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    IXTA80N10T7 Price and Stock

    IXYS Corporation IXTA80N10T7

    MOSFET N-CH 100V 80A TO263-7
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    IXTA80N10T7 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTA80N10T7 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 80A TO-263-7 Original PDF

    IXTA80N10T7 Datasheets Context Search

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    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA80N10T7 RDS on = 100 V = 80 A Ω ≤ 14 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA80N10T7 80N10T

    TD S 505 T

    Abstract: 80N10T 80N10 t7850 IXTA80N10T7
    Text: Preliminary Technical Information IXTA80N10T7 TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 80 A Ω ≤ 14 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA80N10T7 80N10T TD S 505 T 80N10T 80N10 t7850 IXTA80N10T7

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T