mek75
Abstract: VMO6
Text: 3URGXFW &KDQJH 1RWLFH 3&1 1R Customer: DOO IXYS product type: 3DFNDJH 72 Description of change: LQWURGXFWLRQ RI QHZ OHDGIUHH SDVWH VROGHULQJ SURFHVV LQ PRGXOH DVVHPEO\ Reason for change: OHDGIUHH VROGHULQJ LPSURYHG WKHUPDO SHUIRUPDQFH E\ EHWWHU GLH DWWDFK TXDOLW\
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14F12
VMK90,
VMK165
VMM45
VMO40,
VMO60
MCC21,
MCC26,
MCC44,
MCC56,
mek75
VMO6
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VMO 440
Abstract: 650-01F 1200NC VMO 550-01F ixys VMO 440 motor IG 2200 19 x 000 15 r
Text: MOSFET Modules Contents VDSS ID cont RDS(on)max max. TC = 25°C TC = 25°C V A mΩ Ω 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 200 TO 240 Page VMK 90-02 T2 C3-6 VMM 85-02F C3-10 1) C3-14 C3-18 450 4.6 VMO 450-02F 500 4.2 VMO 500-02F 2)
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550-01F
650-01F
85-02F
C3-10
C3-14
C3-18
450-02F
500-02F
380-02F
400-02F
VMO 440
650-01F
1200NC
VMO 550-01F
ixys VMO 440
motor IG 2200 19 x 000 15 r
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Untitled
Abstract: No abstract text available
Text: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kΩ 200 V VGS Continuous ±20 V VGSM Transient
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90-02T2
O-240
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Untitled
Abstract: No abstract text available
Text: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kW 200 V VGS Continuous ±20 V VGSM Transient ±30
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90-02T2
O-240
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Untitled
Abstract: No abstract text available
Text: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kW 200 V VGS Continuous ±20 V VGSM Transient ±30
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90-02T2
O-240
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Untitled
Abstract: No abstract text available
Text: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 1 2 3 VDSS = 200 V ID25 = 83 A Ω RDS on = 25 mΩ 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kΩ
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90-02T2
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to240
Abstract: 165-007T TO-240
Text: Advanced Technical Information VMK 165-007T VDSS = 70 V Dual Power MOSFET Module ID25 = 165 A RDS on = 7 mW 4 5 Common-Source connected N-Channel Enhancement Mode Symbol Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 6.8 kW 1 2 3 6 7
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165-007T
O-240
to240
TO-240
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information VMK 165-007T VDSS = 70 V Dual Power MOSFET Module ID25 = 165 A Ω RDS on = 7 mΩ 4 5 Common-Source connected N-Channel Enhancement Mode Symbol Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 6.8 kΩ
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165-007T
O-240
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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Untitled
Abstract: No abstract text available
Text: VMK 90-02T2 Dual Power MOSFET Module VDSS Id25 = 200 V “ 83 A ^ D S o n “ 25 m Q Common-Source connected N-Channel Enhancement Mode Sym bol Test C onditions vv DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 6.8 kß 200 V VGS V GSM
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90-02T2
O-240
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90-02T2
Abstract: ixys vmk
Text: l a i x Y S VMK 90-02T2 Dual Power MOSFET Module V,DSS I d 25 RDS on = 200 V = 83 A = 25 mQ Common-Source connected N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 200 V Voon Tj = 25°C to 150°C; FtGS = 6.8 k£2
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90-02T2
O-240
T0-240
90-02T2
ixys vmk
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240AA
Abstract: IXTH7P50 Complementary MOSFETs ixys vmk
Text: il û n MOSFET Modules N-Channel Enhancement Mode Type V oss max. os «nk 1* VMO VMK VMM C ityp. typ. V max. °«, max. *^hJ8 max. pF pF ns nC K/W 4200 135 600 160 0.8 9200 570 400 450 53000 340 600 2300 Package style ' D max. See outlines on page 35/36 Tc = 25-C
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15-045C
15-05C
90-02T2
400-02F
O-240AA
10P50
11P50
O-247
240AA
IXTH7P50
Complementary MOSFETs
ixys vmk
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650-01F
Abstract: DIXYS 8502F c310 vmk 90-02
Text: DIXYS _ MOSFET Modules v p ^Dfconl DSS Diijon) Contents 0 0} ' Page . max. Tc = 25 °C Tc = 25 °C V A n 100 590 0.0021 > VMO 550-01F C3-2 690 0.0018 >• VMO 650-01F C3-4 200 85 0.025 85 0.025 385 0.0046 420 0.0042 C3-6 VMK 90-02 T2 C3-10
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85-02F
550-01F
650-01F
C3-10
400-02F
C3-14
C3-18
DIXYS
8502F
c310
vmk 90-02
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IXTH7P50
Abstract: No abstract text available
Text: VM M MOSFET Modules VM K N-Channel Enhancement Mode V DSS max. B *D25 Tc = 25°C A DS{on max. Te * 25°C mû ciM Cr8S typ. typ. trr typ. typ. Q0 ^thJS max. nF nF ns nC Package style K/W PD max. T > 2 5 “C W Fig. No. Type TJM = 150°C ► New ► VMM 600-007F *
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600-007F
650-01F
550-01F
650-01F
90-02T2
85-02F
380-02F
400-02F
T0-240AA
10P50
IXTH7P50
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21N50
Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
Text: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200
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12N50A
21N50
24N50
15N60
20N60
6N80A
11N80
13N80
6N90A
10N90
6N80
MOSFET 11N80
PAGE-42
K 15N60
IXTM21N50
IXTH7P50
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Untitled
Abstract: No abstract text available
Text: ixYS VMK 90-02T2 Dual Power MOSFET Module V DSS I D25 = 200 V = 90 A RDS on = 25 m fí Common-Source connected N-Channel Enhancement Mode Avalanche Rated TO-240 AA Preliminary data Maximum Ratings Symbol Test Conditions VDSS Tj = 25°C to 150°C 200 V VDGR
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90-02T2
O-240
T0-240
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