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    IXYS Corporation IXYH40N120C3

    IGBTs GenX3 1200V XPT IGBT
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    Mouser Electronics IXYH40N120C3 106
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    Future Electronics IXYH40N120C3 Tube 300
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    TME IXYH40N120C3 1
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    IXYS Corporation IXYH40N120C3D1

    IGBTs XPT 1200V IGBT GenX5 XPT IGBT
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    Mouser Electronics IXYH40N120C3D1
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    TME IXYH40N120C3D1 1
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    Littelfuse Inc IXYH40N120C3

    Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXYH40N120C3
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    Newark IXYH40N120C3 Bulk 300
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    Littelfuse Inc IXYH40N120C3D1

    Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXYH40N120C3D1
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    IXYH40N120C3 Datasheets (2)

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    IXYH40N120C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 70A 577W TO247 Original PDF
    IXYH40N120C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 64A 480W TO247 Original PDF

    IXYH40N120C3 Datasheets Context Search

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    QR30

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXYH40N120C3D1 O-247 IF110 062in. QR30 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IC110 IXYH40N120C3 O-247 40N120C3 PDF

    IXYH40N120C3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXYH40N120C3D1 O-247 IF110 062in. IXYH40N120C3 PDF

    IXYH40N120C3

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH40N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXYH40N120C3 IC110 O-247 062in. 40N120C3 IXYH40N120C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXYH40N120C3D1 O-247 IF110 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH40N120C3D1 O-247 IF110 13/1030A, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYH40N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXYH40N120C3 IC110 O-247 40N120C3 PDF