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    J309 TRANSISTOR Search Results

    J309 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    J309 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J310

    Abstract: Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor
    Text: U309/J309/MMBFJ309/U310/J310/MMBFJ310 National Æ Â Semiconductor U309 U310 J309 J310 MMBFJ309 MMBFJ310 /V s U T L /G /1 0 1 0 0 -9 TO-236 SOT-23 TO*M T L/G /10100 -6 G T L /G /1 0 1 0 0 -2 N-Channel JFET Transistor for RF Amplifiers Electrical Characteristics t a


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    U309/J309/MMBFJ309/U310/J310/MMBFJ310 MMBFJ309 MMBFJ310 J310 Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor PDF

    6u sot-23

    Abstract: j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 MMBFJ309
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


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    MMBFJ309 MMBFJ310 MMBFJ309 OT-23 6u sot-23 j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 PDF

    6u sot-23

    Abstract: J309 CBVK741B019 F63TNR J310 MMBFJ309 MMBFJ310 PN2222N J309-J310 UA309
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


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    MMBFJ309 MMBFJ310 MMBFJ309 OT-23 6u sot-23 J309 CBVK741B019 F63TNR J310 MMBFJ310 PN2222N J309-J310 UA309 PDF

    J310

    Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


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    J310

    Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


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    motorola U310

    Abstract: Motorola J310 motorola 539 U310 motorola Allen-Bradley 100-k motorola 2443 VK200 rfc vk200 rfc with 6 turns J309 J310 jfet
    Text: MOTOROLA Order this document by J308/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers J308 N–Channel — Depletion J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25


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    J308/D 226AA) DeviceJ308/D motorola U310 Motorola J310 motorola 539 U310 motorola Allen-Bradley 100-k motorola 2443 VK200 rfc vk200 rfc with 6 turns J309 J310 jfet PDF

    symbol transistor BC108

    Abstract: BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion J308 J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate–Source Voltage VGS


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    226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 symbol transistor BC108 BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA PDF

    j310 equivalent

    Abstract: J310 J310 applications J309 Transistor J310 J308 MCD221
    Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEA TU R ES J308; J309; J310 P IN N IN G - T O -92 • Low noise PIN SYM BOL • Interchangeability of drain and source connections 1 g gate • High gain. 2 s source 3


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    711002b 010bb02 010bb03 j310 equivalent J310 J310 applications J309 Transistor J310 J308 MCD221 PDF

    13000 BR transistor

    Abstract: 13000 transistor TRANSISTOR 13000 J308 J309 SMPJ308 SMPJ309
    Text: Databook.fxp 1/13/99 2:09 PM Page B-61 B-61 01/99 J308, J309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    226AA SMPJ308, SMPJ309 13000 BR transistor 13000 transistor TRANSISTOR 13000 J308 J309 SMPJ308 SMPJ309 PDF

    Untitled

    Abstract: No abstract text available
    Text: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating


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    T0-226AA 462fc PDF

    vk200 choke

    Abstract: j310 j310c variable trimmer MVM010W SM 4151 J308
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF A m plifiers N -C h a n n e l — Depletion J308 J309 J310 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VG S 25 Vdc Forward Gate Current 'G F 10 mAdc


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    O-226AA) vk200 choke j310 j310c variable trimmer MVM010W SM 4151 J308 PDF

    Transistor J310

    Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
    Text: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


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    MMBFJ309 MMBFJ310 OT-23 Transistor J310 J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note PDF

    Untitled

    Abstract: No abstract text available
    Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


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    J308/309/310 -TO-92 MCD212 bbS3831 PDF

    J308

    Abstract: MCD217 transistor 309 J309 J310 UBB114 ti j309
    Text: tbS3T31 0D2M012 2 T2 H A P X Prelim inary specification Philips Sem iconductors N-channel silicon field-effect transistors N AUER J308/309/310 PHILIPS/DISCRETE b?E ]> PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


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    tbS3T31 DD2MG12 J308/309/310 UBB114 MSB033 PINNING-TO-92 J308 MCD217 transistor 309 J309 J310 UBB114 ti j309 PDF

    vk200 choke

    Abstract: MVM010W MVM010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T V H F/U H F Am plifiers N -Chan nel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Forward Gate Current •g f 10 mAdc Total Device Dissipation @ TA = 25°C


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    b3b72SS vk200 choke MVM010W MVM010 PDF

    U430

    Abstract: IFN5564 IFN5566 U309 VCR2N IFN5565 J308 J309 J310 U308
    Text: Databook.fxp 1/13/99 2:09 PM Page F-26 F-26 01/99 NJ72 Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C


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    IFN5564, IFN5565 IFN5566 U430 IFN5564 IFN5566 U309 VCR2N IFN5565 J308 J309 J310 U308 PDF

    TRANSISTORS 132 GD

    Abstract: No abstract text available
    Text: J308 thru J310* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit D rain-S ource V o ltag e V DS 25 Vdc G ate-Source V o ltage V GS 25 Vdc Forw ard Gate C u rrent >GF 10 m A dc Total Device D issipation Cw T a = 25°C Derate above 25°C


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    O-226AA) TRANSISTORS 132 GD PDF

    j310 replacement

    Abstract: BSD211 BFW12 BFW10 BSV79 bf245a-c BF246C 2N4092 2n4393 replacement bfw11
    Text: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION


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    2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4416 2N4416a 2N4856 2N4857 j310 replacement BSD211 BFW12 BFW10 BSV79 bf245a-c BF246C 2n4393 replacement bfw11 PDF

    BSV81

    Abstract: j310 replacement bfw11 j310 equivalent BSD211 BSV80 BSD215 BFW10 bfw10 transistor J310
    Text: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION


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    2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4416 2N4416a 2N4856 2N4857 BSV81 j310 replacement bfw11 j310 equivalent BSD211 BSV80 BSD215 BFW10 bfw10 transistor J310 PDF

    motorola U310

    Abstract: j310 fet fet j310 FET U310 U310 MOTOROLA J309 U310 fet U309 J308 J310
    Text: MOTOROLA SC { DIODES/OPTOJ 6367255 MOTOROLA SC 34 D iT|t:3b72S5 D IO D E S /O P T O 34C O D B f l O 1! ? 38047 h Q T * i I - IS ' FIELD-EFFECT TRANSISTORS DICE (continued) UC310 DIE NO. UNE SOURCE — DFM145 This die provides performance equal to or better than that of


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    UC310 DFM145 motorola U310 j310 fet fet j310 FET U310 U310 MOTOROLA J309 U310 fet U309 J308 J310 PDF

    7.1 Channel audio amplifier

    Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_


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    BFW13 BFW12 BFW11 BFW10 BF245A BF245B BF245C BF256A BF256B BF545A 7.1 Channel audio amplifier amplifier audio BFT46 BF861A n channel audio BF410C BF512 transistors BFW10 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel MOSFET Transistors Part No. Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Part No. MOSFET Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Package Bulk/Reel BVDSS V ID(ON)(A) RDS(ON)(Ω) BVDSS(V)


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    2N7000 2N7000A IRF510 IRF610 IRF620 IRF624 IRF630 IRF633 IRF634 IRFZ14 PDF

    motorola U310

    Abstract: DFM145 U310 MOTOROLA
    Text: MOT OROL A SC Im 5F |b3t> 7S S 5 0030 047 b í DIODES/OPTO> t 6367255 MOTOROLA SC DIODES/OPTO 3^c 38047 T " 1( FIELD-EFFECT TRANSISTORS DICE (continued) ~ Q 2S~ UC310 DIE NO. LINE SOURCE — DFM145 This die provides performance equal to or better than that of


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    DFM145 UC310 motorola U310 DFM145 U310 MOTOROLA PDF

    2n3819 field-effect transistors

    Abstract: MPF102 MMBF-5457 bf245b
    Text: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457


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    2N3819 2N5457 2N5458 BF245A BF245B BF256A 2N5460 2N5461 2N5462 O-226AA, 2n3819 field-effect transistors MPF102 MMBF-5457 PDF