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    IXTP1R4N100P Search Results

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    IXTP1R4N100P Price and Stock

    Littelfuse Inc IXTP1R4N100P

    MOSFET N-CH 1000V 1.4A TO220AB
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    DigiKey IXTP1R4N100P Tube 300
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    • 1000 $1.91753
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    Newark IXTP1R4N100P Bulk 300
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    • 100 $2.18
    • 1000 $1.71
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    IXYS Corporation IXTP1R4N100P

    MOSFETs 1.4 Amps 1000V 11 Rds
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    Mouser Electronics IXTP1R4N100P 300
    • 1 $2.99
    • 10 $2.63
    • 100 $2.23
    • 1000 $1.73
    • 10000 $1.65
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    Future Electronics IXTP1R4N100P Tube 24 Weeks 50
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    TTI IXTP1R4N100P Tube 300
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    TME IXTP1R4N100P 1
    • 1 $2.52
    • 10 $1.99
    • 100 $1.8
    • 1000 $1.67
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    IXYS Integrated Circuits Division IXTP1R4N100P

    MOSFET DIS.1.4A 1000V N-CH TO220 POLAR THT
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    Ozdisan Elektronik IXTP1R4N100P
    • 1 $2.54386
    • 10 $2.54386
    • 100 $2.3126
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    • 10000 $2.3126
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    IXTP1R4N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTP1R4N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 1.4A TO-220 Original PDF

    IXTP1R4N100P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P

    IXTP1R4N100P

    Abstract: 1R4N100P
    Text: PolarTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ 11Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P 3-08-A IXTP1R4N100P 1R4N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFETs VDSS ID25 IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P = 1000V = 1.4A Ω ≤ 11.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P O-252 1R4N100P 3-08-A

    Untitled

    Abstract: No abstract text available
    Text: IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P PolarTM Power MOSFETs VDSS ID25 = 1000V = 1.4A ≤ 11.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P O-252 O-263 O-220AB 1R4N100P 3-08-A

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250