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    35N60 Search Results

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    35N60 Price and Stock

    Flip Electronics FCA35N60

    MOSFET N-CH 600V 35A TO-3PN
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    DigiKey FCA35N60 Tube 12,376 200
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    STMicroelectronics STP35N60DM2

    MOSFET N-CH 600V 28A TO220
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    DigiKey STP35N60DM2 Tube 1,000 1
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    Avnet Americas STP35N60DM2 Tube 16 Weeks 1,000
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    Mouser Electronics STP35N60DM2
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    Newark STP35N60DM2 Bulk 970 1
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    STMicroelectronics STP35N60DM2 1
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    TME STP35N60DM2 1
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    STMicroelectronics STF35N60DM2

    MOSFET N-CH 600V 28A TO220FP
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    DigiKey STF35N60DM2 Tube 984 1
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    Mouser Electronics STF35N60DM2 935
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    STMicroelectronics STF35N60DM2 935 1
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    TME STF35N60DM2 1
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    Avnet Silica STF35N60DM2 17 Weeks 50
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    Vishay Siliconix SIHP35N60EF-GE3

    MOSFET N-CH 600V 32A TO220AB
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    DigiKey SIHP35N60EF-GE3 Tube 738 1
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    Littelfuse Inc IXKH35N60C5

    MOSFET N-CH 600V 35A TO247AD
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    DigiKey IXKH35N60C5 Tube 369 1
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    Newark IXKH35N60C5 Bulk 300
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    Find more 35N60 price and stock on Findchips.com

    35N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S  D(TAB) Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247 20070625a

    35n60c

    Abstract: ixkp35n60c5m
    Text: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 35N60C5M O-220 20080310a 35n60c ixkp35n60c5m

    IXKH35N60C5

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20090209c IXKH35N60C5

    DSA003710

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247 20070625a DSA003710

    35n60

    Abstract: IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB
    Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 35 A VDSS = 600 V RDS on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


    Original     		PDF 35N60C5 O-247 O-220 20080523a 35n60 IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB

    35N60

    Abstract: 35N60BD1
    Text: IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ


    Original     		PDF 35N60 247TM IXDR30N60BD1 35N60BD1

    Untitled

    Abstract: No abstract text available
    Text: IXDP 35N60 B VCES = 600 V IXDH 35N60 B IC25 = 60 A IXDH 35N60 BD1 VCE sat typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH . G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B Symbol Conditions IXDH 35N60 BD1 Maximum Ratings


    Original     		PDF 35N60 O-247 O-220 IXDH30N60B

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information ID25 = 35 A = 600 V VDSS RDS on max = 0.1 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G


    Original     		PDF 35N60C5 35N60C5 O-247 O-220

    diode B4

    Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1
    Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B


    Original     		PDF O-263 O-247 O-268 STO-227 O-220 20N60 35N60 20N120 20N120 diode B4 ixdn75n120 STO-227 IGBT D-Series IXDH20N120AU1 20N60B 30N120 55N120 30N120D1

    35n60

    Abstract: 35N60 datasheet 35N60BD1 IXDH30N60 IXDH30N60B
    Text: IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE sat typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH . G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B IXDH 35N60 BD1 Symbol Conditions Maximum Ratings


    Original     		PDF 35N60 O-247 IXDH30N60B 35N60 datasheet 35N60BD1 IXDH30N60 IXDH30N60B

    Untitled

    Abstract: No abstract text available
    Text: IGBT with optional Diode IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE sat typ = 2.1 V High Speed, Low Saturation Voltage C G Preliminary Data TO-247 AD C G E G C E IXDH 35N60 B BD1 IXDP 35N60 B IXDH 35N60 Symbol Conditions VCES TJ = 25°C to 150°C


    Original     		PDF 35N60 O-247 35N60 O-220

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20090209c

    Untitled

    Abstract: No abstract text available
    Text: IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE sat typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH . G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B IXDH 35N60 BD1 Symbol Conditions Maximum Ratings


    Original     		PDF 35N60 O-247 IXDH30N60B

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20080310b

    Untitled

    Abstract: No abstract text available
    Text: IXDR 35N60 BD1 VCES = 600 V IC25 = 38 A VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V Features ● ● VCGR TJ = 25°C to 150°C; RGE = 20 kΩ


    Original     		PDF 35N60 247TM IXDR30N60BD1

    35N60

    Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n
    Text: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220


    Original     		PDF O-263 O-247 20N60 35N60 STO-227 O-268 247TM O-220 20N120 30N120 75N120 ixys ixdn 75 n 120 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n

    Untitled

    Abstract: No abstract text available
    Text: 35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		PDF NGTB35N60FL2WG NGTB35N60FL2W/D

    35n60c3

    Abstract: 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c
    Text: 35N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		PDF SPW35N60C3 P-TO247 Q67040-S4673 35N60C3 35n60c3 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c

    35N60CFD

    Abstract: SPW35N60CFD JESD22 Q67045A5053 D219
    Text: 35N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 009-134-A PG-TO247-3-21-41 35N60CFD SPW35N60CFD JESD22 Q67045A5053 D219

    35N60CFD

    Abstract: SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor
    Text: 35N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 35N60CFD SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor

    35n60c3

    Abstract: SPW35N60C3 D219 D219A Q67040-S4673 35N60
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		PDF SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 009-134-A O-247 35n60c3 SPW35N60C3 D219 D219A Q67040-S4673 35N60

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


    OCR Scan     		PDF 20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan     		PDF O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1