Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM1200HE-66S
HVM-2003-A
|
diode lak
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM400DG-66S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM400DG-66S
HVM-2012
31-Jan
diode lak
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM1200HE-66S
HVM-2003-A
300A/Â
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM400DG-66S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM400DG-66S
HVM-2012
800A/Â
31-Jan
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number
|
Original
|
PDF
|
RM600HE-90S
HVM-2006-A
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number
|
Original
|
PDF
|
RM600HE-90S
HVM-2006-A
600A/Â
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R E I.Umezaki M.Yamamoto V Nov.-18-2008 Nov.14.2002 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number RM1800HE-34S
|
Original
|
PDF
|
RM1800HE-34S
HVM-2001-A
|
diode UF 2010
Abstract: diode 2200
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 27-Sep.-2006 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DG-66S
|
Original
|
PDF
|
27-Sep
RM1200DG-66S
HVM-2010-A
31-Jan
diode UF 2010
diode 2200
|
rm300DG
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi A K.Kurachiv R E I.Umezaki I.Umezaki V 11-May-2007 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM300DG-90S 2. Structure
|
Original
|
PDF
|
11-May-2007
RM300DG-90S
HVM-2011-A
31-Jan
rm300DG
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E H.Yamaguchi V 10-Apr.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900DB-90S 2. Structure Flat base type Insulated package, Cu base plate
|
Original
|
PDF
|
10-Apr
RM900DB-90S
HVM-2018
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E H.Yamaguchi V 10-Apr.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900DB-90S 2. Structure Flat base type Insulated package, Cu base plate
|
Original
|
PDF
|
10-Apr
RM900DB-90S
HVM-2018
600A/Â
|
RM600DG-130S
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM600DG-130S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM600DG-130S
HVM-2016
31-Jan
RM600DG-130S
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM600DG-130S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM600DG-130S
HVM-2016
000A/Â
31-Jan
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900HC-90S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM900HC-90S
HVM-2017
300A/Â
31-Jan
|
|
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 8-May-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DB-66S 2. Structure Flat base type Insulated package, Cu base plate
|
Original
|
PDF
|
8-May-2008
RM1200DB-66S
HVM-2019
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM200DG-130S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM200DG-130S
HVM-2014
31-Jan
|
3300A
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900HC-90S 2. Structure Flat base type Insulated package, AlSiC base plate
|
Original
|
PDF
|
RM900HC-90S
HVM-2017
31-Jan
3300A
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 27-Sep.-2006 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DG-66S
|
Original
|
PDF
|
27-Sep
RM1200DG-66S
HVM-2010-A
400A/Â
31-Jan
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi A K.Kurachiv R E I.Umezaki I.Umezaki V 11-May-2007 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM300DG-90S 2. Structure
|
Original
|
PDF
|
11-May-2007
RM300DG-90S
HVM-2011-A
100A/Â
31-Jan
|
Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 11-Oct.-2005 Nov.-18-2008 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number
|
Original
|
PDF
|
11-Oct
RM1200DB-34S
HVM-2008-A
|
3642G
Abstract: MGFC44V3642
Text: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2
|
OCR Scan
|
PDF
|
MGFC44V3642
MGFC44V3642
-42dBc
digita27
90GHz
25deg
Dec-98
3642G
|
Untitled
Abstract: No abstract text available
Text: nnmary bpec. MITSUBISHI LSIs Some of contents are subject to change without notice MH4V7245CWJ-6,-7 HYPER PAGE MODE 301989888-BIT 4194304-BIT BY 72-BIT DYNAMIC RAM PIN CONFIGURATION DESCRIPTION The MH4V7245CWJ is 4194304-word x 72-bit dynamic ram module.
|
OCR Scan
|
PDF
|
MH4V7245CWJ-6
301989888-BIT
4194304-BIT
72-BIT)
MH4V7245CWJ
4194304-word
72-bit
MIT-DS-0038-0
27/NO
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> pBEUW"N^ i M G FC 44V 3642 tf*'- ' 3 .6 ~ 4 .2 G H z BAND 2 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 4 V 3 6 4 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 3 . 6 — 4 . 2
|
OCR Scan
|
PDF
|
|
4410D
Abstract: F4410D
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series j SUPER LOW NOISE InGaAs HEMT 1-
|
OCR Scan
|
PDF
|
F4410D
4410D
MGF4416D
MGF4417D
MGF4418D
|