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    Microchip Technology Inc JANSR2N7261U

    MOSFET N-CH 100V 8A 18ULCC
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    DigiKey JANSR2N7261U Tray 50
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    Avnet Americas JANSR2N7261U Tray 50
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    International Rectifier JANSR2N7261

    MOSFET Transistor, N-Channel, TO-205AF
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    Quest Components JANSR2N7261 25
    • 1 $520.875
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    JANSR2N7261 7
    • 1 $799.05
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    JANSR2N7261 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    JANSR2N7261 International Rectifier RADIATION HARDENED POWER MOSFET Original PDF
    JANSR2N7261 International Rectifier REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR Original PDF
    JANSR2N7261 International Rectifier 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package Original PDF
    JANSR2N7261U International Rectifier RADIATION HARDENED POWER MOSFET Original PDF
    JANSR2N7261U Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N CHANNEL MOSFET LCC-18 Original PDF

    JANSR2N7261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 91806C RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7130 100K Rads (Si) IRHE3130 300K Rads (Si) IRHE4130


    Original     		PDF 91806C LCC-18) IRHE7130 JANSR2N7261U MIL-PRF-19500/601 IRHE3130 IRHE4130 IRHE8130 1000K

    2N7261U

    Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
    Text: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage


    Original     		PDF 1806A IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U 100Volt, 1x106 2N7261U IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U

    IRHE7130

    Abstract: IRHE3130 IRHE4130 IRHE8130 JANSR2N7261U LCC-18
    Text: PD - 91806B RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRHE7130 100K Rads (Si) 0.18Ω IRHE3130 300K Rads (Si)


    Original     		PDF 91806B LCC-18) IRHE7130 JANSR2N7261U MIL-PRF-19500/601 IRHE3130 IRHE4130 IRHE8130 1000K IRHE7130 IRHE3130 IRHE4130 IRHE8130 JANSR2N7261U LCC-18

    IRHE3130

    Abstract: IRHE4130 IRHE7130 IRHE8130 JANSR2N7261U LCC-18
    Text: PD - 91806C RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7130 100K Rads (Si) IRHE3130 300K Rads (Si) IRHE4130


    Original     		PDF 91806C LCC-18) IRHE7130 JANSR2N7261U MIL-PRF-19500/601 IRHE3130 IRHE4130 IRHE8130 1000K IRHE3130 IRHE4130 IRHE7130 IRHE8130 JANSR2N7261U LCC-18

    2N7261

    Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261
    Text: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage


    Original     		PDF 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 100Volt, 1x106 2N7261 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261

    IRF 250

    Abstract: IRF N-Channel Power MOSFETs IRHF3130 IRHF4130 IRHF7130 IRHF8130 JANSR2N7261
    Text: PD - 90653F IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7130 IRHF3130 IRHF4130 IRHF8130 Radiation Level 100K Rads (Si) 300K Rads (Si)


    Original     		PDF 90653F IRHF7130 JANSR2N7261 MIL-PRF-19500/601 IRHF3130 IRHF4130 IRHF8130 1000K IRF 250 IRF N-Channel Power MOSFETs IRHF3130 IRHF4130 IRHF7130 IRHF8130 JANSR2N7261

    78009

    Abstract: g268a IRHF3130 IRHF4130 IRHF7130 IRHF8130 JANSR2N7261
    Text: PD - 90653D IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRHF7130 100K Rads (Si) 0.18Ω IRHF3130 300K Rads (Si)


    Original     		PDF 90653D IRHF7130 JANSR2N7261 MIL-PRF-19500/601 IRHF3130 IRHF4130 IRHF8130 1000K 78009 g268a IRHF3130 IRHF4130 IRHF7130 IRHF8130 JANSR2N7261

    IRHF3130

    Abstract: IRHF4130 IRHF7130 IRHF8130 JANSR2N7261
    Text: PD - 90653E IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHF7130 100K Rads (Si) IRHF3130 300K Rads (Si) IRHF4130


    Original     		PDF 90653E IRHF7130 JANSR2N7261 MIL-PRF-19500/601 IRHF3130 IRHF4130 IRHF8130 1000K IRHF3130 IRHF4130 IRHF7130 IRHF8130 JANSR2N7261

    Untitled

    Abstract: No abstract text available
    Text: PD - 90653F IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7130 IRHF3130 IRHF4130 IRHF8130 Radiation Level 100K Rads (Si) 300K Rads (Si)


    Original     		PDF 90653F IRHF7130 JANSR2N7261 MIL-PRF-19500/601 IRHF3130 IRHF4130 IRHF8130 1000K

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U JANSR (100K RAD(Si)


    Original     		PDF MIL-PRF-19500/601 2N7261 2N7261U T4-LDS-0119 JANSR2N7261 JANSF2N7261 JANSR2N7261U

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    2N7261

    Abstract: 2N7261U JANSF2N7261 JANSF2N7261U JANSR2N7261 JANSR2N7261U
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U JANSR (100K RAD(Si)


    Original     		PDF MIL-PRF-19500/601 2N7261 2N7261U T4-LDS-0119 JANSR2N7261 JANSF2N7261 JANSR2N7261U 2N7261 2N7261U JANSF2N7261 JANSF2N7261U JANSR2N7261 JANSR2N7261U

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


    Original     		PDF IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX

    transistors H128

    Abstract: 2N7261 IRHF7130 IRHF8130 JANSR2N7261 HG-18
    Text: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R l AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7130 IRH FBI 3 0 ;n N-CHANNEL 2 IM-7261 JANSR2N7261 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs


    OCR Scan     		PDF IRHF7130 IRHF8130 2N7261 JANSR2N7261 JANSHSN7S61 irhf8130 IRHF7130, IRHF8130, transistors H128 HG-18

    JANSR2N7261

    Abstract: No abstract text available
    Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 JANSR2N7261

    IRHE7110

    Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
    Text: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0


    OCR Scan     		PDF 4flss452 IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN80S4 IRHN7130 1RHF8130

    Untitled

    Abstract: No abstract text available
    Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHE9230 IRHN7054 IRHN8054