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    IXTQ200N10T Search Results

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    IXTQ200N10T Price and Stock

    Littelfuse Inc IXTQ200N10T

    MOSFET N-CH 100V 200A TO3P
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    DigiKey IXTQ200N10T Tube 300
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    • 1000 $3.741
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    Newark IXTQ200N10T Bulk 300
    • 1 -
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    • 1000 $3.92
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    IXYS Corporation IXTQ200N10T

    MOSFETs 200 Amps 100V 5.4 Rds
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    Mouser Electronics IXTQ200N10T
    • 1 $7.2
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    • 100 $5.03
    • 1000 $4.99
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    Future Electronics IXTQ200N10T Tube 300
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    • 100 $4.19
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    TTI IXTQ200N10T Tube 300 30
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    TME IXTQ200N10T 14 1
    • 1 $6.34
    • 10 $5.04
    • 100 $4.53
    • 1000 $4.53
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    New Advantage Corporation IXTQ200N10T 200 1
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    • 100 $8.41
    • 1000 $7.85
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    IXYS Integrated Circuits Division IXTQ200N10T

    MOSFET DIS.200A 100V N-CH TO3P TRENCHMV THT
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    Ozdisan Elektronik IXTQ200N10T 300
    • 1 $6.41674
    • 10 $6.41674
    • 100 $5.8334
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    Win Source Electronics IXTQ200N10T 8,000
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    IXTQ200N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ200N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 200A TO-3P Original PDF

    IXTQ200N10T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET VDSS ID25 IXTH200N10T IXTQ200N10T RDS on = 100V = 200A Ω ≤ 5.5mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTH200N10T IXTQ200N10T O-247 200N10T 9-30-08-D PDF

    IXTH200N10T

    Abstract: IXTQ200N10T ixth200n10
    Text: IXTH200N10T IXTQ200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100V = 200A Ω ≤ 5.5mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTH200N10T IXTQ200N10T O-247 200N10T 9-30-08-D IXTH200N10T IXTQ200N10T ixth200n10 PDF

    200N1

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTH200N10T IXTQ200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MW 100 100 V V


    Original     		IXTH200N10T IXTQ200N10T O-247 200N10T 11-03-06-B 200N1 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T PDF