JESD 201 class 1A
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . SCHOTTKY RECTIFIERS IN eSMP MSS1P2L and MSS1P3L Diodes - Ultra-Low VF Schottky Rectifiers in Low-Profile MicroSMP Package 1 A, 20 V and 30 V Ultra-Low-VF Schottky Barrier Rectifiers in Low-Profile Surface-Mount Package
|
Original
|
AEC-Q101
VMN-PT0203-1307
JESD 201 class 1A
|
PDF
|
SDP20S120D
Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature
|
Original
|
SDP20S120D
O-247
SDP20S120D
C4692
SEMISOUTH
sdp20s120
solar inverter
SemiSouth Laboratories
|
PDF
|
SEMISOUTH
Abstract: SDA10S120 C-183 silicon carbide
Text: Silicon Carbide PRELIMINARY SDA10S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current
|
Original
|
SDA10S120
O-220
SEMISOUTH
SDA10S120
C-183
silicon carbide
|
PDF
|
SEMISOUTH
Abstract: SDA05S120 sine wave ups SCHEMATIC silicon carbide C15600 solar inverter SemiSouth Laboratories
Text: Silicon Carbide PRELIMINARY SDA05S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current
|
Original
|
SDA05S120
O-220
SEMISOUTH
SDA05S120
sine wave ups SCHEMATIC
silicon carbide
C15600
solar inverter
SemiSouth Laboratories
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Z3PK860 8Amp Low VF Schottky Barrier Diode 60V - Z3PAK OUTLINE OUTLINE DIMENSIONS DIMENSIONS Case : Z3PAK Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF
|
Original
|
Z3PK860
|
PDF
|
Z3PK1045S
Abstract: z3pk1045
Text: Z3PK1045S 10Amp Low VF Schottky Barrier Diode 45V - Z3PAK OUTLINE DIMENSIONS Case : Z3PAK Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability
|
Original
|
Z3PK1045S
10Amp
z3pk1045
|
PDF
|
SEMISOUTH
Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
Text: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current
|
Original
|
SDP10S120D
O-247
SEMISOUTH
SDP10S120D
C2652
induction heating schematic
silicon carbide
"silicon carbide" device
|
PDF
|
fmen-210b
Abstract: FMEN-220B FMEN-2308 FMEN-2208 FMEN2208
Text: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount VRM V IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max
|
Original
|
O-220F
O-262
O-220F2Pin
fmen-210b
FMEN-220B
FMEN-2308
FMEN-2208
FMEN2208
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components MBRD1020CT Thru MBRD10100CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • 10 Amp Schottky Rectifier 20V-100V Halogen free available upon request by adding suffix "-HF"
|
Original
|
MBRD1020CT
MBRD10100CT
0V-100V
O-252)
1020CT-1045CT)
1050CT-10100CT)
|
PDF
|
SP2040
Abstract: No abstract text available
Text: SP2020 THRU SP20100 VOLTAGE 20V ~ 100V 20.0AMP Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free ITO-220 0.5 10 0.2 0.1 3.2 4.5 FEATURES 0.2 0.3 3.7 * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant
|
Original
|
SP2020
SP20100
ITO-220
MIL-STD-202,
13Min
01-Jun-2005
SP2040
|
PDF
|
LB16WKW01-5C12-JC
Abstract: AT607 IEC60529
Text: Standard Size Panel Seal Pushbuttons Series LB Distinctive Characteristics Carefully designed light diffusion and filtering system produces bright, full surface illumination with front panel relamping. Spot illumination available in single and bicolor LEDs.
|
Original
|
LB25WKW01-12-JC
AT9410
LB16WKW01-5C12-JC
AT607
IEC60529
|
PDF
|
sr20100
Abstract: SR2080 sr206 diode SR2020 SR2030 SR2040 SR2050 SR2060
Text: SR2020 THRU SR20100 VOLTAGE 20V ~ 100V 20.0AMP Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free T O-220 FEATURES .412 10.5 MAX. .108 (2.75) * Low forward voltage drop * High current capability
|
Original
|
SR2020
SR20100
O-220
MIL-STD-202,
01-Jun-2002
sr20100
SR2080
sr206 diode
SR2030
SR2040
SR2050
SR2060
|
PDF
|
MSS1P6HM3
Abstract: J-STD-002
Text: New Product MSS1P5, MSS1P6 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency
|
Original
|
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
MSS1P6HM3
J-STD-002
|
PDF
|
J-STD-002
Abstract: MSS1P2L MicroSMP
Text: New Product MSS1P2L, MSS1P3L Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency
|
Original
|
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
MSS1P2L MicroSMP
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: New Product SS2P5, SS2P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses
|
Original
|
AEC-Q101
J-STD-020,
DO-220AA
2002/95/EC
2002/96/EC
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSS1P2L, MSS1P3L www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses
|
Original
|
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
DO-220AA
Abstract: J-STD-002
Text: New Product SS3P3 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses • High efficiency
|
Original
|
J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC
2002/96/EC
11-Mar-11
DO-220AA
J-STD-002
|
PDF
|
DO-220AA
Abstract: J-STD-002
Text: New Product SS2P2L, SS2P3L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses
|
Original
|
J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC
2002/96/EC
11-Mar-11
DO-220AA
J-STD-002
|
PDF
|
DO-220AA
Abstract: J-STD-002 ss1p3lhm3
Text: New Product SS1P3L, SS1P4L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses
|
Original
|
J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC
2002/96/EC
11-Mar-11
DO-220AA
J-STD-002
ss1p3lhm3
|
PDF
|
DO-220AA
Abstract: J-STD-002
Text: New Product SS2P2, SS2P3, SS2P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses
|
Original
|
J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC
2002/96/EC
11-Mar-11
DO-220AA
J-STD-002
|
PDF
|
DO-220AA
Abstract: J-STD-002 DO-220 SS3P3-M3
Text: New Product SS3P3 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses
|
Original
|
J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC
2002/96/EC
11-Mar-11
DO-220AA
J-STD-002
DO-220
SS3P3-M3
|
PDF
|
W108
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT D 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. FT R E V IS IO N S DIST MATERIAL: HOUSING: THERMOPLASTIC, U L94V - 0, BU\CK. TERMINALS: BRIGHT TIN OVER COPPER ALLOY. SCREWS: # 6 - 3 2 STEEL, ZINC PLATING W / CLEAR CHROMATE.
|
OCR Scan
|
UL94V-0,
ECCl-07-002994
JC6-W108-XX
31MAR2000
W108
|
PDF
|
200CNQ030
Abstract: IOR 5300
Text: INTERNATIONAL RECTIFIER SS DE I 4fl554SE 00D5133 55C 0 5 1 3 3 48 5 545 2 IN TE RNAT ION A L R EC TIFI E R Data Sheet No. PD-2.072A INTERNATIONAL RECTIFIER IOR SOOCNQ AND B O I CNQ SERIES 800 Amp Schottky Center Tap Rectifier Module Major Ratings and Characteristics
|
OCR Scan
|
554SE
00D5133
200CNQ
201CNQ
200CNQ030
IOR 5300
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LPR200/201 16-bit Multilevel P ip e lin e R egister DESCRIPTION FEATURES □ Pipeline Registers — Eight 16-bit High-Speed LPR200 or Seven 16-bit High-Speed with a Direct Feed-Through Path (LPR201) The LPR200 and LPR201 are program mable multilevel pipeline registers.
|
OCR Scan
|
LPR200/201
16-bit
LPR200)
LPR201)
LPR200
LPR201
IDT73200
IDT73201.
|
PDF
|
