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    IXYS Corporation IXTQ26N60P

    MOSFET N-CH 600V 26A TO3P
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    TME IXTQ26N60P 1
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    IXTQ26N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ26N60P IXYS PolarHV Power MOSFET Original PDF

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    IXTH26N60P

    Abstract: IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD
    Text: PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V


    Original     		PDF IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS O-247 IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD

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    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V


    Original     		PDF IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS O-247 IXTH26N60P