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    IXYH30N120C3 Search Results

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    IXYH30N120C3 Price and Stock

    IXYS Corporation IXYH30N120C3D1

    IGBT 1200V 66A 416W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH30N120C3D1 Tube 504 1
    • 1 $7.93
    • 10 $7.93
    • 100 $6.32833
    • 1000 $5.86383
    • 10000 $5.86383
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    Mouser Electronics IXYH30N120C3D1 224
    • 1 $7.93
    • 10 $7.93
    • 100 $6.33
    • 1000 $5.86
    • 10000 $5.86
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    TTI IXYH30N120C3D1 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.82
    • 10000 $7.82
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    IXYS Corporation IXYH30N120C3

    IGBT 1200V 75A 500W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH30N120C3 Tube 451 1
    • 1 $5.54
    • 10 $5.54
    • 100 $4.422
    • 1000 $4.09767
    • 10000 $4.09767
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    Mouser Electronics IXYH30N120C3 117
    • 1 $7.88
    • 10 $6.98
    • 100 $6.2
    • 1000 $4.96
    • 10000 $4.18
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    TTI IXYH30N120C3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.46
    • 10000 $5.46
    		Buy Now
    TME IXYH30N120C3 1
    • 1 $10.03
    • 10 $8.37
    • 100 $7.53
    • 1000 $7.53
    • 10000 $7.53
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    IXYH30N120C3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXYH30N120C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 75A 500W TO247 Original PDF
    IXYH30N120C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 66A 416W TO247 Original PDF

    IXYH30N120C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP30N120C3 IXYH30N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXYP30N120C3 IXYH30N120C3 O-220 30N120C3

    Untitled

    Abstract: No abstract text available
    Text: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		PDF IXYP30N120C3 IXYH30N120C3 IC110 O-220 O-247 30N120C3 4N-C91)

    IXYH30N120C3D1

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IXYH30N120C3D1 IC110 O-247 IF110 062in. IXYH30N120C3D1

    IXYP30N120C3

    Abstract: No abstract text available
    Text: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXYP30N120C3 IXYH30N120C3 IC110 O-220 062in. O-220 O-247 30N120C3

    Untitled

    Abstract: No abstract text available
    Text: IXYH30N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


    Original     		PDF IXYH30N120C3D1 IC110 O-247 IF110

    Untitled

    Abstract: No abstract text available
    Text: 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXYH30N120C3D1 O-247 IF110

    12v 30a smps

    Abstract: No abstract text available
    Text: IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXYH30N120C3D1 IC110 O-247 IF110 062in. 12v 30a smps

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		PDF DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ