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    IXTA76N075T Search Results

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    IXTA76N075T Price and Stock

    IXYS Corporation IXTA76N075T

    MOSFET N-CH 75V 76A TO263
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    IXTA76N075T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTA76N075T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 76A TO-263 Original PDF

    IXTA76N075T Datasheets Context Search

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    IXTP76N075T

    Abstract: 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07
    Text: Preliminary Technical Information IXTA76N075T IXTP76N075T TrenchMVTM Power MOSFET = = VDSS ID25 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA76N075T IXTP76N075T O-263 O-220) 76N075T IXTP76N075T 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07

    IXTP76N075

    Abstract: 76n075
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T VDSS ID25 = = 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA76N075T IXTP76N075T O-263 76N075T IXTP76N075 76n075

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T