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    IXTQ69N30 Search Results

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    IXTQ69N30 Price and Stock

    Littelfuse Inc IXTQ69N30P

    MOSFET N-CH 300V 69A TO3P
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    DigiKey IXTQ69N30P Tube 293 1
    • 1 $10.29
    • 10 $10.29
    • 100 $6.50433
    • 1000 $10.29
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    Verical IXTQ69N30P 300 8
    • 1 -
    • 10 $10.0842
    • 100 $10.0842
    • 1000 $10.0842
    • 10000 $10.0842
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    Quest Components IXTQ69N30P 240
    • 1 $14.625
    • 10 $14.625
    • 100 $11.375
    • 1000 $10.4
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    CoreStaff Co Ltd IXTQ69N30P 300
    • 1 $12.143
    • 10 $6.979
    • 100 $6.5
    • 1000 $6.5
    • 10000 $6.5
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    Littelfuse Inc IXTQ69N30PM

    MOSFET N-CH 300V 25A TO3PFP
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    DigiKey IXTQ69N30PM Tube 300
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    • 1000 $4.72727
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    Newark IXTQ69N30PM Bulk 300
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    • 1000 $4.96
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    IXYS Corporation IXTQ69N30P

    MOSFETs 69 Amps 300V 0.049 Rds
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    Mouser Electronics IXTQ69N30P 288
    • 1 $10.24
    • 10 $8.44
    • 100 $6.08
    • 1000 $5.73
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    Newark IXTQ69N30P Bulk 285 1
    • 1 $10.7
    • 10 $9.39
    • 100 $6.76
    • 1000 $5.99
    • 10000 $5.99
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    TTI IXTQ69N30P Tube 300
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    • 1000 $5.73
    • 10000 $5.73
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    TME IXTQ69N30P 1
    • 1 $9.8
    • 10 $7.88
    • 100 $7.09
    • 1000 $6.11
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    IXYS Corporation IXTQ69N30PM

    MOSFETs TO3P 300V 69A N-CH POLAR
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    Mouser Electronics IXTQ69N30PM
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    TTI IXTQ69N30PM Tube 300
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    • 10 -
    • 100 -
    • 1000 $4.91
    • 10000 $4.91
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    IXTQ69N30 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ69N30 IXYS Original PDF
    IXTQ69N30P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF

    IXTQ69N30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTQ69N30PM

    Abstract: IXTQ69N30 ixtq69n30p
    Text: Advance Technical Information IXTQ69N30PM PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 300V = 25A Ω ≤ 49mΩ OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		IXTQ69N30PM 100ms 69N30P 0-16-09-A IXTQ69N30PM IXTQ69N30 ixtq69n30p PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300


    Original     		IXTT69N30P IXTQ69N30P O-268 100ms 69N30P 0-16-09-A PDF

    s69a

    Abstract: IXTQ69N30P IXTT69N30P TO-3P
    Text: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300


    Original     		IXTT69N30P IXTQ69N30P O-268 063in) 100ms 69N30P 0-16-09-A s69a IXTQ69N30P IXTT69N30P TO-3P PDF

    IXTQ69N30

    Abstract: IXTQ69N30P IXTT69N30P 7V60
    Text: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A ≤ 49 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM Continuous


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P IXTQ69N30 IXTQ69N30P IXTT69N30P 7V60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET VDSS ID25 IXTQ69N30PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		IXTQ69N30PM 100ms 69N30P 0-16-09-A PDF

    IXTQ69N30P

    Abstract: IXTT69N30P
    Text: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300


    Original     		IXTT69N30P IXTQ69N30P O-268 063in) 100ms IXTQ69N30P IXTT69N30P 69N30P 0-16-09-A PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF