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    30N10 Search Results

    30N10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1602BI-72-30N-10.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT9365AC-1B2-30N106.250000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-4B2-30N100.000000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-4E2-30N106.250000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AI-1E2-30N106.250000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SF Impression Pixel

    30N10 Price and Stock

    Infineon Technologies AG ISC030N10NM6ATMA1

    TRENCH >=100V PG-TDSON-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISC030N10NM6ATMA1 Cut Tape 6,598 1
    • 1 $4.13
    • 10 $2.719
    • 100 $4.13
    • 1000 $1.4795
    • 10000 $1.4795
    		Buy Now
    Avnet Americas ISC030N10NM6ATMA1 Reel 5,000 12 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.34635
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    Mouser Electronics ISC030N10NM6ATMA1 1,123
    • 1 $3.6
    • 10 $2.69
    • 100 $1.92
    • 1000 $1.48
    • 10000 $1.47
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    Newark ISC030N10NM6ATMA1 Cut Tape 1,808 5
    • 1 $1.59
    • 10 $1.59
    • 100 $1.59
    • 1000 $1.59
    • 10000 $1.59
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    EBV Elektronik ISC030N10NM6ATMA1 13 Weeks 5,000
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    Micro Commercial Components MCB130N10YA-TP

    N-CHANNEL MOSFET, D2-PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCB130N10YA-TP Cut Tape 6,311 1
    • 1 $2.68
    • 10 $1.728
    • 100 $2.68
    • 1000 $2.68
    • 10000 $2.68
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    MCB130N10YA-TP Digi-Reel 6,311 1
    • 1 $2.68
    • 10 $1.728
    • 100 $2.68
    • 1000 $2.68
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    MCB130N10YA-TP Reel 5,600 800
    • 1 -
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    • 100 -
    • 1000 $0.7875
    • 10000 $0.7875
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    Infineon Technologies AG IPD130N10NF2SATMA1

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD130N10NF2SATMA1 Tube 1,967 1
    • 1 $1.61
    • 10 $1.018
    • 100 $1.61
    • 1000 $0.48979
    • 10000 $0.43197
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    Avnet Americas IPD130N10NF2SATMA1 Reel 2,000 12 Weeks 2,000
    • 1 -
    • 10 -
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    • 10000 $0.31018
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    Mouser Electronics IPD130N10NF2SATMA1 1,905
    • 1 $1.24
    • 10 $0.945
    • 100 $0.682
    • 1000 $0.483
    • 10000 $0.406
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    Newark IPD130N10NF2SATMA1 Cut Tape 1,900 1
    • 1 $1.2
    • 10 $1
    • 100 $0.797
    • 1000 $0.576
    • 10000 $0.576
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    EBV Elektronik IPD130N10NF2SATMA1 13 Weeks 2,000
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    STMicroelectronics STFI130N10F3

    MOSFET N-CH 100V 46A I2PAKFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STFI130N10F3 Tube 1,500 1
    • 1 $4.68
    • 10 $4.68
    • 100 $4.68
    • 1000 $2.42148
    • 10000 $2.42148
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    STMicroelectronics STP30N10F7

    MOSFET N-CH 100V 32A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP30N10F7 Tube 787 1
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $0.8452
    • 10000 $0.8452
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    STMicroelectronics STP30N10F7 1
    • 1 $1.73
    • 10 $1.56
    • 100 $1.25
    • 1000 $1.03
    • 10000 $1.03
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    Bristol Electronics STP30N10F7 44 2
    • 1 -
    • 10 $2.25
    • 100 $1.875
    • 1000 $1.875
    • 10000 $1.875
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    Find more 30N10 price and stock on Findchips.com

    30N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS on = 0.40 Ω Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr trr ≤ 300 ns Preliminary Data Sheet Symbol Test Conditions


    Original     		PDF 30N100Q2 247TM 065B1 728B1 123B1 728B1

    PLUS264

    Abstract: 30n100 IXTN 85 N 20 "SOT-227 B" dimensions
    Text: Power MOSFETs with IXTB 30N100L IXTN 30N100L Extended FBSOA VDSS = 1000 V ID25 = 30 A RDS on ≤ 0.45 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings IXTB IXTN PLUS264 (IXTB) V DSS TJ = 25°C to 150°C 1000 1000 V VDGR


    Original     		PDF 30N100L PLUS264 PLUS264 30n100 IXTN 85 N 20 "SOT-227 B" dimensions

    30N100Q2

    Abstract: 30n100 202tJ IXFK30N100Q2
    Text: HiPerFETTM Power MOSFETs IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS on = 0.40 Ω Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr trr ≤ 300 ns Preliminary Data Sheet Symbol Test Conditions


    Original     		PDF 30N100Q2 247TM 065B1 728B1 123B1 728B1 30N100Q2 30n100 202tJ IXFK30N100Q2

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    30n10

    Abstract: No abstract text available
    Text: Push Terminal 特長・Features TERMINALS 1. コイルスプリングの採用により軽動作で確実にリード線 をロックします。 2. 2P~8Pをシリーズ化しましたので各種用途に応じて使い わけが可能です。 3. リード線挿入穴を自動検査機対応としたものも取り揃え


    Original     		PDF LQV020001 LQV0220-0003 LQV0250LQR0210LQV04204P LQR0410LQR04106P LQR061002 LQV0820-2002 LQR081006 30n10

    Untitled

    Abstract: No abstract text available
    Text: 30N10F7 N-channel 100 V, 0.027 Ω typ., 8 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS 30N10F7 100 V RDS on max. ID PTOT 0.035 Ω 8A 4.8 W(1) 1 1. The value is rated according to Rthj-pcb.


    Original     		PDF STL30N10F7 STL30N10F7 DocID025424

    30n10

    Abstract: No abstract text available
    Text: プッシュターミナル 特長・Features 1. コイルスプリングの採用により軽動作で確実にリード線 をロックします。 2. 2P~8Pをシリーズ化しましたので各種用途に応じて使い わけが可能です。 3. リード線挿入穴を自動検査機対応としたものも取り揃え


    Original     		PDF LQV020001 LQV0220-0003 LQV0250LQR02103P LQR0310LQV04204P LQR0410LQR04105P LQR051 LQV0820-2002 LQR081006 30n10

    Untitled

    Abstract: No abstract text available
    Text: 30N10F7, 30N10F7 N-channel 100 V, 0.02 Ω typ., 32 A STripFET VII DeepGATE™ Power MOSFETs in DPAK and TO-220FP packages Datasheet − production data Features Order codes VDS RDS on max 100 V 0.024 Ω 30N10F7 TAB 30N10F7 ID PTOT 32 A 50 W


    Original     		PDF STD30N10F7, STF30N10F7 O-220FP STD30N10F7 O-220FP DocID025607

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B