Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTP22N50PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 8A Ω ≤ 270mΩ OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
|
Original
|
IXTP22N50PM
100ms
22N50P
7-22-09-B
|
PDF
|
22N50
Abstract: IXTP22N50PM 22N50P
Text: Preliminary Technical Information IXTP22N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 8A Ω ≤ 270mΩ OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
|
Original
|
IXTP22N50PM
100ms
22N50P
7-22-09-B
22N50
IXTP22N50PM
|
PDF
|
IXTP22N50PM
Abstract: 22N50 22N50P
Text: Advance Technical Information IXTP22N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 11A Ω ≤ 290mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions VDSS
|
Original
|
IXTP22N50PM
22N50P
1-09-A
IXTP22N50PM
22N50
|
PDF
|