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    J3 IC Search Results

    J3 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    J3 IC Price and Stock

    onsemi MICROFJ-30035-TSV-TR

    Photodiodes J-SERIES 3MM 35U TSV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MICROFJ-30035-TSV-TR 5,351
    • 1 $23.39
    • 10 $22
    • 100 $17.38
    • 1000 $15.1
    • 10000 $15.1
    Buy Now

    Microchip Technology Inc PIC24FJ32GB002-I/ML

    16-bit Microcontrollers - MCU 16-bit16 MIPS 32KB Flash 8KB RAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC24FJ32GB002-I/ML 2,737
    • 1 $4.25
    • 10 $4.07
    • 100 $3.53
    • 1000 $3.52
    • 10000 $3.52
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    Microchip Technology Inc PIC24FJ32GA002-I/SS

    16-bit Microcontrollers - MCU 32KB Flash 8192bytes RAM 21 I/O
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC24FJ32GA002-I/SS 2,729
    • 1 $3.31
    • 10 $3.31
    • 100 $2.74
    • 1000 $2.73
    • 10000 $2.73
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    Microchip Technology Inc PIC24FJ32GA004T-I/ML

    16-bit Microcontrollers - MCU 32KB Flash 8192bytes-RAM 35I/O
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC24FJ32GA004T-I/ML 2,109
    • 1 $3.98
    • 10 $3.98
    • 100 $3.3
    • 1000 $3.3
    • 10000 $3.3
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    Microchip Technology Inc PIC24FJ32GP202-I/MV

    16-bit Microcontrollers - MCU 16-bit, 16 MIPS, 32KB ECC Flash, 8KB RAM, XLP, 28-pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PIC24FJ32GP202-I/MV 1,220
    • 1 $1.73
    • 10 $1.72
    • 100 $1.48
    • 1000 $1.48
    • 10000 $1.47
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    J3 IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DB3 C118

    Abstract: db3 c113 DB3 C144 LED_RED 103308-1 DB3 c112 CC2420 J2-17 M30280F J416
    Text: 5 4 3 C20 0.22uF 2 1 DVDD_5.0V Power Source Select U6 FoUSB_PWR 5 C18 6 C19 2.2uF + REG711-5.0 C15 0.01uF D5 R14 CC_CS CC_CLK CC_MISO CC_MOSI 4 BYPASS GND 2 LDO_OUT J3-3 J3-2 J3-1 J2-20 J2-11 J2-10 J2-9 J2-8 LP2992AIM5-3.3 680 ICD_BUSY ICD_CLK ICD_IN ICD_OUT


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    REG711-5 J2-20 J2-11 J2-10 LP2992AIM5-3 J1-20 RS232 P70/TxD2/SDA/TA0out P71/RxD2/SCL/TA0in/CLK1 P72/CLK2/TA1out/V/RXD1 DB3 C118 db3 c113 DB3 C144 LED_RED 103308-1 DB3 c112 CC2420 J2-17 M30280F J416 PDF

    TE28F640J3C-120

    Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
    Text: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current


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    256-Mbit 28F256J3, 28F128J3, 28F640J3, 28F320J3 TE28F640J3C-120 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C PDF

    DP5Z1MM8NKH3

    Abstract: 00FIH
    Text: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’


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    200ns, 30A189-01 50-pin DP5Z1MM8NKH3 00FIH PDF

    DP5Z1MM16PH3

    Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
    Text: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’


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    1Mx16, 200ns, 30A162-21 DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 50-pin 16-Megabits DP5Z1MM16PY DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 DP5Z1MM16PH3 DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3 PDF

    CD075014 2X5

    Abstract: CD075014 ATTiny23V PL-326 atmel 0409 680R MBR0520L NC7SZ57P6X STK600 C4022
    Text: 5 4 3 2 1 J1 and J2 goes down to the mother board. ATTiny23U / ATTiny43U Routing&Socket card SILK: USAGE: BOOST regulator: open Vtarget jumper on mainboard short J8 strap wire from mainboard Vtarget pin1 to J3 Vbat pin 1 w/o BOOST regulator short J3 (Vbat)


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    ATTiny23U ATTiny43U YMJ-02-O-BK CD075014 652D0202211-001 STK600 CD075014 2X5 ATTiny23V PL-326 atmel 0409 680R MBR0520L NC7SZ57P6X C4022 PDF

    CDS0892

    Abstract: QQ-S-571 SN63
    Text: F E AT U R E S MODEL NO. CDS0892 1550 - 1850 MHz 4 dB Gain Non-Reflective TTL Driver Replaceable SMA Connectors HDI Connectorized SP2T w/Amp 1.00 ±.03 PART IDENTIFICATION .104 X .304 SLOT THRU TYP J3 .25 J1 SWITCH SP2T J2 .750 J1 J3 AMPLIFIER J2 +15V CONT


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    CDS0892 QQ-S-571 CDS0892 SN63 PDF

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    Abstract: No abstract text available
    Text: F E AT U R E S MODEL NO. CAM09120 430 - 470 MHz Power Out +64 dBM Gain 21 dB Efficiently 57% Duty Cycle 15% J1 Ou tlin e HPA PART IDENTIFICATION .83 (J2) (J3) PEAK DET PHASE ADJ 5.06 J2 OUTPUT AMP J1 INPUT 3.44 2.54 2.20 1.03 1.00 J3 SIGNAL 2X 4.50 1.14


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    CAM09120 Ban470 PDF

    Untitled

    Abstract: No abstract text available
    Text: LDWER ROW ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATID P1-P2-P3 i (J1 -J2 ) (P 4 -P 5 -P 6 ) i C J3 -J6 ) 2.0 INDUCTANCE CP6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 (WITH J6 AND J3 SHORT) P3-P1 (WITH J2 AND J1 SHORT) 4.0 INTERVINDING CAPACITANCE <P6,P5,P4) TO <J6 ,J3 )


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    350uH CT720183 SI-30084 PDF

    Untitled

    Abstract: No abstract text available
    Text: LDVER RDW ELECTRICAL SPECIFICATIONS* l.D TURNS RATIO P 1-P E-P3 i (J1 -J2 ) CP 4-P 5 -P 6) ; (J3 -J6 > 2.0 INDUCTANCE <P6-P4> (P3-PL) 3.0 LEAKAGE INDUCTANCE P 6 -P 4 (WITH J6 AND J3 SHDRT) P3-P1 (WITH J2 AND JL SHDRT) 4.0 INTERW INDING CAPACITANCE CP6.P5.P4) TD (J6,J3)


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    350uH CT720112 PDF

    30089

    Abstract: No abstract text available
    Text: LDWER RDW ELECTRICAL SPECIFICATIONS« 1.0 TURNS RATID P1-P2-P3 i (J 1 -J2 ) (P 4 -P 5 -P 6 ) i C J3 -J6 ) 2.0 INDUCTANCE <P6-P4> (P3-P1) 3.0 LEAKAGE INDUCTANCE P 6-P4 (WITH J6 AND J3 SHORT) P3-P1 (WITH J2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P5,P4) TD < J6,J3)


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    1000P 350uH TN000422X0 30089 PDF

    C1384

    Abstract: C1143
    Text: ELECTRICAL SPECIFICATIONS 1.0 TURNS RATIO P 6 -P 8 -P 3 i ( J 6 - J 3 ) (P2 -P 7 -P 1 ) i (J2 -J1 ) 2.0 INDUCTANCE <P6-P3)=<J6-J3) (P2-P1) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 (WITH J6 AND J3 SHDRT) P2-P1 (WITH J2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P3) TD <J6,J3>


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    200uH 1500VAC C2159D L94--VO C1384 C1143 PDF

    50MHZ

    Abstract: No abstract text available
    Text: S c h e m a t ic : E le c t r ic a l Isolation Voltage: S p e c if ic a t io n s : 1500Vac J1.J2 to (P1.P3) Isolation Voltage: 1500Vac (J3.J6) to (P4.P6) Turns Ratio: (PB-P5-F4):{J6-J3)=1,41 CT:1 CT±3% Turns Ratio: (P3-P2-P1):(J2-J1)=1CT:1CT±3% OCL: J3 -J6 : 350uH Min @100KHz 1D0mV SmADC


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    D00pF XF973D5â 1500Vac 350uH 100KHz 100mV 00MHz) 50MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: LOWER ROW ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: P1 - P2 - P 3 : (J1 - J2 ) (P4 - P5 - P 6 ) : (J3 - J6 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: (P6,P5,P4) TO (J6 ,J3 ) (P3,P2,P1) TO (J2 ,J1 )


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    1000PF, 350uH 100KHz, 10OKHz, UNLE55 CT720114 SI-30041 PDF

    1117 S Transistor

    Abstract: TOSHIBA bat Transistor b 1117
    Text: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode


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    GT5J311 GT5J311 30//s 1117 S Transistor TOSHIBA bat Transistor b 1117 PDF

    600-8-2

    Abstract: IT220
    Text: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P6 - P5 - P4 : (J6 - J3 ) (P3 - P2 -P1 ) : (J2 - J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 (P6 -P4 ) (P3 -P1 ) LEAKAGE INDUCTANCE: P6-P4 (WITH J6 AND J3 SHORT)


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    350uH 100KHz, 600-8-2 IT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 INDUCTANCE: P 6-J6=P3-J3 2 .0 DC RESISTANCE: P 6 - J 6 P 3-J3 P 2-J2 P 1-J1 3.0 3.0 COMMON MODE ATTENUATION: FREQUENCY M H z ; P 2-J2=P 1 T Y P IC A L 1 8 5 17 20 23 70 25 200 22 500 11 -aS«JUUL/


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    SI-20059 CT640147X0 PDF

    Magjack Bel Stewart RJ45

    Abstract: No abstract text available
    Text: 1CT:1CT 75 Iji ~lauuuJ~ js m m _ |J2 |J3 1CT:1CT © |J4 |J5 P6 |J6 75 |J7 75 IJ8 1000pF, 2KV SHIELD NDTES 1,0 P IN S WITHGUT EL E C T R IC A L CDNNECTIDN ARE DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 - P 5 - P 6 : (J3 -J6 ) ( P 1 - P 3 - P 2 ) : (J1 -J2 )


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    1000pF, 350uH 100KHz, SI-70008 Magjack Bel Stewart RJ45 PDF

    IC24011-0101T

    Abstract: No abstract text available
    Text: ELECTRICAL SPECIFICATIONS 25JC unless otherwise noted: 350uH min., 100kHz, lOOmV, 8mADC, J1-J2; J3-J6, Lp. 1500Vrms for 1 minute between P l-Jl tie P1+P4 . (P1-P3):(J1-J2) = 1:1, ± 2%. (P4-P6):(J3-J6) = 1:1, ± 2%. INSERTION LOSS: -l.OdB max., 1MHz - 100MHz.


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    350uH 100kHz, 1500Vrms 100MHz. -18dB 30MHz. -10dB 45MHz. -14dB 6011Hz. IC24011-0101T PDF

    MAGJACK rj45 connector

    Abstract: No abstract text available
    Text: 1CT i 1CT J1 J2 J3 J4 J5 J6 J7 J8 TX+ TXRX+ RX- lOOOpF, 2 K V NDTES ELECTRICAL SPECIFICATIONS: 1,0 P IN S WITHDUT EL E C T R IC A L CDNNECTIDN ARE □MITTED, 1.0 TURNS RATIO: P 4 - P 5 - P 6 : (J3 -J6 ) ( P 3 - P 2 - P 1 ) : (J1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3%


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    350uH 100KHz, SI--70009 MAGJACK rj45 connector PDF

    1230A1

    Abstract: No abstract text available
    Text: 16 Megabit FLASH EEPROM D E N S E - P A C M I C K OS V S T M S \í DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 AD VAN CED IN FO RM ATIO N DESCRIPTION: The DP5Z1MM16PY/Í3/H3/J3/DP5Z1MW16PA3 "SLCC" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'


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    DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 DP5Z1MM16PY/ 3/H3/J3/DP5Z1MW16PA3 50-pin 16-Megabits DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 120ns 150ns 200ns 30A162-21 1230A1 PDF

    SI-30005

    Abstract: No abstract text available
    Text: LDWER ROW ELECTRICAL SPECIFICATIONS« 1.0 TURNS RATID P1-P2-P3 i (J1-J2) (P 4 -P 5 -P 6 ) i CJ3-J6) 2.0 INDUCTANCE (P6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 (WITH J6 AND J3 SHORT) P3-P1 (WITH J2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P5,P4) TD <J6,J3)


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    1000PF, 350uH Sl-30005 SI-30005 PDF

    j1 3003

    Abstract: No abstract text available
    Text: 10 0 0 p F 1 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 (P 3- P 2- P 1 : (J6- J3 : (J2- J1) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J6 - J3 )= (J2 - J1 ) (P 6 - P 4 ) (P 3 - P 1 )


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    350uH 10OKHz, CT720034X1 j1 3003 PDF

    TMS34061FNL

    Abstract: lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625
    Text: SM J 3 4 0 1 0 GRAPHICS SYSTEM PROCESSOR NOVEMBER 1 98 8 - • Military Temperature . . . - 5 5 ° C to 12 5°C • Instruction Cycle Time: 200 ns . . . S M J3 4010-40 160 ns . . . S M J3 4010-50 REVISED SEPTEMBER 1989 GB PACKAGE 68-PIN GRID ARRAY TOP VIEW


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    32-Bit 128-Megabyte 16-Bit 64-Bit 256-Byte TMS34061FNL lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1CT : 1CT J1 TX+ J2 TX- J3 RX+ J4 J5 J6 RX- J7 J8 lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 4 - P 5 - P 6 : (J3 -J6 ) ( P 3 - P 2 - P 1 ) : (J1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 1,0 PINS WITHDUT ELECTRICAL CONNECTION ARE OMITTED,


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    350uH 100KHz, 125-C/90SECS. 230-C/90 PDF