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    IXXH30N60C3D1 Price and Stock

    IXYS Corporation IXXH30N60C3D1

    IGBT 600V 60A 270W TO247
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    DigiKey IXXH30N60C3D1 Tube 130 1
    • 1 $7.56
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    • 100 $4.67533
    • 1000 $3.87675
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    Mouser Electronics IXXH30N60C3D1 141
    • 1 $7.03
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    • 100 $4.67
    • 1000 $3.87
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    Future Electronics IXXH30N60C3D1 Tube 25 Weeks 300
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    TTI IXXH30N60C3D1 Tube 300
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    TME IXXH30N60C3D1 1
    • 1 $6.55
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    Littelfuse Inc IXXH30N60C3D1

    Transistor, Igbt, 600V, 60A, To-247Ad; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:270W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Littelfuse IXXH30N60C3D1
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    Newark IXXH30N60C3D1 Bulk 1
    • 1 $7.31
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    • 100 $5.83
    • 1000 $4.6
    • 10000 $3.88
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    IXXH30N60C3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXXH30N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 270W TO247 Original PDF

    IXXH30N60C3D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30N60C3D

    Abstract: 30N60C3D1 IXXH30N60 30N60C3 ixxh30n60c3d1
    Text: Advance Technical Information IXXH30N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH30N60C3D1 IC110 O-247 IF110 062in. 30N60C3D1 30N60C3D IXXH30N60 30N60C3 ixxh30n60c3d1 PDF

    30N60C3D

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH30N60C3D1 O-247 IF110 30N60C3D1 30N60C3D PDF

    Untitled

    Abstract: No abstract text available
    Text: IXXH30N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.3V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXXH30N60C3D1 IC110 O-247 IF110 30N60C3D1 PDF