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    IXTA10N60P Search Results

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    IXTA10N60P Price and Stock

    Littelfuse Inc IXTA10N60P

    MOSFET N-CH 600V 10A TO263
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    DigiKey IXTA10N60P Tube 300
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    Verical IXTA10N60P 50 50
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    • 100 $4.2716
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    Newark IXTA10N60P Bulk 300
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    Chip1Stop IXTA10N60P 50
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    IXYS Corporation IXTA10N60P

    MOSFETs 10.0 Amps 600 V 0.74 Ohm Rds
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    Mouser Electronics IXTA10N60P
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    Future Electronics IXTA10N60P Tube 24 Weeks 50
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    TTI IXTA10N60P Tube 300
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    IXYS Integrated Circuits Division IXTA10N60P

    MOSFET DIS.10A 600V N-CH TO263(D2PAK) POLAR SMT
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    Ozdisan Elektronik IXTA10N60P
    • 1 $4.39428
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    • 100 $3.9948
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    IXTA10N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTA10N60P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A D2-PAK Original PDF

    IXTA10N60P Datasheets Context Search

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    IXTA10N60P

    Abstract: IXTP10N60P 10N60P 10N60
    Text: IXTA10N60P IXTP10N60P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 10A Ω ≤ 740mΩ TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA10N60P IXTP10N60P O-263 10N60P 4-18-10-D IXTA10N60P IXTP10N60P 10N60P 10N60

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    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTA10N60P IXTP10N60P RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 10A Ω ≤ 740mΩ TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA10N60P IXTP10N60P O-263 10N60P 4-18-10-D