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    JANUARY1998 Search Results

    JANUARY1998 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    January 1998 Linear Technology LinearTechnology Chronicle Original PDF

    JANUARY1998 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SLMA002

    Abstract: TPA301 TPA301D TPA301DGN TPA301DR
    Text: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208D – JANUARY1998 – REVISED APRIL 2003 D Fully Specified for 3.3-V and 5-V Operation D Wide Power Supply Compatibility D OR DGN PACKAGE TOP VIEW 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL


    Original     		PDF TPA301 350-mW SLOS208D JANUARY1998 TPA301 SLMA002 TPA301D TPA301DGN TPA301DR

    TPA301

    Abstract: No abstract text available
    Text: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208B – JANUARY1998 – REVISED MARCH 2000 D D Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL – 250 mW at VDD = 3.3 V, BTL


    Original     		PDF TPA301 350-mW SLOS208B JANUARY1998 250-mW

    TPA301

    Abstract: 2000 watts audio amplifier schematics Audio Power Amplifier Series High-Performance 200 watt audio amplifier MO-187 SLMA002 TPA301D TPA301DGN TPA301DR
    Text: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208C – JANUARY1998 – REVISED MARCH 2000 D D D OR DGN PACKAGE TOP VIEW Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL


    Original     		PDF TPA301 350-mW SLOS208C JANUARY1998 TPA301 2000 watts audio amplifier schematics Audio Power Amplifier Series High-Performance 200 watt audio amplifier MO-187 SLMA002 TPA301D TPA301DGN TPA301DR

    power amplifier circuit diagram with pcb layout

    Abstract: TPA301 Audio Power Amplifier Series High-Performance 150 watts power amplifier layout 200 watt audio amplifier 800 watt audio amplifier power transistor audio amplifier 500 watts MO-187 SLMA002 TPA301D
    Text: TPA301 350-mW LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS208B – JANUARY1998 – REVISED OCTOBER 1998 D D Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL – 250 mW at VDD = 3.3 V, BTL


    Original     		PDF TPA301 350-mW SLOS208B JANUARY1998 TPA301 power amplifier circuit diagram with pcb layout Audio Power Amplifier Series High-Performance 150 watts power amplifier layout 200 watt audio amplifier 800 watt audio amplifier power transistor audio amplifier 500 watts MO-187 SLMA002 TPA301D

    TPA301

    Abstract: 500 watts audio amplifier diagram 150 watts power amplifier layout MO-187 SLMA002 TPA301D TPA301DGN TPA301DR
    Text: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208C – JANUARY1998 – REVISED MARCH 2000 D D D OR DGN PACKAGE TOP VIEW Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL


    Original     		PDF TPA301 350-mW SLOS208C JANUARY1998 TPA301 500 watts audio amplifier diagram 150 watts power amplifier layout MO-187 SLMA002 TPA301D TPA301DGN TPA301DR

    Untitled

    Abstract: No abstract text available
    Text: STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW34NB20 200 V < 0.075 Ω 34 A ) s ( ct FEATURES SUMMARY • TYPICAL RDS(on) = 0.062 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF O-247 STW34NB20 STW34NB20

    D20NE06

    Abstract: D20NE STD20NE06T4
    Text: STD20NE06 N-CHANNEL 60V - 0.032 Ω - 20A DPAK "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD20NE06 60 V < 0.040 Ω 20 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.032 Ω ■ EXCEPTIONAL dv/dt CAPABILITY


    Original     		PDF STD20NE06 STD20NE06 O-252 D20NE06 D20NE STD20NE06T4

    W38NB20

    Abstract: STW38NB20 STMicroelectronics 0560
    Text: STW38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW38NB20 200 V < 0.065 Ω 38 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.052 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STW38NB20 O-247 W38NB20 STW38NB20 STMicroelectronics 0560

    D20NE

    Abstract: d20ne06 STD20NE06 STD20NE06T4
    Text: STD20NE06 N-CHANNEL 60V - 0.032 Ω - 20A DPAK "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD20NE06 60 V < 0.040 Ω 20 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.032 Ω ■ EXCEPTIONAL dv/dt CAPABILITY


    Original     		PDF STD20NE06 O-252 D20NE d20ne06 STD20NE06 STD20NE06T4

    P55NE06

    Abstract: P55NE P55NE06FP STP55NE06FP p55ne0 aval morocco P55NE06 schematic diagram dc-dc stp55ne06 Part Marking TO-220 STMicroelectronics
    Text: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY


    Original     		PDF O-220/TO-220FP STP55NE06 STP55NE06FP STP55NE06FP O-220 O-220FP P55NE06 P55NE P55NE06FP p55ne0 aval morocco P55NE06 schematic diagram dc-dc Part Marking TO-220 STMicroelectronics

    IDT70914

    Abstract: IDT70914S pn80 70914S25 70914S
    Text: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM PRELIMINARY IDT70914S Integrated Device Technology, Inc. FEATURES: • High-speed clock-to-data output times — Military: 20/25ns (max.) — Commercial: 12/15/20ns (max.) • Low-power operation — IDT70914S


    Original     		PDF IDT70914S 20/25ns 12/15/20ns 58MHz MIL-STD-883, 68-pin J68-1) G68-1) IDT70914 IDT70914S pn80 70914S25 70914S

    Untitled

    Abstract: No abstract text available
    Text: STW38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW38NB20 200 V < 0.065 Ω 38 A ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s (


    Original     		PDF STW38NB20 O-247

    Untitled

    Abstract: No abstract text available
    Text: STW34NB20 N-CHANNEL 200V - 0.062  - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STW34NB20 200 V < 0.075  34 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.062  ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED


    Original     		PDF STW34NB20 O-247

    W34NB20

    Abstract: STW34NB20
    Text: STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.062 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■


    Original     		PDF STW34NB20 O-247 W34NB20 STW34NB20

    P55NE

    Abstract: p55ne0 P55NE06 P55NE06FP STP55NE06 P55n STP55NE06FP C3921 stp55ne
    Text: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY


    Original     		PDF STP55NE06 STP55NE06FP O-220/TO-220FP O-220 P55NE p55ne0 P55NE06 P55NE06FP STP55NE06 P55n STP55NE06FP C3921 stp55ne

    Untitled

    Abstract: No abstract text available
    Text: SGT10S10, 1 HARRIS S E M I C O N D U C T O R January1998 Gate Controlled Unidirectional Transient Surge Suppressors Features Description • Blocking Voltage 100V and 270V Surgector transient surge protectors are designed to protect telecommunication equipment, data links, alarm systems,


    OCR Scan     		PDF SGT10S10, ary19 100mA E135010 100inchas

    Untitled

    Abstract: No abstract text available
    Text: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302F-JANUARY 1993-REVISED JANUARY1998 EPIC Enhanced-Performance Implanted CMOS Submicron Process SN74LVC646A . . . DB, DW, OR PW PACKAGE (TOP VIEW ) Typical V q l p (Output Ground Bounce)


    OCR Scan     		PDF SN54LVC646A, SN74LVC646A SCAS302F-JANUARY 1993-REVISED JANUARY1998 MIL-STD-833, JESD17

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V 4 3642 R 02V T G 3 .3 VO LT 2 M x 6 4 H IG H P E R F O R M A N C E U N B U F F E R E D D IM M S D R A M M O D U L E P R E L IM IN A R Y Features Description • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line SDRAM Module ■ 2 banks 2M x 64 bit organization


    OCR Scan     		PDF cycles/64ms V43642R02VTG V43642R02 January1998

    70914S

    Abstract: No abstract text available
    Text: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM Integrated Device Technology, Inc. FEATURES: • H igh-speed clock-to-data output tim es — M ilitary: 20/25ns (max.) — C om m ercial: 12/15/20ns (max.) • Low -power operation — IDT70914S Active: 800 mW (typ.)


    OCR Scan     		PDF 20/25ns 12/15/20ns IDT70914S MIL-STD-883, 68-pin J68-1) G68-1 80-pin 70914S

    Untitled

    Abstract: No abstract text available
    Text: TISP5070H3BJ, TISF5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998-REVISED SEPTEMBER 1998 TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS


    OCR Scan     		PDF TISP5070H3BJ, TISF5080H3BJ, TISP5110H3BJ, TISP5150H3BJ 1998-REVISED K20/21 GR-108er

    PDSO-G8

    Abstract: No abstract text available
    Text: TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES JANUARY 1998 - REVISED OCTOBER 1998 OVERVOLTAGE PROTECTION FOR LUCENT TECHNOLOGIES LCAS Symmetrical and Asymmetrical


    OCR Scan     		PDF TISPL758LF3D L7581/2/3 GR-1089-CORE PDSO-G8

    TPA301

    Abstract: No abstract text available
    Text: TPA301 350-mW LOW-VOLTAGE AUDIO POWER AMPLIFIER SLQ S 208 - JA N U A R Y 1998 • Fully Specified fo r 3.3-V and 5-V Operation • Wide Power Supply C om patibility 2 V - 5.5 V • O utput Power fo r R|_ = 8 Q - 350 mW at VDD = 5 V, BTL - 250 mW at VDD = 3.3 V, BTL


    OCR Scan     		PDF TPA301 350-mW 250-mW

    Untitled

    Abstract: No abstract text available
    Text: TMS28F200BZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SMJS200E - JUNE 1994 - REVISED JANUARY 1998 Organization. 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block


    OCR Scan     		PDF TMS28F200BZT, TMS28F200BZB 8-BIT/131072 16-BIT SMJS200E 96K-Byte 128K-Byte 16K-Byte 28F200BZx70 28F200BZx80