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Littelfuse Inc IXTN30N100L MOSFET N-CH 1000V 30A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN30N100L	Tube	593		1	1 $64.82 10 $54.754 100 $54.754 1000 $54.754 10000 $54.754	Buy Now
Newark	IXTN30N100L	Bulk			300	1 - 10 - 100 $57.39 1000 $57.39 10000 $57.39	Buy Now
IXYS Corporation IXTN30N100L MOSFET Modules 30 Amps 1000V
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Mouser Electronics	IXTN30N100L		768			1 $68.14 10 $65.26 100 $60.74 1000 $60.74 10000 $60.74	Buy Now
Future Electronics	IXTN30N100L	Tube			300	1 - 10 $54.86 100 $53.54 1000 $53.54 10000 $53.54	Buy Now
TTI	IXTN30N100L	Tube			300	1 - 10 - 100 - 1000 $54.75 10000 $54.75	Buy Now
TME	IXTN30N100L				1	1 $93.84 10 $74.61 100 $74.61 1000 $74.61 10000 $74.61	Get Quote
IXYS Integrated Circuits Division IXTN30N100L MOSFET MOD.30A 1000V N-CH SOT227B LINEAR CHASSIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTN30N100L					1 $100.25782 10 $93.6989 100 $93.6989 1000 $93.6989 10000 $93.6989	Get Quote

IXTN30N100L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTN30N100L		IXYS	Power MOSFETs with Extended FBSOA		Original	PDF

IXTN30N100L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXTN30N100L Abstract: No abstract text available Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTN30N100L E153432 30N100L 5-07-A IXTN30N100L	PDF
30n100 Abstract: No abstract text available Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTN30N100L E153432 30N100L 11-27-12-B 30n100	PDF
Untitled Abstract: No abstract text available Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN30N100L = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTN30N100L E153432 30N100L 5-07-A	PDF
30n100 Abstract: IXTN30N100L 30n10 Text: Linear Power MOSFET IXTN30N100L With Extended FBSOA VDSS ID25 D = 1000 = 30 ≤ 0.45 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous	Original	IXTN30N100L OT-227 E153432 30N100L 5-07-A 30n100 IXTN30N100L 30n10	PDF
IXAN0068 Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability	Original	IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L	PDF