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    IXTP7N60PM Search Results

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    IXTP7N60PM Price and Stock

    IXYS Corporation IXTP7N60PM

    MOSFET N-CH 600V 4A TO220AB
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    Quest Components IXTP7N60PM 29
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    IXTP7N60PM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP7N60PM IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 4A TO-220 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol


    Original     		PDF IXTA7N60PM IXTP7N60PM O-220 7N60P 06-17-08-D

    7N60P

    Abstract: IXTP7N60PM
    Text: PolarTM Power MOSFET IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXTP7N60PM O-220 7N60P 06-17-08-D IXTP7N60PM

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTP7N60PM RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXTP7N60PM O-220 7N60P 06-17-08-D