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    IXTY1R4N100P Price and Stock

    Littelfuse Inc IXTY1R4N100P

    MOSFET N-CH 1000V 1.4A TO252
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    DigiKey IXTY1R4N100P Tube 350
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    • 1000 $1.49106
    • 10000 $1.49106
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    Newark IXTY1R4N100P Bulk 350
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    • 100 $2.18
    • 1000 $1.71
    • 10000 $1.53
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    IXYS Corporation IXTY1R4N100P

    MOSFETs 1.4 Amps 1000V 11 Rds
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    Mouser Electronics IXTY1R4N100P
    • 1 $2.99
    • 10 $2.51
    • 100 $2.08
    • 1000 $1.92
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    Future Electronics IXTY1R4N100P Tube 24 Weeks 70
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    • 100 $1.64
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    TTI IXTY1R4N100P Tube 350
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    • 1000 $1.58
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    TME IXTY1R4N100P 1
    • 1 $2.48
    • 10 $2.22
    • 100 $1.77
    • 1000 $1.77
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    IXYS Integrated Circuits Division IXTY1R4N100P

    MOSFET DIS.1.4A 1000V N-CH TO252(DPAK) POLAR SMT
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    Ozdisan Elektronik IXTY1R4N100P
    • 1 $2.50085
    • 10 $2.50085
    • 100 $2.2735
    • 1000 $2.2735
    • 10000 $2.2735
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    IXTY1R4N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTY1R4N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 1.4A TO-252 Original PDF

    IXTY1R4N100P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P

    IXTP1R4N100P

    Abstract: 1R4N100P
    Text: PolarTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ 11Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P 3-08-A IXTP1R4N100P 1R4N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFETs VDSS ID25 IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P = 1000V = 1.4A Ω ≤ 11.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P O-252 1R4N100P 3-08-A

    Untitled

    Abstract: No abstract text available
    Text: IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P PolarTM Power MOSFETs VDSS ID25 = 1000V = 1.4A ≤ 11.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P O-252 O-263 O-220AB 1R4N100P 3-08-A