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    IXTM6N90 Price and Stock

    IXYS Corporation IXTM6N90

    MOSFET N-CH TO-3
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    IXTM6N90 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTM6N90 IXYS 900V HiPerFET power MOSFET Original PDF
    IXTM6N90 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM6N90 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM6N90 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTM6N90A IXYS 900V HiPerFET power MOSFET Original PDF
    IXTM6N90A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM6N90A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM6N90A Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IXTM6N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    6N90

    Abstract: 6N90A
    Text: IPIXYS Standard Power MOSFET IXTH/IXTM 6N90 IXTH/IXTM 6N90A VDSS ^D25 DS on 900 V 900 V 6A 6A 1.8 Q 1.4 Í2 D N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V ¥ dss T j =25°C to150°C 900 V VDQR Tj = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 900


    OCR Scan     		PDF 6N90A to150 O-247 O-204 O-204 O-247 IXTM6N90 IXTMGN90A 6N90

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF

    IXTM6N90A

    Abstract: No abstract text available
    Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000


    OCR Scan     		PDF IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A