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    JDV2S01S Search Results

    JDV2S01S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    JDV2S01S Toshiba Original PDF

    JDV2S01S Datasheets Context Search

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    JDV2S01S

    Abstract: No abstract text available
    Text: 20010205 JDV2S01S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4 V


    Original     		PDF JDV2S01S 944E-16 00E-04 249E-12 00E-10

    JDV2S01S

    Abstract: No abstract text available
    Text: JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.5 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		PDF JDV2S01S 000707EAA2 JDV2S01S

    Untitled

    Abstract: No abstract text available
    Text: JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. · Low series resistance: rs = 0.5 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		PDF JDV2S01S

    JDV2S01S

    Abstract: No abstract text available
    Text: JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. · Low series resistance: rs = 0.5 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		PDF JDV2S01S JDV2S01S

    JDV2S01S

    Abstract: No abstract text available
    Text: JDV2S01S 東芝ダイオード シリコンエピタキシャルプレーナ形 JDV2S01S ○ UHF 帯無線 VCO 用 • 容量比が大きい。 単位: mm : C1V/C4V = 2.0 標準 • 直列抵抗が小さい。 : rs = 0.5 Ω (標準) • 2 端子超小型外囲器なので､VCO の小型化に適しています。


    Original     		PDF JDV2S01S JDV2S01S

    Untitled

    Abstract: No abstract text available
    Text: JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.5 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		PDF JDV2S01S

    JDV2S01S

    Abstract: No abstract text available
    Text: JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.5 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		PDF JDV2S01S 000707EAA2 JDV2S01S

    JDV2S01S

    Abstract: No abstract text available
    Text: JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.5 Ω (typ.) • This device is suitable for use in a small-size tuner. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF JDV2S01S JDV2S01S

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    JDV2S01S

    Abstract: TA4205FC 5GHz oscillator
    Text: TA4205FC TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4205FC Use for Voltage Controlled Oscillator VCO . Features • Bias resistors and two transistors for oscillation and buffer are packed in one package; hence, TA4205FC can easily compose a VCO.


    Original     		PDF TA4205FC TA4205FC 25GHz. JDV2S01S 5GHz oscillator

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    marking code V6 33 surface mount diode

    Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
    Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3


    Original     		PDF ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509