Diode r4d
Abstract: j112 fet J112 J112 jfet application note jfet J111 transistor
Text: MOTOROLA Order this document by J112/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35
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J112/D
226AA)
Diode r4d
j112 fet
J112
J112 jfet
application note jfet J111 transistor
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buz90af
Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391
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2SK192
2SK212
2SK241
BF960
BF961
BF964
BF966S
BF981
OT103
BF996
buz90af
P7NB60FP
P4NB80FP
P6N60
P5NB60FP
2SK30A
buz91a
2SK2645
BUZ100
2SK163
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J113 equivalent
Abstract: J112 J111 J113 "Field-Effect Transistors" J112 equivalent Field-Effect Transistors J-112
Text: DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors
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MAM042
J113 equivalent
J112
J111
J113
"Field-Effect Transistors"
J112 equivalent
Field-Effect Transistors
J-112
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J112
Abstract: J113 J111 transistor J112 Scans-00946
Text: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features
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711002b
0Clb7cl75
3150S2
J112
J113
J111
transistor J112
Scans-00946
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MMBFJ111
Abstract: J111 6R SOT23 J112 TO92
Text: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.
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MMBFJ111
MMBFJ112
SB51338
MMBFJ113
J111
6R SOT23
J112 TO92
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Untitled
Abstract: No abstract text available
Text: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.
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MMBFJ111
MMBFJ112
SB51338
MMBFJ113
MMBFJ111
MMBFJ112
SB51338
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j111
Abstract: No abstract text available
Text: 711002b QGbV^VS 7 ci3 J111 J112 J113 IPHIN N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. Features • High speed switching
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711002b
110a2b
1550S2
j111
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Untitled
Abstract: No abstract text available
Text: 7110flEb □ G b ? c17S 7T3 « P H I N J in J112 J113 y V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.
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7110flEb
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2SJ112
Abstract: 2SJ112-TYPIC j112 fet
Text: H I T A C H I / í O P T OE LE CT RO NI C S} 73 HITACHI ! .DP IÖLLEC IKUN ICS DE.[LlLllit3SD5 P O D ^ a □ 73C 09948 D • z 3 2S J112 SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 398
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motorola JFET 2N3819
Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc
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226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
motorola JFET 2N3819
BF245 application note
BC237
transistor TO-92 bc108
N CHANNEL JFET 2N3819
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J113
Abstract: J112 J111 DU240
Text: • 1^53=131 DÜ240Gb TTT « A P X J111 J112 J113 b7E T> N AMER PHILIPS/DIS CRET E N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.
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240Gb
J113
J112
J111
DU240
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PMBFJ111
Abstract: No abstract text available
Text: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23
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0024DS2
J111/P
J112/
FJ113
PMBFJ111)
PMBFJ112)
PMBFJ113)
DD24D55
PMBFJ111/PMBFJ112/PMBFJ113
PMBFJ111
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Untitled
Abstract: No abstract text available
Text: • bbS3=131 002400b TTT « A P X jm J112 b7E T> N APIER P H IL I P S/ D I SC R ET E ;v J113 N - C H A N N E L S IL IC O N F I E L D - E F F E C T T R A N S IS T O R S Symmetrical silicon n-channel junction F E T s in plastic TO-92 envelopes. They are intended for
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002400b
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siliconix - j201
Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
Text: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,
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AN103
SST112
2N4392
2N4393
SST/J113
2N4392,
SST/J112
2N4393,
SST/J113
siliconix - j201
j201 jfet
2N4392
jfet cascade
SST4119
2N4341
AN103
J112
J202
SST112
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FET J202
Abstract: transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392
Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and
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AN103
PN4117A
SST4117
2N4117A
PN4118A
SST4118
2N4118A
PN4119A
SST4119
2N4119A
FET J202
transistor j201
high impedance current sources -rs
2N4393
j112 fet
siliconix fet data book
Transistor J304 Siliconix
2n Siliconix FET
siliconix fet
2N4392
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FET J202
Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet
Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and a
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AN103
PN4117A
SST4117
2N4117A
PN4118A
SST4118
2N4118A
PN4119A
SST4119
2N4119A
FET J202
siliconix fet data book
J113 equivalent
CR180
datasheet j201 jfet
J201 equivalent
2N4392
2N4393
J112
j112 fet
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Untitled
Abstract: No abstract text available
Text: M A XIM U M RATINGS Symbol Value Unit Drain-Gate Voltage Vd G -3 5 Vdc Gate-Source Voltage Vg S -3 5 Vdc 'g 50 mA Pd 350 2.8 mW m w rc Tl 300 °C Tj> Tgtg - 65 to +150 °C Rating Gate Current Total Device Dissipation @ Derate above 25°C = 25°C Lead Temperature
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VNC2-32
Abstract: V2DIP2-32 VNCL2-32Q
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP2-32
VNC2-32Q
VNCL2-32Q
895-V2DIP2-32
V2DIP2-32
VNC2-32
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VNC2
Abstract: No abstract text available
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP2-32
VNC2-32Q
V2DIP2-32
VNCL2-32Q
VNC2
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VNC2-32
Abstract: u1M code vnc2 ftdi spi example
Text: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-32
VNC2-32Q
V2DIP1-32
VNC2-32
u1M code
vnc2
ftdi spi example
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IO24
Abstract: VNC2-48 Vinculum II
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-48
VNC2-48
V2DIP1-48
IO24
Vinculum II
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Untitled
Abstract: No abstract text available
Text: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP1-32
VNC2-32Q
V2DIP1-32
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V2DIP2-32
Abstract: usb flash drive circuit diagram Vdip1 VNC2-32
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom
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V2DIP2-32
VNC2-32Q
V2DIP2-32
VNCL2-32Q
usb flash drive circuit diagram
Vdip1
VNC2-32
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET C h o p p e r T ra n sisto r N-Channel — Depletion M AXIMUM RATINGS Rating D ra in -G a te Voltage G a te -S o u rce Voltage Symbol Value Unit VDG -3 5 Vdc VGS -3 5 Vdc Gate Current 'g 50 mAdc Total Device Dissipation @ Ta = 253C
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