KDS135S
Abstract: JA MARKING SOT23 marking J1
Text: SEMICONDUCTOR KDS135S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 JA 1 2 Item Marking Description Device Mark JA KDS135S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS135S
OT-23
KDS135S
JA MARKING SOT23
marking J1
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Marking JA
Abstract: KTK951S
Text: SEMICONDUCTOR KTK951S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. ① ② A JE 2 J 1 Item Marking Description Device Mark J KTK951S IDSS Grade E C, D, E * Lot No. JA 2009. 1st Week [J:1st Character, A:2nd Character]
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KTK951S
OT-23
Marking JA
KTK951S
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OCR Scan
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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BAV74
Abstract: No abstract text available
Text: BAV74 Dual Surface Mount Switching Diode SOT-23 Features For high-speed switching appilication. Common cathode. Applications Small signal switching Ordering Information Dimensions in inches and millimeters Type No. Marking Package Code BAV74 JA
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BAV74
OT-23
BAV74
100mA
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BAV70
Abstract: BAV74
Text: BAV70 / BAV74 BAV70 / 74 3 Connection Diagram 3 A4 2 1 1 SOT-23 3 2 MARKING A4 BAV74 BAV70 1 2 JA Small Signal Diode Absolute Maximum Ratings* Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Value Units 70 50 200
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BAV70
BAV74
OT-23
BAV70
BAV74
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BAV70
Abstract: BAV74 BAV99 fairchild sot-23 bav70 FAIRCHILD DIODE
Text: BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value
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BAV70
OT-23
BAV74
BAV70
BAV99
BAV70oduct
BAV74
fairchild sot-23 bav70
FAIRCHILD DIODE
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fairchild sot-23 bav70
Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Text: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BAV70
BAV74
OT-23
BAV70
BAV99
fairchild sot-23 bav70
sot-23 body marking A4
MARKING W2 SOT23
BAV70 ON
marking code w2 sot23
fairchild s sot-23 Device Marking
BAV74
sot-23 MARKING CODE A4
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BAV70
Abstract: BAV74 1JA2 BAV70 ON diode bav70 a433
Text: BAV70 / BAV74 Discrete POWER & Signal Technologies N BAV70 / 74 3 1 2 SOT-23 1 3 CONNECTION DIAGRAMS A4 3 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BAV70
BAV74
OT-23
BAV70
BAV7V74
BAV74
1JA2
BAV70 ON
diode bav70
a433
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BAV70
Abstract: BAV74
Text: BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 A4 2 1 1 BAV70 SOT-23 3 2 MARKING A4 BAV74 1 JA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 70 50 Units V V IF AV
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BAV70
BAV70
OT-23
BAV74
BAV74
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Untitled
Abstract: No abstract text available
Text: BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 A4 2 1 1 BAV70 SOT-23 3 2 MARKING A4 BAV74 1 JA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 70 50 Units V V IF AV
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BAV70
BAV70
OT-23
BAV74
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marking Z2
Abstract: BZX84C5V1 BZX84C5V6
Text: 118 11 DÛ I MMm h m I ÀX \ SOT-23/TO-236AB 2 \/ M / ‘TM PZ’ ZENER D IO D E S ELECTRICAL CH ARACTERISTICS at A = 25 C Zener Voltage Leakage Current Zener Impedance Pinning Min. Nom. Max. @l ZT Max @VR Max. ZZT @ IZT Marking V (V) (V) (mA) (|JA) (V)
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OCR Scan
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OT-23/TO-236AB
TMPZ5230
TMPZ5231
TMPZ5232
TMPZ5234
TMPZ5236
TMPZ5237
TMPZ5239
TMPZ5240
TMPZ5242
marking Z2
BZX84C5V1
BZX84C5V6
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Untitled
Abstract: No abstract text available
Text: DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound.
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DMG6968U
J-STD-020
MIL-STD-202,
DS31738
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Untitled
Abstract: No abstract text available
Text: DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package -20V 110mΩ @ VGS = -4.5V 225mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -2.6A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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DMP2225L
AEC-Q101
DS31461
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BAT54A
Abstract: No abstract text available
Text: Preliminary Data Sheet PD-20763 12/01 BAT54A SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20763
BAT54A
OT-23
IR54A
BAT54A
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IR54
Abstract: BAT54 a 20761 PD-20761
Text: Preliminary Data Sheet PD-20761 12/01 BAT54 SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20761
BAT54
OT-23
IR54
BAT54
a 20761
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IR54S
Abstract: BAT54S
Text: Preliminary Data Sheet PD-20762 12/01 BAT54S SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20762
BAT54S
OT-23
IR54S
IR54S
BAT54S
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ir54c
Abstract: BAT54C
Text: Preliminary Data Sheet PD-20760 12/01 BAT54C SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20760
BAT54C
OT-23
IR54C
ir54c
BAT54C
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V
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DMN62D1SFB
DS35252
DMN62D1SFB
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 1.6 @ VGS= 4.5V
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DMN62D1SFB
DS35252
DMN62D1SFB
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A 0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery
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DMN3730UFB4
AEC-Q101
DS35017
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dmp2100u
Abstract: 35P marking DMP2100U-7
Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V BR DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMP2100U
AEC-Q101
DS35718
dmp2100u
35P marking
DMP2100U-7
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