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    IXTP60N10T Price and Stock

    Littelfuse Inc IXTP60N10T

    MOSFET N-CH 100V 60A TO220AB
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    DigiKey IXTP60N10T Tube 286 1
    • 1 $2.71
    • 10 $2.71
    • 100 $1.7889
    • 1000 $1.28434
    • 10000 $1.17425
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    IXYS Corporation IXTP60N10TM

    MOSFET N-CH TO220AB
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    DigiKey IXTP60N10TM Bulk
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    IXYS Corporation IXTP60N10T

    MOSFET MOSFET Id60 BVdass100
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    Mouser Electronics IXTP60N10T 50
    • 1 $2.71
    • 10 $2.18
    • 100 $1.78
    • 1000 $1.22
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    TTI IXTP60N10T Tube 300
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    TME IXTP60N10T 57 1
    • 1 $1.99
    • 10 $1.59
    • 100 $1.44
    • 1000 $1.33
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    New Advantage Corporation IXTP60N10T 234 1
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    IXTP60N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTP60N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A TO-220 Original PDF

    IXTP60N10T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    td 130 62706 f

    Abstract: IXTP60N10T 60N10T IXTA60N10T IXTP60N10
    Text: Preliminary Technical Information IXTA60N10T IXTP60N10T TrenchMVTM Power MOSFET RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VGSM Transient


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    PDF IXTA60N10T IXTP60N10T O-263 O-220) O-220 O-263 O-220 60N10T td 130 62706 f IXTP60N10T 60N10T IXTP60N10

    60N10T

    Abstract: IXTP60N10T IXTP60N10 IXTP60N10TM
    Text: Preliminary Technical Information IXTP60N10TM TrenchMVTM Power MOSFET VDSS ID25 = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


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    PDF IXTP60N10TM O-220 062in. 60N10T 7-08-A IXTP60N10T IXTP60N10 IXTP60N10TM

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET IXTA60N10T IXTP60N10T VDSS ID25 = 100V = 60A Ω ≤ 18mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM Transient


    Original
    PDF IXTA60N10T IXTP60N10T O-263 062in. 60N10T 7-08-A

    IXTP60N10T

    Abstract: IXTA60N10T IXTP60N10 60N10T 60n10
    Text: IXTA60N10T IXTP60N10T TrenchMVTM Power MOSFET VDSS ID25 = 100V = 60A Ω ≤ 18mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM Transient


    Original
    PDF IXTA60N10T IXTP60N10T O-263 062in. 60N10T 7-08-A IXTP60N10T IXTA60N10T IXTP60N10 60n10

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTP60N10TM = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original
    PDF IXTP60N10TM O-220 60N10T 7-08-A

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


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    PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T