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    Littelfuse Inc IXTQ170N10P

    MOSFET N-CH 100V 170A TO3P
    PCB Symbol, Footprint & 3D Model
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    DigiKey IXTQ170N10P Tube 1
    • 1 $12.24
    • 10 $12.24
    • 100 $10.07433
    • 1000 $6.89049
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    Newark IXTQ170N10P Bulk 300
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    • 1000 $6.54
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    IXYS Corporation IXTQ170N10P

    MOSFETs 170 Amps 100V 0.009 Ohm Rds
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    Mouser Electronics IXTQ170N10P 193
    • 1 $12
    • 10 $11.45
    • 100 $10.28
    • 1000 $8.06
    • 10000 $6.23
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    Verical IXTQ170N10P 181 6
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    Future Electronics IXTQ170N10P Tube 24 Weeks 30
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    • 100 $7.31
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    TTI IXTQ170N10P Tube 300
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    • 1000 $6.14
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    TME IXTQ170N10P 301 1
    • 1 $10.36
    • 10 $8.26
    • 100 $7.42
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    ComSIT USA IXTQ170N10P 3
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    Vyrian IXTQ170N10P 297
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    IXTQ170N10P Datasheets (1)

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    IXTQ170N10P
    		IXYS Discrete MOSFETs: Standard N-channel Types Original PDF

    IXTQ170N10P Datasheets Context Search

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    IXTQ170N10P

    Abstract: IXTK170N10P IXTT170N10P
    Contextual Info: IXTT170N10P IXTQ170N10P IXTK170N10P PolarTM Power MOSFET VDSS ID25 = 100V = 170A ≤ 9mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTT170N10P IXTQ170N10P IXTK170N10P O-268 IXTT170N10P 170N10P 01-07-10-C IXTQ170N10P IXTK170N10P PDF

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT170N10P IXTQ170N10P IXTK170N10P = 100V = 170A ≤ 9mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTT170N10P IXTQ170N10P IXTK170N10P O-268 IXTT170N10P 170N10P 01-07-10-C PDF