jedec mo-142 dd
Abstract: MO-142 jedec mo-142 48BA MS-016 32-PIN jedec mo-015 ba
Text: Package Mechanical Outlines 1 pin 1 index 1 2 CL 3 .600 .625 28 .530 .550 1.445 1.455 .065 .075 4 7˚ 4 PLCS. .170 .200 Base Plane Seating Plane 5 .015 .050 .070 .080 Note: .045 .065 .016 .022 .120 .150 .100 BSC 0˚ 15˚ .008 .012 6 .600 BSC 7 1. Complies with JEDEC publication 95 MO-015 AH dimensions, although some dimensions may be more stringent.
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MO-015
28-PIN
63-BALL
jedec mo-142 dd
MO-142
jedec mo-142
48BA
MS-016
32-PIN
jedec mo-015 ba
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JEP95
Abstract: PDIP32 PDIP-32-600
Text: ZMD-Standard November 2001 Package PDIP32 600 mil MDS 746 Supersedes Edition 03.97 Dimensions in millimetres E A1 Seating Plane L A Based on JEDEC JEP95: MO-015 1 Dimensions c b1 0,254 M e ° Z e1 32 1 D Pin 1 Index area Dimensions of Sub-Group B1 Dimensions of Sub-Group C1
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PDIP32
JEP95:
MO-015
QS-000746-HD-02
JEP95
PDIP32
PDIP-32-600
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PDF
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jedec mo-142 dd
Abstract: MO-142 MO-183 TSOP 86 Package 40602 MO-015 jedec mo-015 ba MS-016 Packaging Diagrams soic 16 Jedec package outline
Text: Package Mechanical Outlines 1 2 3 4 5 6 7 Note: 1. Complies with JEDEC publication 95 MO-015 AH dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches min/max . 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.
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Original
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MO-015
28-LEAD
MO-183
MO-180
44-LEAD
MO-142
48-LEAD
jedec mo-142 dd
TSOP 86 Package
40602
jedec mo-015 ba
MS-016
Packaging Diagrams
soic 16 Jedec package outline
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PDF
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MO-195
Abstract: BSC -23-01n15
Text: DOCUMENT CONTROL NO. PD - 2005 REVISION: D DATE: 08/06/02 .276 7.0 BSC. 0.08 0.10 .197 5.0 BSC .197 5.0 BSC .276 7.0 BSC. .020 0.5 BSC. 1 Pin #1 Corner Pin #1 Corner .011 .015 BOTTOM VIEW Notes: 1 Controlling dimensions in millimeters 2) Ref: JEDEC MO-195 Issue B)
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Original
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MO-195
64-Ball
MO-195
BSC -23-01n15
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PDF
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E16-1
Abstract: MO-092AC
Text: PACKAGE DIAGRAM O U T L I N E S CERPACK REV DCN 04 17576 DESCRIPTION UPDATED TO DATE STANDARDIZE APPROVED 4- 6-90 DWG Thomas - i T E1 D e- NOTES: UNLESS OTHERWISE SPECIEIED 1. ALL DIMENSIONS ARE IN INCHES. 2. BSC - BASIC LEAD SPACING BETWEEN CENTERS. 3. SYMBOL ”N” REPRESENTS THE NUMBER OF LEAD!:
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E16-1
E20-1
E24-1
E28-1
E28-2
PSC-21
E16-1
MO-092AC
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PDF
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MO-092AC
Abstract: E16-1
Text: PACKAGE DIAGRAM O U T L I N E S CERPACK REV DCN 04 17576 DESCRIPTION U P D A TE D DATE TO S T A N D A R D IZ E DWG APPROVED 4-6-90 Thomas - i T E1 D eNOTES: UNLESS OTHERWISE SPECIEIED 1. ALL DIMENSIONS ARE IN INCHES. 2. BSC - BASIC LEAD SPACING BETWEEN CENTERS.
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E16-1
E20-1
E24-1
E28-1
E28-2
MO-092AC
E16-1
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PDF
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28 LEADLESS CHIP CARRIER DWG
Abstract: MS-009-AE
Text: PACKAGE DIAGRAM OUTLINES LEADLESS CHIP CARRIER DCN REV DESCRIPTION 17 295 05 UPDATE TO STANDARDIZE DRAWING DATE APPROVAL A E NOTES: 2. E UNLES OTHERWISE SPECIFIED; BSC - BASIC LEAD SPACING BETWEEN CENTERS. DWG # SYMBOL MIN A .060 .075 A1 .050 .065 B1 R9 L 20-1
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L20-1
28 LEADLESS CHIP CARRIER DWG
MS-009-AE
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PDF
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7293
Abstract: No abstract text available
Text: PACKAGE DIAGRAM O U T L I N E S LEADLESS CHIP CARRIER DCN REV DESCRIPTION DATE 17 295 05 UPDATE TO STANDARDIZE DRAWING APPROVAL A E NOTES: 2. E UNLES OTHERWISE SPECIFIED; BSC - BASIC LEAD SPACING BETWEEN CENTERS. DWG # SYMBOL MIN MAX A .060 .075 A1 .050 .065
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L20-1
7293
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PDF
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MO-058AB
Abstract: 18 Ld CERDIP DIMENSIONS i50015
Text: PACKAGE CERDIP DIAGRAM O U T L IN E S PACKAGE DIAGRAM O U T L I N E S CERDIP C o n t i n u e d R EV 04 05 06 DCN 17521 I 8089 _ D ESC RIPTIO N _ UPDATED TO STANDARDIZE DWG REVISED A, Q, & S DIMENSIONS CHANGED b1 MIN DIMENSION ? ? '
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D16-1
M-5851
07HERWISE
MO-058AB
18 Ld CERDIP DIMENSIONS
i50015
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PDF
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Untitled
Abstract: No abstract text available
Text: i l DEC Publication No 9! WITH I NDEX AREA —b N ^ ~ FINISH — - loi— — \ r^h i/ 1 \ — r 4 jf' ì E1a c i _ j â ) 1 2 3 N/ Z lA (1/2 LEAD 4 PLAuES i z é z BASE METAL 4 PLACES ( P U L L L E AD) D1 D Ä D 1 LEAD At a SECTIDN z A BA^E PLANE—\ i
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jedec ms-019
Abstract: jc 120 MS-019
Text: JE2EC P^ toliCûtion No. 95 WITH LEAD FINISH- -"D- I N jJ L X —\ rTS ^ t AREA r-"S N i-^ I \ 1 "I E I i 'r i a JZ4\ m ^ i 2 3 ^ k / V \ ji ^ ^ s- /4 LJJ N /2 i BASE ME T A L A 1 / 2 l e a d :' 4 PLACES d i (b SECTIDN SEE - (FULL LEAD) 4 PLACES _ t zz:
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DESCRIPTION 6116
Abstract: BLVD MARK F282 0.1 J 250 MKT
Text: PACKAGE DIAGRAM OUTLINES FL.-.TPACK REV DCN DESCRIPTION DATE 00 20433 ORIGINAL ISSÜ E 0 5 /0 6 /9 1 APPROVED E3 T E2 1 E3 I 1. 2. 3. u m t t w v D L S P E C IF IE D A LL DIM EN S IONS A R E IN INCHES. BSC - B A SIC LEAD S P A C IN G B ETW EEN C E N T E R S .
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f16-1
40HDRWISD
F84-3
DESCRIPTION 6116
BLVD
MARK F282
0.1 J 250 MKT
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PDF
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jedec MO-036
Abstract: 16DO
Text: REV 04 05 06 DCN DESCRIPTION DATE 17516 18088 22232 UPDATED TO STANDARDIZE DWG REVISED A, Q S DIMENSIONS CHANGED b1 MIN DIMENSION 0 6 /2 0 /9 0 8 /2 0 /9 0 & b1 APPROVED SD& $ 3 -il— ier — SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED) 1. ALL DIMENSIONS ARE IN INCHES.
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PSC-2016
jedec MO-036
16DO
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PDF
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC filC D • fllEDD'ib G0Q3B72 b Ü Â L 6 6 U 2417 B _ 7v7- 05^07 mmMDBBM electronic C rM tM ■ftchnologi»* Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios Features; • Large supply voltage range
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G0Q3B72
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PDF
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC filC D • fi^SOa^b OOOBfibS R U 2416 B inHUlIPWl&tllXI electronic Crtttivt IfcchnotoQiw - 7 = - T 7 - O ? Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios
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PDF
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150-110
Abstract: No abstract text available
Text: EDI8F1664C100/120/150 mo\ Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module. The module consists of four 4 32Kx8 CMOS Static RAMs in plastic small outline packages, surface mounted onto an epoxy laminate (FR-4)
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EDI8F1664C100/120/150
64Kx16
EDI8F1664C
32Kx8
32Kx16
DQ8-DQ15)
EDI8F1664C100/120/1SO
EDI8F1664C100/120/150
150-110
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PDF
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transistor 12E
Abstract: sot 23 PW1 46 OJ31 MPQ6600 7905 to-92 2T118 sot23 PW1 il038 40mR MPQ*6600
Text: MOTOROLA SC XSTRS/R 12E F 0 I b3fc,72S4 M A X I M U M R A T IN G S Sym bol MPÛ6100 MPQ6600 MPQ6100A MPQ6600A Unit Collector-Emitter Voltage VCEO 40 45 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Veb o 6.0 Vdc ic 50 m Adc Rating Collector Current — Continuous
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MPQ6600
MPQ6100A
MPQ6600A
MPQ6100,
PV3-25
MPQ6600,
O-116
DIMENS10N-NG
Y145M,
transistor 12E
sot 23 PW1 46
OJ31
7905 to-92
2T118
sot23 PW1
il038
40mR
MPQ*6600
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PDF
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CXO 049
Abstract: GX6101 CXO 043 BX61 CI043 CXO 046 ci pal 014 V/ci pal 014
Text: MACH 4 CPLD Family BEYOND PERFO R M A N CE High Performance EE CMOS Programmable Logic FEATURES ♦ High-performance, EE CMOS 3.3-V & 5-V CPLD families ♦ Flexible architecture for rapid logic designs — Excellent First-Tim e-Fit and refit feature — SpeedLocking™ performance for guaranteed fixed timing
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M4A3-256/128-7YC10YI
CXO 049
GX6101
CXO 043
BX61
CI043
CXO 046
ci pal 014
V/ci pal 014
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PDF
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U418B
Abstract: AM-receiver circuit u418 005 418
Text: U 418 B 7=77’- €>S’-û 7 TnmJllFtyiKIKIiliO electronic CrMtn* Ttchno osi*s Monolithic Integrated Circuit Applications: AM-/FM-/IF- and Audio-Amplifier Features: • Urge supply voltage range V's^S.-.ISV • High AM-Sensitivity • AM-Oscillator for LW, MW and SW
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U418B
U418B
AM-receiver circuit
u418
005 418
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PDF
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Untitled
Abstract: No abstract text available
Text: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2117
5M-1982
284mm/
M0-047AC.
554S2
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PDF
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2111
IR2111
5M-1982
M0-047AC.
554S2
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PDF
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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PDF
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100A484
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels
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IDT10484,
IDT10A484
IDT100484,
IDT100A484
IDT101484,
IDT101A484
4096-words
900mW
MIL-STD-883,
T10484
100A484
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PDF
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100A484
Abstract: 100484 Z623 I60S4 10A484
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels
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IDT10484,
IDT10A484
IDT100484,
IDT100A484
IDT101484,
IDT101A484
4096-words
900mW
MIL-STD-883,
IDT10484
100A484
100484
Z623
I60S4
10A484
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PDF
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