diode B4
Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1
Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B
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O-263
O-247
O-268
STO-227
O-220
20N60
35N60
20N120
20N120
diode B4
ixdn75n120
STO-227
IGBT D-Series
IXDH20N120AU1
20N60B
30N120
55N120
30N120D1
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ixys ixdn 75 n 120
Abstract: 75N120 IXDN75N120 160mJ
Text: IXDN 75N120 High Voltage IGBT VCES = 1200 V = 150 A IC25 VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Maximum Ratings E = Emitter ①, G = Gate, Symbol Conditions VCES TJ = 25°C to 150°C 1200
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75N120
OT-227
E153432
IXDN75N120
ixys ixdn 75 n 120
75N120
IXDN75N120
160mJ
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75N120
Abstract: No abstract text available
Text: IXDN 75N120 High Voltage IGBT VCES = 1200 V IC25 = 150 A VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kW
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75N120
OT-227
E153432
IXDN75N120
75N120
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35N60
Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n
Text: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220
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O-263
O-247
20N60
35N60
STO-227
O-268
247TM
O-220
20N120
30N120
75N120
ixys ixdn 75 n 120
IXDN75N120
IXDH30N60
55N120
20N60 to220
ixdn55n
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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75n120
Abstract: No abstract text available
Text: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ
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75N120
OT-227
E153432
D-68623
75n120
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75N120A
Abstract: 75N120 IXDN75N120A 1TM4 MI1200 15i2 0504N
Text: □ IXYS IXDN 75N120A High Voltage IGBT V CES 1200 V ^C25 120 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES ^ = 25°C to 150°C 1200 V V CGR ^ = 25°C to 150°C; RGE = 1 M£i 1200 V V GES Continuous
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75N120A
OT-227
75N120
IXDN75N120A
1TM4
MI1200
15i2
0504N
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75N120
Abstract: 0504N IXDN75N120A
Text: □IXYS IXDN 75N120A High Voltage IGBT V CES ^C25 V CE sat typ 1200 V 120 A 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 1200 V mini BLOC, SOT-227 B
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75N120A
OT-227
75N120
0504N
IXDN75N120A
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BTS 3900 a
Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device
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T-227B
BTS 3900 a
BTS 3900
12N60
BTS 3900 l
35N120U1
24n60
52N60A
IXSH 35N120AU1
35n120u
35N120AU1
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