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    50N28

    Abstract: IXTA50N28T
    Text: Preliminary Technical Information Trench Gate Power MOSFETs VDSS ID25 IXTA50N28T IXTP50N28T IXTQ50N28T RDS on = 280V = 50A Ω ≤ 66mΩ N-Channel Enhancement Mode For PDP Drivers TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTA50N28T IXTP50N28T IXTQ50N28T O-263 IXTA50N28T 50N28T 50N28

    50N28

    Abstract: 50N28T IXTA50N28T IXTQ50N28T
    Text: Preliminary Technical Information IXTA50N28T IXTP50N28T IXTQ50N28T Trench Gate Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode For PDP Drivers = 280V = 50A ≤ 66mΩ Ω TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTA50N28T IXTP50N28T IXTQ50N28T O-263 O-220AB O-220 O-220 50N28 50N28T IXTQ50N28T