- /4 LJJ N /2 i BASE ME T A L A 1 / 2 l e a d :' 4 PLACES d i (b SECTIDN SEE - (FULL LEAD) 4 PLACES _ t zz:


    OCR Scan     		PDF

    DESCRIPTION 6116

    Abstract: BLVD MARK F282 0.1 J 250 MKT
    Text: PACKAGE DIAGRAM OUTLINES FL.-.TPACK REV DCN DESCRIPTION DATE 00 20433 ORIGINAL ISSÜ E 0 5 /0 6 /9 1 APPROVED E3 T E2 1 E3 I 1. 2. 3. u m t t w v D L S P E C IF IE D A LL DIM EN S IONS A R E IN INCHES. BSC - B A SIC LEAD S P A C IN G B ETW EEN C E N T E R S .


    OCR Scan     		PDF f16-1 40HDRWISD F84-3 DESCRIPTION 6116 BLVD MARK F282 0.1 J 250 MKT

    jedec MO-036

    Abstract: 16DO
    Text: REV 04 05 06 DCN DESCRIPTION DATE 17516 18088 22232 UPDATED TO STANDARDIZE DWG REVISED A, Q S DIMENSIONS CHANGED b1 MIN DIMENSION 0 6 /2 0 /9 0 8 /2 0 /9 0 & b1 APPROVED SD& $ 3 -il— ier — SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED) 1. ALL DIMENSIONS ARE IN INCHES.


    OCR Scan     		PDF PSC-2016 jedec MO-036 16DO

    Untitled

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC filC D • fllEDD'ib G0Q3B72 b Ü Â L 6 6 U 2417 B _ 7v7- 05^07 mmMDBBM electronic C rM tM ■ftchnologi»* Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios Features; • Large supply voltage range


    OCR Scan     		PDF G0Q3B72

    Untitled

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC filC D • fi^SOa^b OOOBfibS R U 2416 B inHUlIPWl&tllXI electronic Crtttivt IfcchnotoQiw - 7 = - T 7 - O ? Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios


    OCR Scan     		PDF

    150-110

    Abstract: No abstract text available
    Text: EDI8F1664C100/120/150 mo\ Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module. The module consists of four 4 32Kx8 CMOS Static RAMs in plastic small outline packages, surface mounted onto an epoxy laminate (FR-4)


    OCR Scan     		PDF EDI8F1664C100/120/150 64Kx16 EDI8F1664C 32Kx8 32Kx16 DQ8-DQ15) EDI8F1664C100/120/1SO EDI8F1664C100/120/150 150-110

    transistor 12E

    Abstract: sot 23 PW1 46 OJ31 MPQ6600 7905 to-92 2T118 sot23 PW1 il038 40mR MPQ*6600
    Text: MOTOROLA SC XSTRS/R 12E F 0 I b3fc,72S4 M A X I M U M R A T IN G S Sym bol MPÛ6100 MPQ6600 MPQ6100A MPQ6600A Unit Collector-Emitter Voltage VCEO 40 45 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Veb o 6.0 Vdc ic 50 m Adc Rating Collector Current — Continuous


    OCR Scan     		PDF MPQ6600 MPQ6100A MPQ6600A MPQ6100, PV3-25 MPQ6600, O-116 DIMENS10N-NG Y145M, transistor 12E sot 23 PW1 46 OJ31 7905 to-92 2T118 sot23 PW1 il038 40mR MPQ*6600

    CXO 049

    Abstract: GX6101 CXO 043 BX61 CI043 CXO 046 ci pal 014 V/ci pal 014
    Text: MACH 4 CPLD Family BEYOND PERFO R M A N CE High Performance EE CMOS Programmable Logic FEATURES ♦ High-performance, EE CMOS 3.3-V & 5-V CPLD families ♦ Flexible architecture for rapid logic designs — Excellent First-Tim e-Fit and refit feature — SpeedLocking™ performance for guaranteed fixed timing


    OCR Scan     		PDF M4A3-256/128-7YC10YI CXO 049 GX6101 CXO 043 BX61 CI043 CXO 046 ci pal 014 V/ci pal 014

    U418B

    Abstract: AM-receiver circuit u418 005 418
    Text: U 418 B 7=77’- €>S’-û 7 TnmJllFtyiKIKIiliO electronic CrMtn* Ttchno osi*s Monolithic Integrated Circuit Applications: AM-/FM-/IF- and Audio-Amplifier Features: • Urge supply voltage range V's^S.-.ISV • High AM-Sensitivity • AM-Oscillator for LW, MW and SW


    OCR Scan     		PDF U418B U418B AM-receiver circuit u418 005 418

    Untitled

    Abstract: No abstract text available
    Text: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2117 5M-1982 284mm/ M0-047AC. 554S2

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2111 IR2111 5M-1982 M0-047AC. 554S2

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    100A484

    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels


    OCR Scan     		PDF IDT10484, IDT10A484 IDT100484, IDT100A484 IDT101484, IDT101A484 4096-words 900mW MIL-STD-883, T10484 100A484

    100A484

    Abstract: 100484 Z623 I60S4 10A484
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels


    OCR Scan     		PDF IDT10484, IDT10A484 IDT100484, IDT100A484 IDT101484, IDT101A484 4096-words 900mW MIL-STD-883, IDT10484 100A484 100484 Z623 I60S4 10A484