FS1-R26-3001
Abstract: SFF-8086 FS1-R26-2001 SFF8086
Text: 7 8 6 5 1.14 MIN 1 2 3 4 13.39±0.10 REVISIONS 11.50 11.80±0.10 REV. 8.60 DESCRIPTION ECN DATE APPROVED C PROPOSAL JAN21/07 ML D E TOLERANCE ADDED TO LOCATION PIN FS1-R26-3001 ADDED FEB27/07 ZLJ F G H J APR05/07 ZLJ DIAM. PEG DIM'S. ADDED, TOLERANCE ADDED TO .472 APR09/07
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JAN21/07
FEB27/07
APR05/07
AUG10/07
FS1-R26-3001
APR09/07
FS1-R26-2001
FS1-R26-3001
28/SEP/06
28/SEP/06
SFF-8086
SFF8086
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Q62702-F1594
Abstract: transistor marking RHs
Text: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OT-143R
Q62702-F1594
900MHz
Jan-21-1997
Q62702-F1594
transistor marking RHs
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Q62702-Z2035
Abstract: VPS05163
Text: PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage 4 • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP 3 2 1 Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C 3=E VPS05163
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Q62702-Z2035
VPS05163
OT-223
Jan-21-1999
100MHz
Q62702-Z2035
VPS05163
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IC 2272
Abstract: Q62702-F1601 GMA marking
Text: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143R
Q62702-F1601
Jan-21-1997
IC 2272
Q62702-F1601
GMA marking
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BFP 181R
Abstract: IC 7449 Q62702-F1685 SIEMENS marking
Text: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143R
Q62702-F1685
Jan-21-1997
BFP 181R
IC 7449
Q62702-F1685
SIEMENS marking
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26 pin ribbon cable connector female
Abstract: CONNECTOR 5 PIN pitch 2.54mm 70400A
Text: Molex Welcome Connectors Interconnects electrical,electronic, fiber .able, SIMM, DIMM, PLCC, I/O, Input/output, Microminature, industrial Print Search By: Datasheet Ribbon Cable and Wire Trap Connectors 2.54mm .100" C-Grid SL" Insulation Displacement Connector Assembly,
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70400a
70400a
26 pin ribbon cable connector female
CONNECTOR 5 PIN pitch 2.54mm
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Untitled
Abstract: No abstract text available
Text: 友順科技股份有限公司 UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-150102 Issue Date Jan-21-2015 LR1108G SOT-25 Separate into LR1108G/LR1108EG Page 1 of 2 變更主旨 TITLE : LR1108G SOT-25區分為LR1108EG及LR1108G.
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IC-PPCN-150102
Jan-21-2015
LR1108G
OT-25
LR1108G/LR1108EG
OT-25å
LR1108EGå
LR1108G.
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SG101
Abstract: M38510/10105 JAN2101AJ M38510 SG2101AJ 10105bea SG2101 sg m38510
Text: SG2101A ADDENDUM TO SG101A DATA SHEET SILICON GENERAL DUAL OPERATION AL AMPLIFIERS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEATURES The SG2101A is a dual version of the SG101A Operational Amplifier and consists of two independent dice in the same
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SG2101A
SG2101A
SG101A
SG101A
100nA
16-PIN
SG2101AF/883B
SG2101AF
SG101
M38510/10105
JAN2101AJ
M38510
SG2101AJ
10105bea
SG2101
sg m38510
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Untitled
Abstract: No abstract text available
Text: A D B REVISIONS ECN, ERN NO. SYM ZONE .650±.01 5 [16.51 ±0.38] G H J 1,108± .015 [28.1 4±0.38] TOP LED 1 TOP LED 2 ADD DWV Sc OPERATING TEMP. JAN. 79, 72 L.CHAN ADD SHIELD TAIL DIM. AUG. 19, 13 L.CHAN ADD TOLERANCE EOR CUT-OUT AUG. 30, 13 L.CHAN r \ j
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101M
Abstract: No abstract text available
Text: 1. M echanical D im en sions: 2. S ch em a tic: 1 O- c \ 5.40 2 o- 3. E lectrica l SIDE VIEW S p ecifica tio n s: OCL: 100uH±20% I.O KH z 1V DCR: 0.300 Ohms Max IDC: 1.05Adc Max Notes! 1. S a ld c rn b ilrty : L e n d s s h a ll m e e t M IL - 5 T D - 2 0 2 G ,
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100uHÂ
05Adc
MIL-5TD-202G,
UL94-V-0
El51356
t-125
101M
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Untitled
Abstract: No abstract text available
Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E
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Q62702-Z2035
OT-223
Jan-21-1999
100MHz
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sg2101AF
Abstract: 10105 SG101A
Text: SG2101A 5IUCDN ADD ENDU M TO SG101A DATA SHEET ŒNERAL DUAL OPERATIONAL AMPLIFIERS UNEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2101A is a dual version of the SG101A Operational Amplifier and consists of two independent dice in the same package. '
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SG2101A
SG101A
100nA
SG2101A
14-PIN
SG101AT/883B
SG101AT
sg2101AF
10105
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42RA
Abstract: No abstract text available
Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E
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PDF
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Q62702-Z2035
OT-223
Jan-21-1999
100MHz
Jan-21
42RA
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SG-101
Abstract: No abstract text available
Text: SG2101A SILICON ADDENDUM TO SG101A DATA SHEET GENERAL DUAL OPERATIONAL AMPLIFIERS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2101A is a dual version of the SG101A Operational Amplifier and consists of two independent dice in the same package. •
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SG2101A
SG101A
SG2101A
SG101A
100nA
16-PIN
SG2101AF/883B
SG2101AF
SG-101
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3M tape, 1350
Abstract: E84081 Sumitomo E4008 bobbin ul17385 bobbin SUMITOMO E54705 Sumitomo E4008 MW-80 17T85 0L1950
Text: 1. M e c h a n i c a l r Dim e n si o n s: 2. Schematic: A 0 .5 6 0 Ma ^_0.550 LINE Max_^ CHIP X a 2 O O ro uo CL >, I— Q O cn d 0.020 3 . Electrical S pe c if ic a t io n s : Tunns Ratio: OCL: P1-4 Leakage C w /w : L: ( 1 —4 ) : ( 1 0 —7) 408uH (P1-4)
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XF1315
0L1950
408uH
10NHz;
100KHz,
P1-10)
10NHz,
2500MAC
100NHz,
15Vp-p
3M tape, 1350
E84081
Sumitomo E4008 bobbin
ul17385
bobbin SUMITOMO
E54705
Sumitomo E4008
MW-80
17T85
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TNI30BF
Abstract: No abstract text available
Text: SUNLED CORPORATION 20793 E. VALLEY BLVD. #C SUNLED WALNUT.CA.91789, U.S.A. E-MAIL: sales@sunled.com URL ADDRESS: http://www.sunled.com TNI30BF 3mm Infrared Emitting Diode *Blue transparent Lens "k Î io Y— J5 j 3(.118) Absolute Maximum Ratings (Ta = 25 C)
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TNI30BF
JAN21
TNI30BF
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TNI30W
Abstract: SunLED
Text: SUNLED CORPORATION 20793 E. VALLEY BLVD. #C SUNLED WALNUT.CA.91789, U.S.A. E-MAIL: sales@sunled.com URL ADDRESS: http://www.sunled.com TNI30W 3mm Infrared Emitting Diode * Water Clear Lens "k Î io Y— .3 j 3(.118) Absolute Maximum Ratings (Ta = 25 C) Power Dissipation
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TNI30W
JAN21
TNI30W
SunLED
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Untitled
Abstract: No abstract text available
Text: 3. E le c tr ic a l 1. D im e n s io n s : — 0.50 S p e c ific a tio n s : 2 5 °C solation Voltage: Max — " X' rx ^ O •- 4H H H f -in0.030 0.020 0.01 6 1500 VAC Turns Ratio: 1 6 — 14 :(1 Turns Ratio: (1 1—9 ) : ( 6 —7 —S)=1 :2.41 CT ±3%
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XF0013B23B
100KHz
-65dB
XP0013R23R
Jan-21
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SG101
Abstract: No abstract text available
Text: SG2101A SILICON ADDENDUM TO SG101A DATA SHEET GENERAL DUAL OPERATIONAL AMPLIFIERS LINEAR IN TEG R ATED CIRCUITS DESCRIPTION FEATURES The SG2101A is a dual version of the SG101A Operational Amplifier and consists of two independent dice in the same package.
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OCR Scan
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SG101A
SG2101A
100nA
SG2101A
16-PIN
SG2101AF/883B
SG2101AF
SG101
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