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    IXTY4N60P Search Results

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    IXTY4N60P Price and Stock

    IXYS Corporation IXTY4N60P

    MOSFET N-CH 600V 4A TO252
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    IXTY4N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTY4N60P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TO-252 Original PDF

    IXTY4N60P Datasheets Context Search

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    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS


    Original     		PDF IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P O-263 O-220

    IXTP4N60P

    Abstract: IXTA4N60P IXTU4N60P TO-251 weight IXTY4N60P IXTP4N60
    Text: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS


    Original     		PDF IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P O-263 O-220 IXTP4N60P IXTA4N60P IXTU4N60P TO-251 weight IXTY4N60P IXTP4N60

    4N60P

    Abstract: IXTA4N60P IXTP4N60P IXTY4N60P
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 4N60P O-220 O-263 4N60P IXTA4N60P IXTP4N60P IXTY4N60P